JPS58100423A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58100423A JPS58100423A JP57200958A JP20095882A JPS58100423A JP S58100423 A JPS58100423 A JP S58100423A JP 57200958 A JP57200958 A JP 57200958A JP 20095882 A JP20095882 A JP 20095882A JP S58100423 A JPS58100423 A JP S58100423A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- forming
- silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000011521 glass Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000005468 ion implantation Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 114
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 229910052814 silicon oxide Inorganic materials 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 42
- 239000010703 silicon Substances 0.000 description 42
- 239000000758 substrate Substances 0.000 description 29
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000011574 phosphorus Substances 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 238000002955 isolation Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- 206010011878 Deafness Diseases 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200958A JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200958A JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51114052A Division JPS6035818B2 (ja) | 1976-09-22 | 1976-09-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100423A true JPS58100423A (ja) | 1983-06-15 |
| JPS6229890B2 JPS6229890B2 (enrdf_load_stackoverflow) | 1987-06-29 |
Family
ID=16433132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57200958A Granted JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100423A (enrdf_load_stackoverflow) |
-
1982
- 1982-11-15 JP JP57200958A patent/JPS58100423A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229890B2 (enrdf_load_stackoverflow) | 1987-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3014012B2 (ja) | 半導体装置の製造方法 | |
| US4408387A (en) | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask | |
| JPH0828424B2 (ja) | 半導体装置およびその製造方法 | |
| JPS62179764A (ja) | 壁スペ−サを有するバイポ−ラ半導体装置の製造方法 | |
| JPS58100423A (ja) | 半導体装置の製造方法 | |
| JPH0239091B2 (enrdf_load_stackoverflow) | ||
| JP2856432B2 (ja) | 半導体装置 | |
| JP3116609B2 (ja) | 半導体装置の製造方法 | |
| JPS59107572A (ja) | 半導体装置の製造方法 | |
| JP2571449B2 (ja) | バイポーラｉｃの製造方法 | |
| JPS6229891B2 (enrdf_load_stackoverflow) | ||
| JPS5984543A (ja) | バイポ−ラ集積回路装置およびその製造方法 | |
| JPS5941851A (ja) | 半導体装置の製造方法 | |
| JPH0136709B2 (enrdf_load_stackoverflow) | ||
| JPS5879735A (ja) | 半導体集積回路 | |
| JPS59100521A (ja) | 半導体装置の製造方法 | |
| JPS5966168A (ja) | 半導体装置の製法 | |
| JPH0650740B2 (ja) | 半導体装置 | |
| JPH053210A (ja) | 半導体装置の製造方法 | |
| JPS59231833A (ja) | 半導体装置及びその製造法 | |
| JPH01189159A (ja) | 半導体集積回路装置の製造方法 | |
| JPS59198751A (ja) | 半導体集積回路の製造方法 | |
| JPS59161067A (ja) | バイポ−ラ型半導体装置の製造方法 | |
| JPH05315347A (ja) | バイポーラトランジスタの製造方法 | |
| JPH08298284A (ja) | 半導体装置の製造方法 |