JPS6229891B2 - - Google Patents
Info
- Publication number
- JPS6229891B2 JPS6229891B2 JP58161616A JP16161683A JPS6229891B2 JP S6229891 B2 JPS6229891 B2 JP S6229891B2 JP 58161616 A JP58161616 A JP 58161616A JP 16161683 A JP16161683 A JP 16161683A JP S6229891 B2 JPS6229891 B2 JP S6229891B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide
- junction
- semiconductor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161616A JPS5986238A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58161616A JPS5986238A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51114052A Division JPS6035818B2 (ja) | 1976-09-22 | 1976-09-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5986238A JPS5986238A (ja) | 1984-05-18 |
| JPS6229891B2 true JPS6229891B2 (enrdf_load_stackoverflow) | 1987-06-29 |
Family
ID=15738553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58161616A Granted JPS5986238A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986238A (enrdf_load_stackoverflow) |
-
1983
- 1983-09-02 JP JP58161616A patent/JPS5986238A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5986238A (ja) | 1984-05-18 |