JPS5795672A - Field effect transistor with high breaking frequency - Google Patents

Field effect transistor with high breaking frequency

Info

Publication number
JPS5795672A
JPS5795672A JP16335381A JP16335381A JPS5795672A JP S5795672 A JPS5795672 A JP S5795672A JP 16335381 A JP16335381 A JP 16335381A JP 16335381 A JP16335381 A JP 16335381A JP S5795672 A JPS5795672 A JP S5795672A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
high breaking
breaking frequency
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16335381A
Other languages
English (en)
Inventor
Rin Niyuien Toron
Dourajiyubodoufu Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5795672A publication Critical patent/JPS5795672A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP16335381A 1980-10-14 1981-10-13 Field effect transistor with high breaking frequency Pending JPS5795672A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8021942A FR2492167A1 (fr) 1980-10-14 1980-10-14 Transistor a effet de champ a frequence de coupure elevee

Publications (1)

Publication Number Publication Date
JPS5795672A true JPS5795672A (en) 1982-06-14

Family

ID=9246865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16335381A Pending JPS5795672A (en) 1980-10-14 1981-10-13 Field effect transistor with high breaking frequency

Country Status (5)

Country Link
EP (1) EP0050064B1 (ja)
JP (1) JPS5795672A (ja)
CA (1) CA1182930A (ja)
DE (1) DE3170300D1 (ja)
FR (1) FR2492167A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913376A (ja) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合を有する半導体薄膜
JPS60113475A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd 半導体装置
JPS61230381A (ja) * 1985-04-05 1986-10-14 Nec Corp 半導体装置
JPS61192128U (ja) * 1985-05-17 1986-11-29
JPS62145779A (ja) * 1985-12-19 1987-06-29 Sumitomo Electric Ind Ltd 電界効果トランジスタ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2537781B1 (fr) * 1982-12-14 1986-05-30 Thomson Csf Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons
JPS6052060A (ja) * 1983-08-31 1985-03-23 Masataka Inoue 電界効果トランジスタ
JPH07120790B2 (ja) * 1984-06-18 1995-12-20 株式会社日立製作所 半導体装置
GB2166286B (en) * 1984-10-26 1988-07-20 Stc Plc Photo-detectors
JPS61107758A (ja) * 1984-10-31 1986-05-26 Fujitsu Ltd ＧａＡｓ集積回路及びその製造方法
JPS6328072A (ja) 1986-07-21 1988-02-05 Sumitomo Electric Ind Ltd 電界効果トランジスタ
EP0264932A1 (en) * 1986-10-24 1988-04-27 Sumitomo Electric Industries Limited Field effect transistor
US4839702A (en) * 1987-11-20 1989-06-13 Bell Communications Research, Inc. Semiconductor device based on charge emission from a quantum well
JP2873583B2 (ja) * 1989-05-10 1999-03-24 富士通株式会社 高速半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
EP0033037B1 (en) * 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913376A (ja) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合を有する半導体薄膜
JPS60113475A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd 半導体装置
JPS6355225B2 (ja) * 1983-11-24 1988-11-01 Fujitsu Ltd
JPS61230381A (ja) * 1985-04-05 1986-10-14 Nec Corp 半導体装置
JPS61192128U (ja) * 1985-05-17 1986-11-29
JPH0216102Y2 (ja) * 1985-05-17 1990-05-01
JPS62145779A (ja) * 1985-12-19 1987-06-29 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPH0328066B2 (ja) * 1985-12-19 1991-04-17 Sumitomo Electric Industries

Also Published As

Publication number Publication date
EP0050064A3 (en) 1982-05-05
CA1182930A (en) 1985-02-19
EP0050064B1 (fr) 1985-05-02
DE3170300D1 (en) 1985-06-05
EP0050064A2 (fr) 1982-04-21
FR2492167B1 (ja) 1984-02-17
FR2492167A1 (fr) 1982-04-16

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