FR2537781B1 - Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons - Google Patents

Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons

Info

Publication number
FR2537781B1
FR2537781B1 FR8220968A FR8220968A FR2537781B1 FR 2537781 B1 FR2537781 B1 FR 2537781B1 FR 8220968 A FR8220968 A FR 8220968A FR 8220968 A FR8220968 A FR 8220968A FR 2537781 B1 FR2537781 B1 FR 2537781B1
Authority
FR
France
Prior art keywords
operating
field effect
effect transistor
electron gas
gas accumulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8220968A
Other languages
English (en)
Other versions
FR2537781A1 (fr
Inventor
Paul Jay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8220968A priority Critical patent/FR2537781B1/fr
Publication of FR2537781A1 publication Critical patent/FR2537781A1/fr
Application granted granted Critical
Publication of FR2537781B1 publication Critical patent/FR2537781B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR8220968A 1982-12-14 1982-12-14 Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons Expired FR2537781B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8220968A FR2537781B1 (fr) 1982-12-14 1982-12-14 Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8220968A FR2537781B1 (fr) 1982-12-14 1982-12-14 Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons

Publications (2)

Publication Number Publication Date
FR2537781A1 FR2537781A1 (fr) 1984-06-15
FR2537781B1 true FR2537781B1 (fr) 1986-05-30

Family

ID=9280094

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8220968A Expired FR2537781B1 (fr) 1982-12-14 1982-12-14 Transistor a effet de champ, fonctionnant en regime d'accumulation par gaz d'electrons

Country Status (1)

Country Link
FR (1) FR2537781B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555815B1 (fr) * 1983-11-25 1986-08-29 Thomson Csf Transistor de puissance a effet de champ, et procede de realisation de ce transistor
CN103531639B (zh) * 2013-10-22 2016-09-07 合肥京东方光电科技有限公司 薄膜晶体管及其制备方法、阵列基板、显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2492167A1 (fr) * 1980-10-14 1982-04-16 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
JPS57176772A (en) * 1981-04-23 1982-10-30 Fujitsu Ltd Semiconductor device and manufacture thereof
CA1179071A (fr) * 1981-06-17 1984-12-04 Tadashi Fukuzawa Dispositif semiconducteur

Also Published As

Publication number Publication date
FR2537781A1 (fr) 1984-06-15

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Legal Events

Date Code Title Description
ST Notification of lapse