JPS5795618A - Low pressure epitaxial growing device - Google Patents

Low pressure epitaxial growing device

Info

Publication number
JPS5795618A
JPS5795618A JP9013580A JP9013580A JPS5795618A JP S5795618 A JPS5795618 A JP S5795618A JP 9013580 A JP9013580 A JP 9013580A JP 9013580 A JP9013580 A JP 9013580A JP S5795618 A JPS5795618 A JP S5795618A
Authority
JP
Japan
Prior art keywords
tube
porous tube
reacting
wall
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9013580A
Other languages
English (en)
Inventor
Eiji Shibata
Yoshihide Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9013580A priority Critical patent/JPS5795618A/ja
Publication of JPS5795618A publication Critical patent/JPS5795618A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP9013580A 1980-07-02 1980-07-02 Low pressure epitaxial growing device Pending JPS5795618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9013580A JPS5795618A (en) 1980-07-02 1980-07-02 Low pressure epitaxial growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9013580A JPS5795618A (en) 1980-07-02 1980-07-02 Low pressure epitaxial growing device

Publications (1)

Publication Number Publication Date
JPS5795618A true JPS5795618A (en) 1982-06-14

Family

ID=13990058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9013580A Pending JPS5795618A (en) 1980-07-02 1980-07-02 Low pressure epitaxial growing device

Country Status (1)

Country Link
JP (1) JPS5795618A (ja)

Similar Documents

Publication Publication Date Title
JPS5795618A (en) Low pressure epitaxial growing device
JPS55110030A (en) Method for vapor growth
JPS6481311A (en) Vapor phase growth device
JPS57100720A (en) Manufacture of amorphous semiconductor film
JPS55113875A (en) Vacuum-sealing device and equipment
JPS57149726A (en) Manufacture of semiconductor device
JPS52111473A (en) Ribbon crystal growth method
JPS5556623A (en) Gaseous phase growing method
JPS5732650A (en) Semiconductor device
JPS55140233A (en) Chemical gaseous-phase growing device
JPS5277916A (en) Secondary air controller
JPS57121236A (en) Plasma processing and device thereof
JPS5493357A (en) Growing method of polycrystal silicon
JPS5595320A (en) Cvd device
JPS568814A (en) Epitaxial growth of silicon under reduced pressure
JPS6430234A (en) Apparatus for manufacturing semiconductor device
JPS537171A (en) Vapor phase growth apparatus
JPS5384458A (en) Vapor growth method
JPS57121235A (en) Plasma processing and device thereof
JPS5513988A (en) Apparatus for semiconductor vapor growth
JPS5216974A (en) Method of manufacturing air phase epitachisial growing layer of chemic al compound semiconductor
JPS56124230A (en) Impurity diffusion for semiconductor wafer
JPS6454723A (en) Vapor growth device
JPS54134082A (en) Belt silicon crystallizer
JPS55110031A (en) Method for vapor growth