JPS5556623A - Gaseous phase growing method - Google Patents
Gaseous phase growing methodInfo
- Publication number
- JPS5556623A JPS5556623A JP12925378A JP12925378A JPS5556623A JP S5556623 A JPS5556623 A JP S5556623A JP 12925378 A JP12925378 A JP 12925378A JP 12925378 A JP12925378 A JP 12925378A JP S5556623 A JPS5556623 A JP S5556623A
- Authority
- JP
- Japan
- Prior art keywords
- upper stream
- wafers
- stream side
- grown
- downstream side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To equalize grown film thickness over the whole region in a horizontal resistance heating furnace, by forming spacing among adjacent wafers so that it be narrowed at the upper stream side of gas and gradually be widened with advance to the downstream when erecting the substrate wafers, which must be grown, at intervals in the furnace.
CONSTITUTION: The uniformity of the dopping of impurities is first ensured by erecting a plural number of semiconductor substrate wafers in an equal temperature region in a horizontal resistance heating furnace. Spacing among each wafer is located so that it be narrowed at the upper stream side of a reaction gas flow and gradually be widened with advance to the dowmstream. Thus, gwown layers are produced in total wafers with the uniform velocity of growth because the velocity of growth does not lower due to the consumption of reaction gas at the downstream side. That is, a condition is brought which effect that grown films become thin at the upper stream side and become thick at the downstream side and effect that the films become thick at the upper stream side and become thin at the downstream side due to the consumption of raw gas are offset each other.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12925378A JPS5556623A (en) | 1978-10-20 | 1978-10-20 | Gaseous phase growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12925378A JPS5556623A (en) | 1978-10-20 | 1978-10-20 | Gaseous phase growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5556623A true JPS5556623A (en) | 1980-04-25 |
Family
ID=15004987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12925378A Pending JPS5556623A (en) | 1978-10-20 | 1978-10-20 | Gaseous phase growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5556623A (en) |
-
1978
- 1978-10-20 JP JP12925378A patent/JPS5556623A/en active Pending
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