JPS5556623A - Gaseous phase growing method - Google Patents

Gaseous phase growing method

Info

Publication number
JPS5556623A
JPS5556623A JP12925378A JP12925378A JPS5556623A JP S5556623 A JPS5556623 A JP S5556623A JP 12925378 A JP12925378 A JP 12925378A JP 12925378 A JP12925378 A JP 12925378A JP S5556623 A JPS5556623 A JP S5556623A
Authority
JP
Japan
Prior art keywords
upper stream
wafers
stream side
grown
downstream side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12925378A
Other languages
Japanese (ja)
Inventor
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12925378A priority Critical patent/JPS5556623A/en
Publication of JPS5556623A publication Critical patent/JPS5556623A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To equalize grown film thickness over the whole region in a horizontal resistance heating furnace, by forming spacing among adjacent wafers so that it be narrowed at the upper stream side of gas and gradually be widened with advance to the downstream when erecting the substrate wafers, which must be grown, at intervals in the furnace.
CONSTITUTION: The uniformity of the dopping of impurities is first ensured by erecting a plural number of semiconductor substrate wafers in an equal temperature region in a horizontal resistance heating furnace. Spacing among each wafer is located so that it be narrowed at the upper stream side of a reaction gas flow and gradually be widened with advance to the dowmstream. Thus, gwown layers are produced in total wafers with the uniform velocity of growth because the velocity of growth does not lower due to the consumption of reaction gas at the downstream side. That is, a condition is brought which effect that grown films become thin at the upper stream side and become thick at the downstream side and effect that the films become thick at the upper stream side and become thin at the downstream side due to the consumption of raw gas are offset each other.
COPYRIGHT: (C)1980,JPO&Japio
JP12925378A 1978-10-20 1978-10-20 Gaseous phase growing method Pending JPS5556623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12925378A JPS5556623A (en) 1978-10-20 1978-10-20 Gaseous phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12925378A JPS5556623A (en) 1978-10-20 1978-10-20 Gaseous phase growing method

Publications (1)

Publication Number Publication Date
JPS5556623A true JPS5556623A (en) 1980-04-25

Family

ID=15004987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12925378A Pending JPS5556623A (en) 1978-10-20 1978-10-20 Gaseous phase growing method

Country Status (1)

Country Link
JP (1) JPS5556623A (en)

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