JPS54134082A - Belt silicon crystallizer - Google Patents

Belt silicon crystallizer

Info

Publication number
JPS54134082A
JPS54134082A JP4174378A JP4174378A JPS54134082A JP S54134082 A JPS54134082 A JP S54134082A JP 4174378 A JP4174378 A JP 4174378A JP 4174378 A JP4174378 A JP 4174378A JP S54134082 A JPS54134082 A JP S54134082A
Authority
JP
Japan
Prior art keywords
dies
silicon
crystal
crystallizer
molten silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4174378A
Other languages
Japanese (ja)
Other versions
JPS5638556B2 (en
Inventor
Hiroshi Ito
Koji Nakagawa
Toshiro Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4174378A priority Critical patent/JPS54134082A/en
Publication of JPS54134082A publication Critical patent/JPS54134082A/en
Publication of JPS5638556B2 publication Critical patent/JPS5638556B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: In a silicon crystallizer having slitted dies immersed in molten silicon, gas blow openings are placed near the upper portion of the dies to control the temperature distribution thereabout, thereby to produce a specified width and thickness belt type crystal in a high yield.
CONSTITUTION: Slitted dies 23a, 23b are immersed into molten silicon which lifts through the slit by capillary action. The lifted molten silicon is contacted with seed crystal and lifted to be grown into a belt type silicon crystal. The gas admission pipes 27a, 27b are provided near the top of the dies in parallel with growing crystal. The flow direction and quantity of the gas is adjusted so that the temperature distribution at the top of the dies are maintained at a specified condiditon.
COPYRIGHT: (C)1979,JPO&Japio
JP4174378A 1978-04-11 1978-04-11 Belt silicon crystallizer Granted JPS54134082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4174378A JPS54134082A (en) 1978-04-11 1978-04-11 Belt silicon crystallizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4174378A JPS54134082A (en) 1978-04-11 1978-04-11 Belt silicon crystallizer

Publications (2)

Publication Number Publication Date
JPS54134082A true JPS54134082A (en) 1979-10-18
JPS5638556B2 JPS5638556B2 (en) 1981-09-07

Family

ID=12616897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4174378A Granted JPS54134082A (en) 1978-04-11 1978-04-11 Belt silicon crystallizer

Country Status (1)

Country Link
JP (1) JPS54134082A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone

Also Published As

Publication number Publication date
JPS5638556B2 (en) 1981-09-07

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