JPS579031A - Manufacture of oxide cathode - Google Patents

Manufacture of oxide cathode

Info

Publication number
JPS579031A
JPS579031A JP8163280A JP8163280A JPS579031A JP S579031 A JPS579031 A JP S579031A JP 8163280 A JP8163280 A JP 8163280A JP 8163280 A JP8163280 A JP 8163280A JP S579031 A JPS579031 A JP S579031A
Authority
JP
Japan
Prior art keywords
base metal
reducing agent
atmosphere
adhere
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8163280A
Other languages
Japanese (ja)
Other versions
JPH0139618B2 (en
Inventor
Kanji Kataue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8163280A priority Critical patent/JPS579031A/en
Publication of JPS579031A publication Critical patent/JPS579031A/en
Publication of JPH0139618B2 publication Critical patent/JPH0139618B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid Thermionic Cathode (AREA)

Abstract

PURPOSE:To maintain stable electron radioactivity of a base metal made of Ni containing a reducing agent for a long time, by treating the base metal at a high temperature in an atmosphere in which the reducing agent is hardly oxidized to make Ni crystal grains with a diameter of over a given value to be grown, before the base metal is heated in a wet atmosphere of hydrogen to make an oxide to adhere to the base metal. CONSTITUTION:A base metal made of Ni containing a reducing agent chosen out of Si, Mg, Al, Zr and W is heated at 100 deg.C for about 1hr in an atmosphere in which the reducing agent is hardly oxidized, for example, in vacuum at a pressure of below 10<-7> torr, thereby Ni crystal grains with a diameter of over 30m being grown. After that, the base metel is subjected to a decarburization treatment carried out, for example, at 950 deg.C in a wet atmosphere of hydrogen the dew point of which is 20 deg.C for 1hr, thereby an oxide working as an electron radiation source being made to adhere to the base metal. By the means mentioned above, any intermediate layer is hardly developed, and the electron radioactivity can be maintained for a long time.
JP8163280A 1980-06-17 1980-06-17 Manufacture of oxide cathode Granted JPS579031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8163280A JPS579031A (en) 1980-06-17 1980-06-17 Manufacture of oxide cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8163280A JPS579031A (en) 1980-06-17 1980-06-17 Manufacture of oxide cathode

Publications (2)

Publication Number Publication Date
JPS579031A true JPS579031A (en) 1982-01-18
JPH0139618B2 JPH0139618B2 (en) 1989-08-22

Family

ID=13751702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8163280A Granted JPS579031A (en) 1980-06-17 1980-06-17 Manufacture of oxide cathode

Country Status (1)

Country Link
JP (1) JPS579031A (en)

Also Published As

Publication number Publication date
JPH0139618B2 (en) 1989-08-22

Similar Documents

Publication Publication Date Title
GB1101563A (en) Process for producing semi-conductor behavior in diamonds
JPS579031A (en) Manufacture of oxide cathode
JPS524162A (en) Electric field radiation cathode and its manufacturing method
JPS57115823A (en) Manufacture of amorphous semiconductor film
JPS54134964A (en) Manufacture of carbide field emitter
JPS5315273A (en) Forming method for transparent thin film of oxide
JPS6472533A (en) Manufacture of single crystal semiconductor substrate
JPS5732537A (en) Manufacture of oxide cathode
JPS56155528A (en) Method of diffusing impurity into semiconductor substrate
JPS5216989A (en) Process of semiconductor thin film
JPS5574108A (en) Power source transformer core
JPS5230211A (en) Method of manufacturing high purity cr- fe alloy
JPS57136751A (en) Manufacture of rotating anode for x-ray tube
JPS61124561A (en) Manufacture of compound thin film
JPS5440073A (en) Film forming method
GB1177302A (en) Improvements in or relating to Grid Electrodes
JPS57103316A (en) Manufacture of compound semiconductor device
JPS579044A (en) Electrode for discharge lamp
JPS5521836A (en) Method of manufacturing cathode structure
JPS57145249A (en) Electron tube cathode
JPS5478664A (en) Forming method for insulating film
JPS55110782A (en) Method for surface treatment of material to be worked by cold plastic working
JPS57109325A (en) Manufacture of amorphous silicon film
JPS5481080A (en) Manufacture of semiconductor device
GB944937A (en) Improvements in production of magnetic materials