JPS5788769A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5788769A JPS5788769A JP16455180A JP16455180A JPS5788769A JP S5788769 A JPS5788769 A JP S5788769A JP 16455180 A JP16455180 A JP 16455180A JP 16455180 A JP16455180 A JP 16455180A JP S5788769 A JPS5788769 A JP S5788769A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- collector
- emitter
- hfe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16455180A JPS5788769A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16455180A JPS5788769A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5788769A true JPS5788769A (en) | 1982-06-02 |
Family
ID=15795300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16455180A Pending JPS5788769A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5788769A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376373A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 横形トランジスタ |
| US4897705A (en) * | 1986-05-06 | 1990-01-30 | Mitsubishi Denki Kabushiki Kaisha | Lateral bipolar transistor for logic circuit |
| US5596220A (en) * | 1985-12-31 | 1997-01-21 | U.S. Philips Corporation | Integrated lateral transistor with improved current amplification |
-
1980
- 1980-11-25 JP JP16455180A patent/JPS5788769A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5596220A (en) * | 1985-12-31 | 1997-01-21 | U.S. Philips Corporation | Integrated lateral transistor with improved current amplification |
| US4897705A (en) * | 1986-05-06 | 1990-01-30 | Mitsubishi Denki Kabushiki Kaisha | Lateral bipolar transistor for logic circuit |
| JPS6376373A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 横形トランジスタ |
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