JPS5787184A - Gan blue light emitting element - Google Patents

Gan blue light emitting element

Info

Publication number
JPS5787184A
JPS5787184A JP16374680A JP16374680A JPS5787184A JP S5787184 A JPS5787184 A JP S5787184A JP 16374680 A JP16374680 A JP 16374680A JP 16374680 A JP16374680 A JP 16374680A JP S5787184 A JPS5787184 A JP S5787184A
Authority
JP
Japan
Prior art keywords
layer
doped
zinc
gan
gan layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16374680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6134276B2 (enrdf_load_stackoverflow
Inventor
Kazuo Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP16374680A priority Critical patent/JPS5787184A/ja
Publication of JPS5787184A publication Critical patent/JPS5787184A/ja
Publication of JPS6134276B2 publication Critical patent/JPS6134276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
JP16374680A 1980-11-19 1980-11-19 Gan blue light emitting element Granted JPS5787184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16374680A JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374680A JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Publications (2)

Publication Number Publication Date
JPS5787184A true JPS5787184A (en) 1982-05-31
JPS6134276B2 JPS6134276B2 (enrdf_load_stackoverflow) 1986-08-06

Family

ID=15779890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374680A Granted JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Country Status (1)

Country Link
JP (1) JPS5787184A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
KR20030001566A (ko) * 2001-06-25 2003-01-08 대한민국 (한밭대학총장) 질화갈륨 분말 제조장치와 그 제조방법 및 그를 이용한전기발광소자
US6692237B1 (en) 1999-06-18 2004-02-17 Kabushiki Kaisha Sankyo Seiki Seisakusho Rotary piston cylinder device with radially extending cylinder chambers intersecting at a rotary axis
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
US6692237B1 (en) 1999-06-18 2004-02-17 Kabushiki Kaisha Sankyo Seiki Seisakusho Rotary piston cylinder device with radially extending cylinder chambers intersecting at a rotary axis
KR20030001566A (ko) * 2001-06-25 2003-01-08 대한민국 (한밭대학총장) 질화갈륨 분말 제조장치와 그 제조방법 및 그를 이용한전기발광소자

Also Published As

Publication number Publication date
JPS6134276B2 (enrdf_load_stackoverflow) 1986-08-06

Similar Documents

Publication Publication Date Title
US4080245A (en) Process for manufacturing a gallium phosphide electroluminescent device
DE69315832D1 (de) Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner Herstellung
GB2106419A (en) Growth of structures based on group iv semiconductor materials
JPS5787184A (en) Gan blue light emitting element
JPS57130490A (en) Semiconductor laser device
JPH08306643A (ja) ３−５族化合物半導体用電極および発光素子
JPS5730385A (en) Semiconductor light emitting element
CA2088800A1 (en) Method for manufacturing semiconductor light-receiving elements
JPS57199277A (en) Semiconductor luminous elements and manufacture thereof
JPS57166078A (en) Semiconductor device
JPS5660076A (en) Gallium nitride light emitting element and manufacture thereof
JPS57204115A (en) Manufacture of semiconductor device
JPS57136385A (en) Manufacture of semiconductor laser
JPS6490518A (en) Formation of gaas epitaxial layer
JPS5717167A (en) Mesa type semiconductor device
JPS56114367A (en) Semiconductor device
JPS648612A (en) Compound semiconductor device
JPS5772373A (en) Semiconductor device
JPS5931972B2 (ja) 液相エピタキシヤル成長法
JPS57166088A (en) Electrode of luminus diode
JPS647684A (en) Manufacture of solid-state laser
JPS57206060A (en) Manufacturing method for semiconductor device
JPS5658288A (en) Semiconductor device
JP2001094148A (ja) サファイア基板青色光ｌｅｄとその製造方法
JPS5721834A (en) Semiconductor substrate