JPS647684A - Manufacture of solid-state laser - Google Patents
Manufacture of solid-state laserInfo
- Publication number
- JPS647684A JPS647684A JP16347487A JP16347487A JPS647684A JP S647684 A JPS647684 A JP S647684A JP 16347487 A JP16347487 A JP 16347487A JP 16347487 A JP16347487 A JP 16347487A JP S647684 A JPS647684 A JP S647684A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystal
- luminous layer
- electrode
- state laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To manufacture a solid state laser with high luminous efficiency and reliability by employing the steps of forming a thin single-crystal layer as a light-emitting layer on a single-crystal substrate, depositing an insulating layer and then a first electrode on the light-emitting layer, etching and depositing an insulating film and then a second electrode on the etched and exposed portions of the light-emitting layer. CONSTITUTION:Electrodes 14 and 17 are formed through insulating films 13 and 16 onto opposite faces of a luminous layer 12 which a luminescence center impurity is doped in the luminescent base metal. At the same time, a solid-state laser is manufactured with other two faces treated as reflecting surfaces 18a and 18b. In such cases, a thin single-crystal film is formed as the luminous layer 12 onto a single-crystal substrate 11 through the epitaxial growth method. Next, the single-crystal substrate 11 is etched from its reverse side to expose the luminous layer 12. The second electrode 17 is formed through the insulating film on the reverse side of the exposed luminous layer 12. For example, the luminous layer 12 is composed by the thin single-crystal film which terbium as the luminescence center impurity is doped in zinc sulphide as the luminescent base metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163474A JP2524595B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing solid laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163474A JP2524595B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing solid laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS647684A true JPS647684A (en) | 1989-01-11 |
JP2524595B2 JP2524595B2 (en) | 1996-08-14 |
Family
ID=15774560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62163474A Expired - Lifetime JP2524595B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing solid laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2524595B2 (en) |
-
1987
- 1987-06-30 JP JP62163474A patent/JP2524595B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2524595B2 (en) | 1996-08-14 |
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