JPS5785253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5785253A
JPS5785253A JP55161683A JP16168380A JPS5785253A JP S5785253 A JPS5785253 A JP S5785253A JP 55161683 A JP55161683 A JP 55161683A JP 16168380 A JP16168380 A JP 16168380A JP S5785253 A JPS5785253 A JP S5785253A
Authority
JP
Japan
Prior art keywords
substrate voltage
circuit
output
reaches
fetq13
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55161683A
Other languages
Japanese (ja)
Other versions
JPS6331942B2 (en
Inventor
Taira Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55161683A priority Critical patent/JPS5785253A/en
Publication of JPS5785253A publication Critical patent/JPS5785253A/en
Publication of JPS6331942B2 publication Critical patent/JPS6331942B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To decrease the mean power consumption of a substrate voltage generating circuit by stopping the action of the substrate voltage generating circuit when substrate voltage reaches set value and re-operating the circuit in response to the change of substrate voltage. CONSTITUTION:The inverters at the odd stages of an oscillation circuit 1 are arranged in ringed shapes and one ends are connected in common, and the common connecting termials are connected to ground through an enhancement type IGFETQ13 to which control signals A are given from a substrate voltage detecting circuit 11. The substrate voltage detecting circuit 11 detects the substrate voltage, and interrupts the FETQ13 by the control signals A when the absolute value of the detecting value reaches the absolute value or higher of set voltage. The output B of the oscillation circuit 1 reaches a high level through the interruption of the FETQ13. An inverter 12 mounted between the output B and a gate of a FETQ2 of an ampilfication circuit 2 inverts the output B at a high level, and turns FETQ2, Q4 off.
JP55161683A 1980-11-17 1980-11-17 Semiconductor device Granted JPS5785253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55161683A JPS5785253A (en) 1980-11-17 1980-11-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55161683A JPS5785253A (en) 1980-11-17 1980-11-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5785253A true JPS5785253A (en) 1982-05-27
JPS6331942B2 JPS6331942B2 (en) 1988-06-27

Family

ID=15739855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55161683A Granted JPS5785253A (en) 1980-11-17 1980-11-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5785253A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146488A (en) * 1985-12-20 1987-06-30 Mitsubishi Electric Corp Internal potential generating circuit
US4820936A (en) * 1987-05-29 1989-04-11 U.S. Philips Corp. Integrated CMOS circuit comprising a substrate bias voltage generator
JPH0229992A (en) * 1983-07-08 1990-01-31 Texas Instr Inc <Ti> Dynamic ram substrate bias generator
JPH02156499A (en) * 1988-12-08 1990-06-15 Mitsubishi Electric Corp Substrate bias potential generation circuit for semiconductor integrated circuit device
JPH04263194A (en) * 1991-05-29 1992-09-18 Hitachi Ltd Semiconductor device
JPH05266661A (en) * 1991-12-23 1993-10-15 Samsung Electron Co Ltd Voltage generating circuit generating substrate voltage and boosting voltage
JPH06303765A (en) * 1992-10-22 1994-10-28 Nittetsu Semiconductor Kk Generator and control method for substrate bias used by integrated circuit
JP2009294978A (en) * 2008-06-06 2009-12-17 Asahi Kasei Toko Power Device Corp Reference voltage circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0381160A (en) * 1989-08-24 1991-04-05 Juki Corp Abnormality detecting device of magnetic coil for driving movable body

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0229992A (en) * 1983-07-08 1990-01-31 Texas Instr Inc <Ti> Dynamic ram substrate bias generator
JPS62146488A (en) * 1985-12-20 1987-06-30 Mitsubishi Electric Corp Internal potential generating circuit
JPH0750552B2 (en) * 1985-12-20 1995-05-31 三菱電機株式会社 Internal potential generation circuit
US4820936A (en) * 1987-05-29 1989-04-11 U.S. Philips Corp. Integrated CMOS circuit comprising a substrate bias voltage generator
JPH02156499A (en) * 1988-12-08 1990-06-15 Mitsubishi Electric Corp Substrate bias potential generation circuit for semiconductor integrated circuit device
JPH04263194A (en) * 1991-05-29 1992-09-18 Hitachi Ltd Semiconductor device
JPH05266661A (en) * 1991-12-23 1993-10-15 Samsung Electron Co Ltd Voltage generating circuit generating substrate voltage and boosting voltage
JPH06303765A (en) * 1992-10-22 1994-10-28 Nittetsu Semiconductor Kk Generator and control method for substrate bias used by integrated circuit
JP2009294978A (en) * 2008-06-06 2009-12-17 Asahi Kasei Toko Power Device Corp Reference voltage circuit

Also Published As

Publication number Publication date
JPS6331942B2 (en) 1988-06-27

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