JPS5784181A - Formation of sealed chamber of semiconductor pressure sensor - Google Patents

Formation of sealed chamber of semiconductor pressure sensor

Info

Publication number
JPS5784181A
JPS5784181A JP55161105A JP16110580A JPS5784181A JP S5784181 A JPS5784181 A JP S5784181A JP 55161105 A JP55161105 A JP 55161105A JP 16110580 A JP16110580 A JP 16110580A JP S5784181 A JPS5784181 A JP S5784181A
Authority
JP
Japan
Prior art keywords
glass
wafers
piled
wafer
diaphragms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55161105A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222537B2 (enrdf_load_stackoverflow
Inventor
Katsuhiro Ono
Yoichiro Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55161105A priority Critical patent/JPS5784181A/ja
Publication of JPS5784181A publication Critical patent/JPS5784181A/ja
Publication of JPS6222537B2 publication Critical patent/JPS6222537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP55161105A 1980-11-14 1980-11-14 Formation of sealed chamber of semiconductor pressure sensor Granted JPS5784181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55161105A JPS5784181A (en) 1980-11-14 1980-11-14 Formation of sealed chamber of semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55161105A JPS5784181A (en) 1980-11-14 1980-11-14 Formation of sealed chamber of semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS5784181A true JPS5784181A (en) 1982-05-26
JPS6222537B2 JPS6222537B2 (enrdf_load_stackoverflow) 1987-05-19

Family

ID=15728694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55161105A Granted JPS5784181A (en) 1980-11-14 1980-11-14 Formation of sealed chamber of semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS5784181A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07185245A (ja) * 1993-12-24 1995-07-25 Fukuhara:Kk コンプレッサーに於ける除臭除菌装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519864A (en) * 1978-07-28 1980-02-12 Hitachi Ltd Semiconductor distortion gauge type pressure sensor and manufacture thereof
JPS5544717A (en) * 1978-09-25 1980-03-29 Hitachi Ltd Manufacturing semiconductor strain-gage type pressure sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519864A (en) * 1978-07-28 1980-02-12 Hitachi Ltd Semiconductor distortion gauge type pressure sensor and manufacture thereof
JPS5544717A (en) * 1978-09-25 1980-03-29 Hitachi Ltd Manufacturing semiconductor strain-gage type pressure sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07185245A (ja) * 1993-12-24 1995-07-25 Fukuhara:Kk コンプレッサーに於ける除臭除菌装置

Also Published As

Publication number Publication date
JPS6222537B2 (enrdf_load_stackoverflow) 1987-05-19

Similar Documents

Publication Publication Date Title
US4405970A (en) Silicon-glass-silicon capacitive pressure transducer
IE822452L (en) Capactive pressure transducer
GB2168160A (en) Silicon capacitive pressure sensor
JP3428729B2 (ja) 容量式圧力変換器
US3848329A (en) Method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer
JPS5784181A (en) Formation of sealed chamber of semiconductor pressure sensor
JPS54132675A (en) Overlaying method
JPH07320996A (ja) 静電接合方法及び静電接合用治具
JP2569946B2 (ja) 陽極接合方法
US3475663A (en) High voltage glass sealed semiconductor device
JPS5749276A (en) Manufacture of semiconductor pressure sensor
JPH02141442A (ja) シリコンウエハとガラス基板の陽極接合法
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS5522838A (en) Manufacturing method of semiconductor strain gauge type pressure senser chip
JPS56133877A (en) Semiconductor diaphragm type sensor
JPS5522818A (en) Method of semiconductor pressure sensor chip
JPS6226845A (ja) Lcc型半導体装置
JPS56148870A (en) Semiconductor presssure converter
JPS5651830A (en) Glassivating method for bevel-type semiconductor element
JPS51121262A (en) Method of manufacturing semiconductor devices
JPS56137664A (en) Lead frame and semiconductor device having lead frame
JPS57117274A (en) Photo sensor array device
JPS5544717A (en) Manufacturing semiconductor strain-gage type pressure sensor
GB1258870A (enrdf_load_stackoverflow)
JPS5779680A (en) Manufacture of silicon avalanche photodiode