JPS5519864A - Semiconductor distortion gauge type pressure sensor and manufacture thereof - Google Patents

Semiconductor distortion gauge type pressure sensor and manufacture thereof

Info

Publication number
JPS5519864A
JPS5519864A JP9288778A JP9288778A JPS5519864A JP S5519864 A JPS5519864 A JP S5519864A JP 9288778 A JP9288778 A JP 9288778A JP 9288778 A JP9288778 A JP 9288778A JP S5519864 A JPS5519864 A JP S5519864A
Authority
JP
Japan
Prior art keywords
pellet
pressure sensor
type pressure
semiconductor distortion
gauge type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9288778A
Other languages
Japanese (ja)
Inventor
Kiyomitsu Suzuki
Kazuji Yamada
Motohisa Nishihara
Hiroji Kawakami
Satoshi Shimada
Shigeyuki Kobori
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9288778A priority Critical patent/JPS5519864A/en
Publication of JPS5519864A publication Critical patent/JPS5519864A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: For obtaining highly reliable semiconductor distortion gauge type pressure sensors with completely hermetic adhesions, to adhere a pellet provided with a pressure sensing diaphragm t he column-shaped member having a thermal expansion coefficient almost equal to that of said pellet and to make holding thereof in a closed container.
CONSTITUTION: The semiconductor mono-crystalline pellet 32 having a pressure sensing diaphragn 31 is adhered to the column-shaped member 34 having the a heat expansion coefficient almost equal to that of said pellet 32 and a hole 33 at the center thereof. Next, the pressure sensor portion 3 made by depositing the layers of the metals 35 and 36 having a large strength of bonding with said member 34 and the metal 37 having an affinity for solder on the other end portion of said member 34 is sticked by to solder to the stem 1 on which a plurality of lead wires 11 are sealed hermetically. Next, the electrode 38 of said pellet 32 and lead wires 11 are interconnected by wires 18, said stem 1 and cap 2 are sticked to each other, and space 4 is kept vacuum. Consequently, a completely-hermetic, highly-reliable semiconductor distortion guage type pressure sensor with solid adhesions can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP9288778A 1978-07-28 1978-07-28 Semiconductor distortion gauge type pressure sensor and manufacture thereof Pending JPS5519864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9288778A JPS5519864A (en) 1978-07-28 1978-07-28 Semiconductor distortion gauge type pressure sensor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9288778A JPS5519864A (en) 1978-07-28 1978-07-28 Semiconductor distortion gauge type pressure sensor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5519864A true JPS5519864A (en) 1980-02-12

Family

ID=14066959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9288778A Pending JPS5519864A (en) 1978-07-28 1978-07-28 Semiconductor distortion gauge type pressure sensor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5519864A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749276A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Manufacture of semiconductor pressure sensor
JPS5784181A (en) * 1980-11-14 1982-05-26 Mitsubishi Electric Corp Formation of sealed chamber of semiconductor pressure sensor
JPS59140593A (en) * 1983-01-31 1984-08-11 富士通株式会社 Sheet paper storage mechanism
JPS60253280A (en) * 1984-05-29 1985-12-13 Omron Tateisi Electronics Co Semiconductor pressure sensor
US5289964A (en) * 1990-01-23 1994-03-01 Nippondenso Co., Ltd. Fluxless soldering process
JPH06125096A (en) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp Semiconductor pressure sensor
US5986316A (en) * 1997-11-26 1999-11-16 Denso Corporation Semiconductor type physical quantity sensor
CN110967046A (en) * 2018-09-28 2020-04-07 横河电机株式会社 Sensor unit, transmitter provided with sensor unit, method for manufacturing sensor unit, and method for manufacturing transmitter

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749276A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Manufacture of semiconductor pressure sensor
JPS5784181A (en) * 1980-11-14 1982-05-26 Mitsubishi Electric Corp Formation of sealed chamber of semiconductor pressure sensor
JPS6222537B2 (en) * 1980-11-14 1987-05-19 Mitsubishi Electric Corp
JPS59140593A (en) * 1983-01-31 1984-08-11 富士通株式会社 Sheet paper storage mechanism
JPS60253280A (en) * 1984-05-29 1985-12-13 Omron Tateisi Electronics Co Semiconductor pressure sensor
US5289964A (en) * 1990-01-23 1994-03-01 Nippondenso Co., Ltd. Fluxless soldering process
JPH06125096A (en) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp Semiconductor pressure sensor
US5986316A (en) * 1997-11-26 1999-11-16 Denso Corporation Semiconductor type physical quantity sensor
CN110967046A (en) * 2018-09-28 2020-04-07 横河电机株式会社 Sensor unit, transmitter provided with sensor unit, method for manufacturing sensor unit, and method for manufacturing transmitter

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