JPS60253280A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS60253280A JPS60253280A JP11056284A JP11056284A JPS60253280A JP S60253280 A JPS60253280 A JP S60253280A JP 11056284 A JP11056284 A JP 11056284A JP 11056284 A JP11056284 A JP 11056284A JP S60253280 A JPS60253280 A JP S60253280A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- base
- semiconductor pressure
- sensor chip
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 125000006850 spacer group Chemical group 0.000 claims abstract description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 239000011733 molybdenum Substances 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052845 zircon Inorganic materials 0.000 claims description 9
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 238000002844 melting Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【発明の詳細な説明】
発明の分野
本発明は空気や水等の流体の圧力を検出し圧力に対応し
た電気信号を出力するダイヤフラム型半導体圧力センサ
のチップの実装構造に特徴を有する半導体圧力センサに
関するものである。Detailed Description of the Invention Field of the Invention The present invention relates to a semiconductor pressure sensor characterized by a chip mounting structure of a diaphragm type semiconductor pressure sensor that detects the pressure of a fluid such as air or water and outputs an electrical signal corresponding to the pressure. It is related to.
従来技術とその問題点
従来のダイヤフラム型圧力センサは例えば第２図（ａｌ
、 （ｂｌに示すように、中央にダイヤフラム部を有す
る圧力センサチップ１を基台２上に低融点ガラス３等の
接着剤を介して接続する。そしてこの基台２の底部にに
メタライズ層４を介して圧力導入パイプ５を接続する。Prior art and its problems A conventional diaphragm pressure sensor is shown in FIG. 2 (al.
(As shown in BL, a pressure sensor chip 1 having a diaphragm portion in the center is connected to a base 2 via an adhesive such as low melting point glass 3. Then, a metallized layer 4 is placed on the bottom of this base 2. A pressure introduction pipe 5 is connected through the pressure introduction pipe 5.
圧力導入パイプ５は中央を貫通し基台２の貫通孔２ａを
通って半導体圧力センサチップ１の下面につながる圧力
導入孔６を有している。そして基台２の上面の左右の端
部には第２図（ａ）に示すようにリードフレーム７が設
けられ、圧力センサチソプ１の電極とリードフレーム７
につながるパターン間を金ワイヤ８によって接続してい
る。The pressure introduction pipe 5 has a pressure introduction hole 6 that passes through the center and connects to the lower surface of the semiconductor pressure sensor chip 1 through the through hole 2a of the base 2. As shown in FIG. 2(a), a lead frame 7 is provided at the left and right ends of the upper surface of the base 2, and the electrode of the pressure sensor 1 and the lead frame 7 are provided.
A gold wire 8 connects the patterns connected to each other.
ここで基台２は半導体圧力センサチップ１とほぼ同一の
熱膨張係数を有する必要がある。これは基台２の中央上
面に低融点ガラス３を印刷し加熱することによってその
上部に半導体圧力センサチソプ１を接続しているが、接
続の際に両者の熱膨張係数が異なれば熱ストレスにより
接着剤となる低融点ガラス３が充分接着できなかったり
、接着後に温度の変動によって低融点ガラス３にクラッ
クを生じリークの不良を生じることがあり、又圧力セン
サの電気的な温度特性を悪化させる恐れがあるからであ
る。そのため従来は基台２としてシリコンの圧力センサ
チップの熱膨張係数に近似しているジルコンセラミック
を用いていた。しかしながらジルコンセラミック曲げ強
度は例えばアルミナセラミック等のｚ程度であって、リ
ードフレーム７や圧力導入パイプ５に応力が加わったと
きにリードフレーム７や圧力導入パイプ５の接続部の基
台２が容易に破壊してしまうという問題点があった。Here, the base 2 needs to have substantially the same coefficient of thermal expansion as the semiconductor pressure sensor chip 1. This is done by printing a low-melting point glass 3 on the upper center surface of the base 2 and then heating it to connect the semiconductor pressure sensor 1 to the top. However, if the thermal expansion coefficients of the two are different during connection, they will bond due to thermal stress. The low melting point glass 3 that serves as the agent may not be able to bond sufficiently, or the low melting point glass 3 may crack due to temperature fluctuations after bonding, resulting in leakage defects, and there is a risk that the electrical temperature characteristics of the pressure sensor may deteriorate. This is because there is. Therefore, conventionally, zircon ceramic, which has a coefficient of thermal expansion close to that of a silicon pressure sensor chip, has been used as the base 2. However, the bending strength of zircon ceramics is about the same as that of alumina ceramics, for example, and when stress is applied to the lead frame 7 or the pressure introduction pipe 5, the base 2 of the connection part of the lead frame 7 or the pressure introduction pipe 5 easily breaks. There was a problem with it being destroyed.
発明の目的
本発明はこのような従来の半導体圧力センサの問題点に
鑑みてなされたものであって、リードフレームや圧力導
入パイプに応力が加わっても容易に破壊することがない
基台を持った半導体圧力センサを提供することを目的と
する。Purpose of the Invention The present invention has been made in view of the problems of conventional semiconductor pressure sensors, and has a base that does not easily break even if stress is applied to the lead frame or pressure introduction pipe. The purpose of the present invention is to provide a semiconductor pressure sensor with a high level of performance.
発明の構成と効果
本発明は基台の上面に半導体圧力センサチップを配置し
、該基台の下面に圧力導入パイプを設け、半導体圧力セ
ンサチップに導かれる圧力を検知する半導体圧力センサ
であって、基台をアルミナセラミックにより形成し、基
台の上面に半導体圧力センサチップと熱膨張係数の近似
するスペーサを介して半導体圧力センサチップを接続し
たことを特徴とするものである。Structure and Effects of the Invention The present invention is a semiconductor pressure sensor in which a semiconductor pressure sensor chip is arranged on the upper surface of a base, a pressure introduction pipe is provided on the lower surface of the base, and the pressure guided to the semiconductor pressure sensor chip is detected. , the base is made of alumina ceramic, and the semiconductor pressure sensor chip is connected to the top surface of the base via a spacer having a coefficient of thermal expansion similar to that of the semiconductor pressure sensor chip.
このような特徴を有する本発明によれば、基台として従
来のジルコンセラミックより高い強度を有するアルミナ
セラミックを用いているので、リードフレームや圧力導
入パイプに応力が加わった場合にも容易に破壊すること
はない。又アルミナセラミックの基台上に半導体圧力セ
ンサチップと熱膨張係数が近（以するジルコンセラミッ
ク等のスペーサを介して半導体圧力センサチップを接続
している。そのため圧力センサチップを基台上に確実に
接続することが可能であり、接着後に温度変動によって
クリックやリークが生じるといっ漬恐れがなく、確実な
接続によって安定して圧力を検知することが可能であっ
て、使い易い半導体圧力センサとすることができる。According to the present invention, which has such characteristics, alumina ceramic, which has higher strength than conventional zircon ceramic, is used as the base, so it will not easily break even if stress is applied to the lead frame or pressure introduction pipe. Never. In addition, the semiconductor pressure sensor chip is connected to the alumina ceramic base via a spacer made of zircon ceramic, which has a thermal expansion coefficient close to that of the semiconductor pressure sensor chip.Therefore, the pressure sensor chip can be securely placed on the base. To provide an easy-to-use semiconductor pressure sensor that can be connected, has no risk of being stuck if clicks or leaks occur due to temperature fluctuations after bonding, and can stably detect pressure through a secure connection. be able to.
実施例の説明
第１図（ａｌは本発明による半導体圧力センサの一実施
例を示す上面図、第１図（ｂｌはその側面図である。こ
れらの図において本発明の半導体圧力センサは基台１０
としてアルミナセラミックを用いる。DESCRIPTION OF EMBODIMENTS FIG. 1 (al is a top view showing an embodiment of the semiconductor pressure sensor according to the present invention, FIG. 1 (bl is a side view thereof). In these figures, the semiconductor pressure sensor of the present invention is 10
Alumina ceramic is used as the material.
アルミナセラミックは従来より基台として用いられてい
るジルコンセラミックよりも曲げ強度が約２倍強い材料
である。そしてこの基台１０の中央に前述した従来例と
同じく言通孔１０ａを設け、下面にメタライズ層４を蒸
着等によって形成し圧力導入パイプ５を取付ける。そし
てこの基台１０の上面には従来例と同じく金属パターン
となるメタライズ層４を形成してリードフレーム７を取
付ける。そしてこの基台２の上面中央部にも同様にメタ
ライズ層４を設はモリブデンワッシャ１１を接続し、そ
の上面にメタライズ層４を設ける。そしてこのモリブデ
ンワッシャ１１の上部にメタライズ層４を介してジルコ
ンセラミックから成るスペーサ１２を設け、その上部に
半導体圧力センサチップ１を接合する。圧力センサチッ
プ１はブリッジ構造となっており６本の電極を有してい
る。Alumina ceramic is a material that has approximately twice the bending strength as zircon ceramic, which has been conventionally used as a base. A communication hole 10a is provided in the center of this base 10 as in the conventional example described above, a metallized layer 4 is formed on the lower surface by vapor deposition, etc., and a pressure introduction pipe 5 is attached. Then, on the upper surface of this base 10, a metallized layer 4 serving as a metal pattern is formed as in the conventional example, and a lead frame 7 is attached. A metallized layer 4 is similarly provided at the center of the upper surface of this base 2, and a molybdenum washer 11 is connected thereto, and the metallized layer 4 is provided on the upper surface thereof. A spacer 12 made of zircon ceramic is provided on the top of this molybdenum washer 11 with a metallized layer 4 in between, and the semiconductor pressure sensor chip 1 is bonded to the top of the spacer 12 . The pressure sensor chip 1 has a bridge structure and has six electrodes.
半導体圧力センサチップ１の各電極を従来例と同様に金
ワイヤ８によって電極パターンとなる基台１０の上面の
メタライズ層４に接続し、各リードフレーム７と電気的
な接続を行う。As in the conventional example, each electrode of the semiconductor pressure sensor chip 1 is connected to the metallized layer 4 on the upper surface of the base 10, which serves as an electrode pattern, by a gold wire 8, and electrically connected to each lead frame 7.
このように構成された圧力センサ用ステムを用いるとシ
リコンのダイヤフラム型圧力センサチップは、熱膨張係
数がシリコン圧力センサチップにほぼ等しいジルコンセ
ラミックのスペーサ１２上に接着されるため、熱ストレ
スを受けにくくなり容易に接着することが可能である。When using the pressure sensor stem configured in this way, the silicon diaphragm pressure sensor chip is bonded onto the zircon ceramic spacer 12, which has a coefficient of thermal expansion approximately equal to that of the silicon pressure sensor chip, so it is less susceptible to thermal stress. Therefore, it can be easily adhered.
又接着後にも接続部分のクリックによりリークの不良を
生じる恐れがなくなる。Further, even after bonding, there is no risk of leakage defects due to clicks at the connected portions.
尚本実施例に用いたモリブデンワッシャ１１はセラミッ
クに熱膨張係数が近い材料として選択したもので、他の
材料、例えばタングステン等を用いてもよい。又本実施
例では半導体圧力センサチッブに直接接続されるスペー
サとしてジルコンセラミックを用いているが、半導体圧
力センサチソプと熱膨張係数の等しい他の材料を用いる
ことも可能である。The molybdenum washer 11 used in this embodiment was selected as a material having a coefficient of thermal expansion close to that of ceramic, and other materials such as tungsten may also be used. Furthermore, although zircon ceramic is used as the spacer directly connected to the semiconductor pressure sensor chip in this embodiment, it is also possible to use other materials having the same coefficient of thermal expansion as the semiconductor pressure sensor chip.
更に第１図に示した本実施例ではジルコンセラミックの
スペーサ１２をモリブデンワッシャ１１を介して基台１
０に接続しているが、他の接着材や半導体圧力センサチ
ソプの接着に用いる低融点ガラスより融点の高い他の低
融点ガラスによって直接基台１０に接合することも可能
である。Furthermore, in this embodiment shown in FIG.
0, but it is also possible to directly bond to the base 10 using another adhesive or another low melting point glass that has a higher melting point than the low melting point glass used for bonding the semiconductor pressure sensor.
第１図（ａ）は本発明による半導体圧力センサの一実施
例を示す上面図、第１図（ｂｌはその側面図であり、第
２図（ａｌは従来の半導体圧力センサの一例を示す上面
図、第２回出）はその側面図である。
１−−−−−−−半導体圧力センサチソプ ２． １０
−−−−−−基台 ３−−−−一低融点ガラス ４−−
−−−−メタライズ層 ５−−−−−一圧力導入パイブ
７−−−−−−リードフレーム ８−−−−−−−金
ワイヤ １．１−−−−−−−モリブデンワッシャ １
２−−−−−スペーサ特許出願人 立石電機株式会社
代理人 弁理士 岡本宜喜（他１名）FIG. 1(a) is a top view showing an embodiment of a semiconductor pressure sensor according to the present invention; FIG. 1(bl is a side view thereof); FIG. Figure 2) is a side view of the same. 1. Semiconductor pressure sensor 2.10
-------- Base 3 --- Low melting point glass 4 ---
---Metallized layer 5--------1 Pressure introduction pipe 7-----Lead frame 8--Gold wire 1.1-----Molybdenum washer 1
2---Spacer patent applicant Tateishi Electric Co., Ltd. agent Patent attorney Yoshiki Okamoto (1 other person)
Claims (3)
該基台の下面に圧力導入パイプを設け、前記半導体圧力
センサチップに導かれる圧力を検知する半導体圧力セン
サにおいて、 前記基台をアルミナセラミックにより形成し、前記基台
の上面に前記半導体圧力センサチソプと熱膨張係数の近
似するスペーサを介して半導体圧力センサチップを接続
したことを特徴とする半導体圧力センサ。(1) Place a semiconductor pressure sensor on the top of the base,
In a semiconductor pressure sensor that detects the pressure introduced to the semiconductor pressure sensor chip by providing a pressure introduction pipe on the bottom surface of the base, the base is formed of alumina ceramic, and the semiconductor pressure sensor chip and the semiconductor pressure sensor chip are provided on the top surface of the base. A semiconductor pressure sensor characterized in that a semiconductor pressure sensor chip is connected via a spacer having a similar coefficient of thermal expansion.
を特徴とする特許請求の範囲第１項記載の半導体圧力セ
ンサ。(2) The semiconductor pressure sensor according to claim 1, wherein the spacer is made of zircon ceramic.
記アルミナセラミックの基台上に形成されていることを
特徴とする特許請求の範囲第１項記載の半導体圧力セン
サ。(3) The semiconductor pressure sensor according to claim 1, wherein the spacer is formed on the alumina ceramic base via a molybdenum washer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11056284A JPS60253280A (en) | 1984-05-29 | 1984-05-29 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11056284A JPS60253280A (en) | 1984-05-29 | 1984-05-29 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60253280A true JPS60253280A (en) | 1985-12-13 |
Family
ID=14538974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11056284A Pending JPS60253280A (en) | 1984-05-29 | 1984-05-29 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60253280A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0441644U (en) * | 1990-08-08 | 1992-04-08 | ||
| JPH0447641U (en) * | 1990-08-24 | 1992-04-22 | ||
| WO2000067310A1 (en) * | 1999-04-30 | 2000-11-09 | Daimlerchrysler Ag | Microelectronic subassembly |
| JP2001141587A (en) * | 1999-11-15 | 2001-05-25 | Hokuriku Electric Ind Co Ltd | Semiconductor pressure sensor |
| JP2010509573A (en) * | 2006-11-13 | 2010-03-25 | インフィコン ゲゼルシャフト ミット ベシュレンクテル ハフツング | Vacuum diaphragm measuring cell and method for manufacturing such a measuring cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519864A (en) * | 1978-07-28 | 1980-02-12 | Hitachi Ltd | Semiconductor distortion gauge type pressure sensor and manufacture thereof |
| JPS5946830A (en) * | 1982-09-10 | 1984-03-16 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
-
1984
- 1984-05-29 JP JP11056284A patent/JPS60253280A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519864A (en) * | 1978-07-28 | 1980-02-12 | Hitachi Ltd | Semiconductor distortion gauge type pressure sensor and manufacture thereof |
| JPS5946830A (en) * | 1982-09-10 | 1984-03-16 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0441644U (en) * | 1990-08-08 | 1992-04-08 | ||
| JPH0447641U (en) * | 1990-08-24 | 1992-04-22 | ||
| WO2000067310A1 (en) * | 1999-04-30 | 2000-11-09 | Daimlerchrysler Ag | Microelectronic subassembly |
| US6740982B2 (en) | 1999-04-30 | 2004-05-25 | Conti Temic Microelectronic Gmbh | Microelectronic package with an attachment layer including spacer elements |
| JP2001141587A (en) * | 1999-11-15 | 2001-05-25 | Hokuriku Electric Ind Co Ltd | Semiconductor pressure sensor |
| JP4651763B2 (en) * | 1999-11-15 | 2011-03-16 | 北陸電気工業株式会社 | Semiconductor pressure sensor |
| JP2010509573A (en) * | 2006-11-13 | 2010-03-25 | インフィコン ゲゼルシャフト ミット ベシュレンクテル ハフツング | Vacuum diaphragm measuring cell and method for manufacturing such a measuring cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100372340B1 (en) | Pressure Sensor and Method of Manufacturing the Same | |
| JPS61176832A (en) | Transducer-insert, manufacture thereof and mechanical variation measuring sensor | |
| JPS60253280A (en) | Semiconductor pressure sensor | |
| JPH04307769A (en) | Electronic device and forming method thereof | |
| JPH06232423A (en) | Semiconductor pressure sensor | |
| US6895822B2 (en) | Apparatus and method for interconnecting leads in a high temperature pressure transducer | |
| JP2000046667A (en) | Semiconductor pressure sensor element | |
| JPS63175482A (en) | Pressure sensor | |
| JP2001004473A (en) | Semiconductor pressure sensor and manufacture thereof | |
| JP2000241274A (en) | Semiconductor pressure sensor, manufacture thereof and parts thereof | |
| JPS6175535A (en) | Semiconductor device | |
| JPH1168120A (en) | Semiconductor pressure sensor and its production | |
| JPS581551B2 (en) | semiconductor pressure transducer | |
| KR830000113B1 (en) | Semiconductor pressure transducer | |
| JPH03199937A (en) | Semiconductor pressure sensor | |
| JPS6327724A (en) | Semiconductor pressure sensor | |
| JP2000009566A (en) | Semiconductor pressure sensor | |
| JPH0566537B2 (en) | ||
| JPH11337433A (en) | Semiconductor pressure sensor | |
| JPH03218428A (en) | Semiconductor pressure sensor | |
| CN116839766A (en) | High-precision silicon piezoresistive pressure sensor chip | |
| JP3854206B2 (en) | Semiconductor device | |
| JPS6019641B2 (en) | thermistor | |
| JPH02285649A (en) | Semiconductor device | |
| JPH1137873A (en) | Semiconductor pressure sensor |