JPH03218428A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH03218428A JPH03218428A JP1396590A JP1396590A JPH03218428A JP H03218428 A JPH03218428 A JP H03218428A JP 1396590 A JP1396590 A JP 1396590A JP 1396590 A JP1396590 A JP 1396590A JP H03218428 A JPH03218428 A JP H03218428A
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- sensor chip
- semiconductor
- bonded
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 5
- 239000013464 silicone adhesive Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229920001296 polysiloxane Polymers 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 の 本発明は、半導体圧力センサに関する。[Detailed description of the invention] of The present invention relates to semiconductor pressure sensors.
支釆立11
半導体圧力センサは第2図(a)の正面図および同図(
b)の側面図に示すようにシリコン基板10にエッチン
グ等により形成された円形薄膜のダイアフラム11を有
しており、このダイアフラム11に設けられたピエゾ抵
抗層からなるゲージ抵抗R1〜R4はA又はB方向の圧
力を受けることにより抵抗値が変化する。第3図はこれ
らの抵抗R1〜R4の接続間係を示しており、抵抗Rl
−R4は図示の通リホイートストンブリッジに結線され
ている。ダイアフラムl1は圧力を受けるとひずみ、中
央部の抵抗R2およびR3の抵抗値は引張応力で大きく
なり、逆に周辺部の抵抗R2, R3の抵抗値は圧縮応
力で小さくなる。Shikadate 11 The semiconductor pressure sensor is shown in the front view in Figure 2 (a) and in the same figure (
As shown in the side view of b), it has a circular thin film diaphragm 11 formed by etching or the like on a silicon substrate 10, and the gauge resistors R1 to R4 made of piezoresistive layers provided on this diaphragm 11 are A or R4. The resistance value changes by receiving pressure in direction B. FIG. 3 shows the connection relationship of these resistors R1 to R4, and the resistor Rl
-R4 is connected to the illustrated rewheatstone bridge. The diaphragm l1 is strained when subjected to pressure, and the resistance values of the resistors R2 and R3 in the central part become large due to tensile stress, and conversely, the resistance values of the resistors R2 and R3 in the peripheral part become small due to compressive stress.
したがって、圧力の大きさが第3図の端子12、13間
に電気信号の形であらわれる。尚、抵抗R1〜R4は図
示のように電源Vccに接続される。Therefore, the magnitude of the pressure appears in the form of an electrical signal between terminals 12 and 13 in FIG. Note that the resistors R1 to R4 are connected to the power supply Vcc as shown.
このようなダイアフラム11を有するセンサチップ1は
ダイアフラム11とその支持部材との間に歪が生じると
、その分だけオフセット電圧が生じる。In the sensor chip 1 having such a diaphragm 11, when distortion occurs between the diaphragm 11 and its support member, an offset voltage is generated correspondingly.
これを避けるためにセンサチップ1とそれを取り付ける
金属ステムとの間に台座を設けることが一般に行なわれ
ている。そして、台座とセンサチップとの結合は従来低
融点ガラス等によって行なっていた。To avoid this, it is common practice to provide a pedestal between the sensor chip 1 and the metal stem to which it is attached. Conventionally, the pedestal and the sensor chip have been connected using low-melting glass or the like.
が しよ゛とする
しかしながら、これでは接着剤としての低融点ガラスの
ために台座とセンサチップとの間に熱による歪が生じる
という問題があった。However, this has the problem that heat causes distortion between the pedestal and the sensor chip due to the low melting point glass used as the adhesive.
本発明はこのような点に鑑みなされたものであって、熱
ひずみが生じにくいように工夫した半導体圧力センサを
提供することを目的とする。The present invention has been made in view of these points, and it is an object of the present invention to provide a semiconductor pressure sensor that is devised so that thermal strain is less likely to occur.
゛するための
上記目的を達成するため、本発明では、ピエゾ抵抗層を
備えたダイアフラムを有する半導体センサチップと、該
半導体センサチップを取り付けた台座と、該台座を取り
付けた金属ステムとからなる半導体圧力センサにおいて
、前記半導体センサチップを前記台座に対しシリコン系
の接着剤で接着した構成としている。In order to achieve the above object, the present invention provides a semiconductor sensor comprising a semiconductor sensor chip having a diaphragm provided with a piezoresistive layer, a pedestal to which the semiconductor sensor chip is attached, and a metal stem to which the pedestal is attached. In the pressure sensor, the semiconductor sensor chip is bonded to the pedestal using a silicon adhesive.
作二一月一
このような構成によると、台座と半導体センサチップと
の間の接着剤が熱に強いため熱ひずみが生じにくくなる
。With this configuration, the adhesive between the pedestal and the semiconductor sensor chip is resistant to heat, making it difficult for thermal distortion to occur.
ス」1例一
以下、本発明の実施例を図面を参照しつつ説明する。第
1図においで、金属スラム3にシリコンよりなる台座2
をシリカペースト5でダイボンディングし、その台座2
の上面にシリコン系の接着剤6を塗布し、センサチップ
1をダイボンディングする。しかる後、センサチップ1
とソート4とをワイヤー7を使ってワイヤーボンディン
グする。EXAMPLE 1 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In FIG. 1, a pedestal 2 made of silicon is attached to a metal slam 3.
die-bonded with silica paste 5, and the pedestal 2
A silicon adhesive 6 is applied to the upper surface of the sensor chip 1, and the sensor chip 1 is die-bonded. After that, sensor chip 1
and sort 4 are wire bonded using wire 7.
このような構造の半導体圧力センサは台座2とセンサチ
ップ1との結合が熱特性の良いシリコン系の接着剤6に
よってなされているため熱ひずみにつよい。The semiconductor pressure sensor having such a structure is resistant to thermal strain because the pedestal 2 and the sensor chip 1 are bonded by a silicon adhesive 6 having good thermal properties.
発』bλ泣速一
以上説明した通シ八 本発明によれば、半導体センサチ
ップと台座との間がシリコン系の接着剤によって結合さ
れているため熱ひずみが発生しにくくなり、信頼性が向
上する。According to the present invention, since the semiconductor sensor chip and the pedestal are bonded using a silicone adhesive, thermal strain is less likely to occur and reliability is improved. do.
第1図は本考案を実施した半導体圧力センサの構造図で
ある。第2図及び第3図はそれに使用する半導体センサ
チップの説明図である。
1・・・半導体センサチップ、 2・・・台座、3・
・・金属ステム、 4・・・ソ6・・・シリコ
ン系の接着剤、
11・・・ダイアフラム。
出 願 人
口−ム株式会社FIG. 1 is a structural diagram of a semiconductor pressure sensor embodying the present invention. FIGS. 2 and 3 are explanatory diagrams of semiconductor sensor chips used therein. 1... Semiconductor sensor chip, 2... Pedestal, 3...
...Metal stem, 4...So6...Silicone adhesive, 11...Diaphragm. Application Population Co., Ltd.
Claims (1)
体センサチップと、該半導体センサチップを取り付けた
台座と、該台座を取り付けた金属ステムとからなる半導
体圧力センサにおいて、前記半導体センサチップを前記
台座に対しシリコン系の接着剤で接着したことを特徴と
する半導体圧力センサ。(1) A semiconductor pressure sensor comprising a semiconductor sensor chip having a diaphragm with a piezoresistive layer, a pedestal to which the semiconductor sensor chip is attached, and a metal stem to which the pedestal is attached, in which the semiconductor sensor chip is attached to the pedestal. On the other hand, a semiconductor pressure sensor is characterized by being bonded with a silicone adhesive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1396590A JPH03218428A (en) | 1990-01-24 | 1990-01-24 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1396590A JPH03218428A (en) | 1990-01-24 | 1990-01-24 | Semiconductor pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03218428A true JPH03218428A (en) | 1991-09-26 |
Family
ID=11847928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1396590A Pending JPH03218428A (en) | 1990-01-24 | 1990-01-24 | Semiconductor pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03218428A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102131A (en) * | 1982-12-03 | 1984-06-13 | Sanyo Electric Co Ltd | Semiconductor pressure sensor |
-
1990
- 1990-01-24 JP JP1396590A patent/JPH03218428A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102131A (en) * | 1982-12-03 | 1984-06-13 | Sanyo Electric Co Ltd | Semiconductor pressure sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6050970A (en) | Semiconductor pressure converter | |
JPH03218428A (en) | Semiconductor pressure sensor | |
JPH10170367A (en) | Semiconductor pressure sensor | |
JP3562390B2 (en) | Semiconductor pressure sensor and method of manufacturing the same | |
JPH0566979B2 (en) | ||
JPH0269630A (en) | Semiconductor pressure sensor | |
JPS60253280A (en) | Semiconductor pressure sensor | |
JP3596199B2 (en) | Semiconductor type pressure sensor | |
JPS59154332A (en) | Semiconductor pressure sensor | |
JPS5983023A (en) | Semiconductor pressure difference detector | |
JP3375533B2 (en) | Semiconductor pressure transducer | |
JP2000241274A (en) | Semiconductor pressure sensor, manufacture thereof and parts thereof | |
JPS5926608Y2 (en) | semiconductor displacement transducer | |
JPS6175535A (en) | Semiconductor device | |
JPS581551B2 (en) | semiconductor pressure transducer | |
JPS6284538A (en) | Stem for semiconductor element | |
JPS61266931A (en) | Pressure sensor | |
JPS5810868B2 (en) | semiconductor strain transducer | |
JPS6261348A (en) | Stem for semiconductor element | |
JPS6124836B2 (en) | ||
JPS63232375A (en) | Stress converter | |
JPS61266930A (en) | Pressure sensor | |
JPH02245631A (en) | Semiconductor pressure sensor | |
JPH0622944U (en) | Sensor chip mounting structure | |
JPH10104262A (en) | Semiconductor acceleration sensor |