JPS63232375A - Stress converter - Google Patents
Stress converterInfo
- Publication number
- JPS63232375A JPS63232375A JP6410087A JP6410087A JPS63232375A JP S63232375 A JPS63232375 A JP S63232375A JP 6410087 A JP6410087 A JP 6410087A JP 6410087 A JP6410087 A JP 6410087A JP S63232375 A JPS63232375 A JP S63232375A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- stress
- doped
- semiconductor
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 6
- 239000011147 inorganic material Substances 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体ピエゾ抵抗効果を利用した応力変換器
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a stress transducer that utilizes a semiconductor piezoresistance effect.
（従来の技術）
従来より、応力変換器にはひずみゲージが用いられてい
るが、近時、変換効率の大なるピエゾ抵抗効果を有する
半導体ひずみゲージが良く用いられている。このひずみ
ゲージは、シリコン単結晶、から切り出されるバルク型
ゲージ、シリコンを真空蒸着法などによって適当な耐熱
性のあるベース上に形成する薄膜型ゲージと、シリコン
の薄片に不純物を部分的にドープして母材に接着するこ
となく、シリコンの薄片をそのまま母材ゲージとする方
法が一般に行われる（参考文献 センサー技術 Ｖｏｌ
、２Ｎｏ、６ １９８２年６月）。(Prior Art) Conventionally, strain gauges have been used as stress transducers, but recently semiconductor strain gauges having a piezoresistive effect with high conversion efficiency have been frequently used. These strain gauges include bulk type gauges cut from silicon single crystal, thin film type gauges formed on a suitable heat-resistant base using silicon vacuum evaporation, and thin film gauges made by partially doping impurities into a thin piece of silicon. A common method is to use a thin piece of silicon as a base material gauge without bonding it to the base material (Reference: Sensor Technology Vol.
, 2 No. 6 June 1982).
（発明が解決しようとする問題点）
前記従来のバルク型ゲージでは、その加工上、素子を細
く高抵抗とすることができず、また母材が導体の場合、
ゲージが低抵抗体のため、絶縁層を設けなければならな
い。また真空蒸着による場合は母材の材質が限られ、ま
た変換効率も悪い。(Problems to be Solved by the Invention) In the conventional bulk type gauge, it is not possible to make the element thin and high in resistance due to its processing, and when the base material is a conductor,
Since the gauge is a low resistance material, an insulating layer must be provided. Furthermore, when using vacuum evaporation, the material of the base material is limited and the conversion efficiency is also poor.
不純物を半導体にドープしたものは母材が半導体となる
ため、その用途も限られる等の問題点があった。When semiconductors are doped with impurities, the base material becomes a semiconductor, which poses problems such as limited applications.
（問題点を解決するための手段）
本発明は、上記問題点を解決するためになされたもので
、半導体薄片の表面の一部分に不純物をドープし、その
ドープした部分を低抵抗体とした半導体薄片を母材に無
機材料で接着し、しがる後前記母材に応力を生ぜしめそ
の応力をピエゾ抵抗効果による抵抗変化として前記母材
の応力を検出するようにしたものである。(Means for Solving the Problems) The present invention has been made to solve the above problems, and consists of doping a part of the surface of a semiconductor thin piece with an impurity, and making the doped part a low-resistance semiconductor. A thin piece is bonded to a base material with an inorganic material, and after bonding, stress is generated in the base material, and the stress in the base material is detected as a change in resistance due to the piezoresistance effect.
（作 用）
本発明によれば、母材に生じた応力は、無機材料でなる
接着剤を介して不純物をドープした半導体抵抗部に伝え
られ、その抵抗部に生じた応力は変換効率よく抵抗変化
として検出することができる。(Function) According to the present invention, the stress generated in the base material is transmitted to the semiconductor resistance portion doped with impurities via the adhesive made of an inorganic material, and the stress generated in the resistance portion is transferred to the resistance portion with high conversion efficiency. It can be detected as a change.
（実施例）
第１図、第２図は本発明の一実施例を説明する図であり
、１は力又は変位５を直接受ける母材、２はシリコン半
導体薄片の表面の一部分に不純物をドープしたピエゾ抵
抗素子で、 ピエゾ抵抗素子２は接着剤３を介して母材
１に接着しである。(Embodiment) FIGS. 1 and 2 are diagrams explaining an embodiment of the present invention, in which 1 is a base material that directly receives force or displacement 5, and 2 is a silicon semiconductor thin piece doped with impurities in a part of its surface. The piezoresistive element 2 is bonded to the base material 1 via an adhesive 3.
なお、４はピエゾ抵抗素子２の不純物拡散部分６より導
出されたリード線である。Note that 4 is a lead wire led out from the impurity diffusion portion 6 of the piezoresistive element 2.
本実施例の場合は母材１としてバネ用ステンレス！ｌ
（ＳＵＳ３０１ Ｃ８Ｐ／Ｈ）を用いて片持はりとし
、自由端に力又は変位５を加えると、最大曲げ応力は固
定端に生ずる。ピエゾ抵抗素子２をその部分の近傍に接
着剤３を介して接着しである。この接着は、母材１にｐ
ｂ○・Ｂ、Ｏ，系低融点ガラス粉末（平均粒径２４μｍ
）をアクリル系樹脂のビークルに１２：１の比に混練し
たペーストを厚さ８０μｍでスクリーン印刷し、印刷し
た部分にピエゾ抵抗素子２（巾４鴫、奥行３ ｒｍ、厚
さ６０μｍ）をのせガラス粉末を溶融して接着する。In this example, the base material 1 is stainless steel for springs! l
(SUS301 C8P/H) is used as a cantilever beam, and when force or displacement 5 is applied to the free end, the maximum bending stress occurs at the fixed end. A piezoresistive element 2 is bonded to the vicinity of that portion using an adhesive 3. This adhesion is applied to the base material 1.
b○・B, O, system low melting point glass powder (average particle size 24 μm
) was mixed into an acrylic resin vehicle at a ratio of 12:1 and then screen-printed to a thickness of 80 μm, and a piezoresistive element 2 (width 4 mm, depth 3 rm, thickness 60 μm) was placed on the printed area and a glass plate was placed. The powder is melted and bonded.
ピエゾ抵抗素子２は、シリコンの基板上に不純物を拡散
してケージ部とするためのＳｉＯ２のマスクを形成し、
ゲージ部分に不純物（ボロン）を表面濃度９ Ｘ １０
”／ｃ＋＋３で拡散して、Ｓｉ基板と異なる低抵抗（１
５０Ω／口）のＰ形波散層を形成する。次に全面にＳｉ
ｎ、の表面保護膜を形成し、電極部に必要な箇所の５ｉ
ｎ２を除く。この部分に厚さ２μｍのＡ１を蒸着して、
その蒸着部分に、直径５０μｍのリード線４をボンデイ
ン、グする。このようにして得られた半導体ひずみゲー
ジは、半導体のピエゾ抵抗効果を用いているので、応力
−抵抗変化の直線性は、その応力が２０ｋｇ／ｍｍ”程
度では０．１％である。片持はりの片面にピエゾ抵抗素
子を接着した場合その変位−抵抗変化の直線性は０．５
％になる。The piezoresistive element 2 is formed by forming a SiO2 mask on a silicon substrate to form a cage portion by diffusing impurities.
Impurity (boron) on the gauge part at a surface concentration of 9 x 10
”/c++3 to create a low resistance (1
50Ω/port) to form a P-type wave dispersion layer. Next, Si is applied to the entire surface.
Form a surface protective film of 5i on the electrode part and
Exclude n2. Deposit A1 with a thickness of 2 μm on this part,
A lead wire 4 having a diameter of 50 μm is bonded to the vapor deposited portion. Since the semiconductor strain gauge obtained in this way uses the piezoresistance effect of the semiconductor, the linearity of stress-resistance change is 0.1% when the stress is about 20 kg/mm. When a piezoresistance element is glued to one side of a beam, the linearity of displacement-resistance change is 0.5
%become.
このＱ、５％が問題になる用途では、片持はりの両面に
ピエゾ抵抗素子２を接着し、縦ひずみを消去するブリッ
ジ配線とすれば、直線性が０．１％程度となり、半導体
拡散ピエゾ抵抗素子以外の各種ゲージを使用した場合と
同様になることは言うまでもない。In applications where this Q of 5% is a problem, if piezoresistive elements 2 are glued to both sides of the cantilever beam and bridge wiring is used to eliminate longitudinal strain, the linearity will be about 0.1%, and the semiconductor diffused piezoelectric Needless to say, the result is the same as when various gauges other than resistive elements are used.
上記はｎ形シリコンに■族原子である硼素（Ｂ）を導入
した場合であるが、Ｐ形シリコンにＶ族原子であるリン
（Ｐ）を導入しても、シリコンの変わりにゲルマニウム
を用いても、同様の半導体ピエゾ抵抗素子を作ることが
できる。また、前記実施例には接着剤３として低融点ガ
ラスを用いたため、クリープ特性は０．１％と非常に良
い。The above is a case where boron (B), a group II atom, is introduced into n-type silicon, but even if phosphorus (P), a group V atom, is introduced into p-type silicon, germanium is used instead of silicon. A similar semiconductor piezoresistive element can also be made. Furthermore, since low melting point glass was used as the adhesive 3 in the above embodiment, the creep property was very good at 0.1%.
半田）、有機系接着材（エポキシ、フェノール。solder), organic adhesives (epoxy, phenol).
アクリル）が用いられる。acrylic) is used.
第３図′は第１図、第２図の説明した構造の半導体ひず
みゲージを変位計として適用した場合の実験値で、変位
５ｍｍで出力が５００ｍＶと大きく、直線性が０．１％
と良く、ヒステリシスも０．１％と少ない、精度のすぐ
れた変位計ができる。Figure 3' shows experimental values when a semiconductor strain gauge with the structure explained in Figures 1 and 2 is used as a displacement meter, with a large output of 500 mV at a displacement of 5 mm, and a linearity of 0.1%.
It is possible to create a highly accurate displacement meter with a low hysteresis of 0.1%.
（発明の効果）
以上詳細に説明したように本発明によれば、ピエゾ抵抗
素子を半導体に不純物をドープすることにより作り、そ
の素子を母材に接着させて、母材に生じた応力をその素
子の抵抗変化に変換するので変換効率が大きく、母材の
形状、材質が任意に選べ、更に接着剤として無機材料を
用いたのでクリープ特性が優れているなどの利点を有す
る。さらに応力変換器であるので、母材を適当に選べば
加速度計、圧力計、温度計にも適用可能となる利点を有
する。(Effects of the Invention) As described in detail above, according to the present invention, a piezoresistive element is made by doping a semiconductor with an impurity, and the element is bonded to a base material, so that the stress generated in the base material is absorbed. It has advantages such as high conversion efficiency because it converts the resistance change of the element, the shape and material of the base material can be selected arbitrarily, and since an inorganic material is used as the adhesive, creep characteristics are excellent. Furthermore, since it is a stress transducer, it has the advantage that it can be applied to accelerometers, pressure gauges, and thermometers if the base material is selected appropriately.
第１図〜第３図は本発明の一実施例を示し、第１図は応
力変換器の斜視図、第２図（Ａ）はピエゾ抵抗素子２と
母材１に取付けた部分を示す平面図、（Ｂ）はそのｘ−
Ｘ線断面図、第３図はこの応力変換器を変位計として用
いた場合の測定結果である。
１・・・母材 ２・・・ピエゾ抵抗素子３・・
・接着剤 ４・・・リード線５・・・力または変
位 ６・・・不純物拡散部分第１図1 to 3 show an embodiment of the present invention, FIG. 1 is a perspective view of the stress transducer, and FIG. 2 (A) is a plane view showing the piezoresistive element 2 and the part attached to the base material 1. Figure, (B) is the x-
The X-ray cross-sectional view and FIG. 3 show the measurement results when this stress transducer was used as a displacement meter. 1... Base material 2... Piezoresistance element 3...
・Adhesive 4... Lead wire 5... Force or displacement 6... Impurity diffusion part Figure 1
Claims (1)
ープした部分を低抵抗体とした半導体薄片を母材に無機
材料で接着し、しかる後前記母材に応力を生ぜしめその
応力をピエゾ抵抗効果による抵抗変化として前記母材の
応力を検出するようにしたことを特徴とする応力変換器
。A part of the surface of the semiconductor thin piece is doped with an impurity, and the doped part is used as a low resistance substance.The semiconductor thin piece is bonded to a base material with an inorganic material, and then stress is generated in the base material and the stress is transferred to the piezoresistance effect. A stress transducer characterized in that the stress in the base material is detected as a resistance change caused by the change in resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6410087A JPS63232375A (en) | 1987-03-20 | 1987-03-20 | Stress converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6410087A JPS63232375A (en) | 1987-03-20 | 1987-03-20 | Stress converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63232375A true JPS63232375A (en) | 1988-09-28 |
Family
ID=13248317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6410087A Pending JPS63232375A (en) | 1987-03-20 | 1987-03-20 | Stress converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63232375A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113117A (en) * | 1989-09-08 | 1992-05-12 | Massachusetts Institute Of Technology | Miniature electrical and mechanical structures useful for constructing miniature robots |
| JP2001272287A (en) * | 2000-03-27 | 2001-10-05 | Tadahiro Kato | Strain-detecting sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52142489A (en) * | 1976-05-21 | 1977-11-28 | Hitachi Ltd | Semiconductor strain measuring device and its production |
| JPS56118375A (en) * | 1980-02-22 | 1981-09-17 | Hitachi Ltd | Semiconductor displacement convertor |
-
1987
- 1987-03-20 JP JP6410087A patent/JPS63232375A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52142489A (en) * | 1976-05-21 | 1977-11-28 | Hitachi Ltd | Semiconductor strain measuring device and its production |
| JPS56118375A (en) * | 1980-02-22 | 1981-09-17 | Hitachi Ltd | Semiconductor displacement convertor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113117A (en) * | 1989-09-08 | 1992-05-12 | Massachusetts Institute Of Technology | Miniature electrical and mechanical structures useful for constructing miniature robots |
| JP2001272287A (en) * | 2000-03-27 | 2001-10-05 | Tadahiro Kato | Strain-detecting sensor |
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