JPS5784178A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS5784178A JPS5784178A JP55160465A JP16046580A JPS5784178A JP S5784178 A JPS5784178 A JP S5784178A JP 55160465 A JP55160465 A JP 55160465A JP 16046580 A JP16046580 A JP 16046580A JP S5784178 A JPS5784178 A JP S5784178A
- Authority
- JP
- Japan
- Prior art keywords
- channel layer
- layer
- oxide film
- thickness
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55160465A JPS5784178A (en) | 1980-11-14 | 1980-11-14 | Field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55160465A JPS5784178A (en) | 1980-11-14 | 1980-11-14 | Field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5784178A true JPS5784178A (en) | 1982-05-26 |
| JPH0517713B2 JPH0517713B2 (enrdf_load_stackoverflow) | 1993-03-09 |
Family
ID=15715525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55160465A Granted JPS5784178A (en) | 1980-11-14 | 1980-11-14 | Field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5784178A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62282465A (ja) * | 1986-03-05 | 1987-12-08 | イクシス・コーポレーション | モノリシツク半導体デバイスおよびその製造方法 |
| JPS6381846A (ja) * | 1986-09-25 | 1988-04-12 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
| JPH0320453U (enrdf_load_stackoverflow) * | 1989-07-11 | 1991-02-28 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938585A (enrdf_load_stackoverflow) * | 1972-08-10 | 1974-04-10 | ||
| JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
-
1980
- 1980-11-14 JP JP55160465A patent/JPS5784178A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938585A (enrdf_load_stackoverflow) * | 1972-08-10 | 1974-04-10 | ||
| JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62282465A (ja) * | 1986-03-05 | 1987-12-08 | イクシス・コーポレーション | モノリシツク半導体デバイスおよびその製造方法 |
| JPS6381846A (ja) * | 1986-09-25 | 1988-04-12 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
| JPH0320453U (enrdf_load_stackoverflow) * | 1989-07-11 | 1991-02-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0517713B2 (enrdf_load_stackoverflow) | 1993-03-09 |
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