JPS5784178A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS5784178A
JPS5784178A JP55160465A JP16046580A JPS5784178A JP S5784178 A JPS5784178 A JP S5784178A JP 55160465 A JP55160465 A JP 55160465A JP 16046580 A JP16046580 A JP 16046580A JP S5784178 A JPS5784178 A JP S5784178A
Authority
JP
Japan
Prior art keywords
channel layer
layer
oxide film
thickness
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55160465A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517713B2 (enrdf_load_stackoverflow
Inventor
Yoshiyasu Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55160465A priority Critical patent/JPS5784178A/ja
Publication of JPS5784178A publication Critical patent/JPS5784178A/ja
Publication of JPH0517713B2 publication Critical patent/JPH0517713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP55160465A 1980-11-14 1980-11-14 Field-effect transistor Granted JPS5784178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160465A JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160465A JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5784178A true JPS5784178A (en) 1982-05-26
JPH0517713B2 JPH0517713B2 (enrdf_load_stackoverflow) 1993-03-09

Family

ID=15715525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160465A Granted JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5784178A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282465A (ja) * 1986-03-05 1987-12-08 イクシス・コーポレーション モノリシツク半導体デバイスおよびその製造方法
JPS6381846A (ja) * 1986-09-25 1988-04-12 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0320453U (enrdf_load_stackoverflow) * 1989-07-11 1991-02-28

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938585A (enrdf_load_stackoverflow) * 1972-08-10 1974-04-10
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938585A (enrdf_load_stackoverflow) * 1972-08-10 1974-04-10
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282465A (ja) * 1986-03-05 1987-12-08 イクシス・コーポレーション モノリシツク半導体デバイスおよびその製造方法
JPS6381846A (ja) * 1986-09-25 1988-04-12 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0320453U (enrdf_load_stackoverflow) * 1989-07-11 1991-02-28

Also Published As

Publication number Publication date
JPH0517713B2 (enrdf_load_stackoverflow) 1993-03-09

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