JPS5782281A - Output level storage circuit - Google Patents

Output level storage circuit

Info

Publication number
JPS5782281A
JPS5782281A JP55155947A JP15594780A JPS5782281A JP S5782281 A JPS5782281 A JP S5782281A JP 55155947 A JP55155947 A JP 55155947A JP 15594780 A JP15594780 A JP 15594780A JP S5782281 A JPS5782281 A JP S5782281A
Authority
JP
Japan
Prior art keywords
mosfets
output
storage circuit
output level
level storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55155947A
Other languages
Japanese (ja)
Other versions
JPH0146953B2 (en
Inventor
Yoshiaki Onishi
Yukinobu Chiba
Fumiaki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55155947A priority Critical patent/JPS5782281A/en
Publication of JPS5782281A publication Critical patent/JPS5782281A/en
Publication of JPH0146953B2 publication Critical patent/JPH0146953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To prevent an output level from effect of leakage current and noise, by providing an active element which is operated so as to hold the output signal level of a drive means through the supply of an output signal of a drive means. CONSTITUTION:An output buffer DOB consists of MOSFETs Q5, and Q6 for cut, signal input MOSFETs Q1, and Q2, MOSFETs Q3 and Q4 for output drive in which gates and drains are coupled in crossing, MOSFETs Q9, and Q10 for operation control, MOSFETs Q7, and Q8 and MOSFETs Q20, and Q21 for operation control. An output level storage circuit AC is coupled with an output drive line d0 of the output buffer DOB. The output level storage circuit AC consists of an MOSFETQ11 of diode connection, MOSFETQ12 for reset, and MOS capacitive element Q14 substantially consisting of MOSFET and MOSFETQ15.
JP55155947A 1980-11-07 1980-11-07 Output level storage circuit Granted JPS5782281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55155947A JPS5782281A (en) 1980-11-07 1980-11-07 Output level storage circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155947A JPS5782281A (en) 1980-11-07 1980-11-07 Output level storage circuit

Publications (2)

Publication Number Publication Date
JPS5782281A true JPS5782281A (en) 1982-05-22
JPH0146953B2 JPH0146953B2 (en) 1989-10-11

Family

ID=15616996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155947A Granted JPS5782281A (en) 1980-11-07 1980-11-07 Output level storage circuit

Country Status (1)

Country Link
JP (1) JPS5782281A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050694A (en) * 1983-08-26 1985-03-20 Mitsubishi Electric Corp Dynamic random access memory
JPS61294687A (en) * 1985-06-21 1986-12-25 Hitachi Ltd Semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625291A (en) * 1979-08-07 1981-03-11 Nec Corp Semiconductor circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5625291A (en) * 1979-08-07 1981-03-11 Nec Corp Semiconductor circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050694A (en) * 1983-08-26 1985-03-20 Mitsubishi Electric Corp Dynamic random access memory
JPS61294687A (en) * 1985-06-21 1986-12-25 Hitachi Ltd Semiconductor storage device

Also Published As

Publication number Publication date
JPH0146953B2 (en) 1989-10-11

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