JPS577982A - Manufacture of light emitting element - Google Patents

Manufacture of light emitting element

Info

Publication number
JPS577982A
JPS577982A JP8129480A JP8129480A JPS577982A JP S577982 A JPS577982 A JP S577982A JP 8129480 A JP8129480 A JP 8129480A JP 8129480 A JP8129480 A JP 8129480A JP S577982 A JPS577982 A JP S577982A
Authority
JP
Japan
Prior art keywords
layer
type
electrode
metal
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8129480A
Other languages
English (en)
Inventor
Tatsuyuki Sanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8129480A priority Critical patent/JPS577982A/ja
Publication of JPS577982A publication Critical patent/JPS577982A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8129480A 1980-06-18 1980-06-18 Manufacture of light emitting element Pending JPS577982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8129480A JPS577982A (en) 1980-06-18 1980-06-18 Manufacture of light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8129480A JPS577982A (en) 1980-06-18 1980-06-18 Manufacture of light emitting element

Publications (1)

Publication Number Publication Date
JPS577982A true JPS577982A (en) 1982-01-16

Family

ID=13742356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8129480A Pending JPS577982A (en) 1980-06-18 1980-06-18 Manufacture of light emitting element

Country Status (1)

Country Link
JP (1) JPS577982A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03231424A (ja) * 1990-02-06 1991-10-15 Nec Corp 化合物半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929068A (ja) * 1972-07-12 1974-03-15
JPS50116181A (ja) * 1974-02-26 1975-09-11
JPS5442975A (en) * 1977-09-12 1979-04-05 Nippon Telegr & Teleph Corp <Ntt> Forming method of semiconductor electrode
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929068A (ja) * 1972-07-12 1974-03-15
JPS50116181A (ja) * 1974-02-26 1975-09-11
JPS5442975A (en) * 1977-09-12 1979-04-05 Nippon Telegr & Teleph Corp <Ntt> Forming method of semiconductor electrode
JPS558036A (en) * 1978-06-30 1980-01-21 Nec Corp Electrode formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03231424A (ja) * 1990-02-06 1991-10-15 Nec Corp 化合物半導体装置の製造方法

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