JPS577938A - Method for forming thin film pattern - Google Patents

Method for forming thin film pattern

Info

Publication number
JPS577938A
JPS577938A JP8238980A JP8238980A JPS577938A JP S577938 A JPS577938 A JP S577938A JP 8238980 A JP8238980 A JP 8238980A JP 8238980 A JP8238980 A JP 8238980A JP S577938 A JPS577938 A JP S577938A
Authority
JP
Japan
Prior art keywords
thin film
etching
laser light
deposited
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8238980A
Other languages
Japanese (ja)
Inventor
Kenichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8238980A priority Critical patent/JPS577938A/en
Publication of JPS577938A publication Critical patent/JPS577938A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To reduce the cost of a semiconductor device by immersing a substrate on the surface of which a thin film mask is deposited into etching liquid, irradiating laser light on the region to be removed by etching, etching out said regions, thereby performing patterning. CONSTITUTION:A resist film mask 3' is formed on a thin film 2 comprising Cr and CrxOy deposited on a transparent substrate 1, and the device is immersed in the etching liquid 5'. The laser light 6 is irradiated only on the region of the deposited thin film to be etched out. The etching speed at the region irradiated by the laser light becomes fast, and the removal by etching can be performed. In removing residual parts 4 of the thin film, the laser light 6 is irradiated in the etching liquid without applying a photoresist film, and the corrective removal can be readily accomplished. Thus, the cost of LSIs and the like can be reduced.
JP8238980A 1980-06-18 1980-06-18 Method for forming thin film pattern Pending JPS577938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238980A JPS577938A (en) 1980-06-18 1980-06-18 Method for forming thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238980A JPS577938A (en) 1980-06-18 1980-06-18 Method for forming thin film pattern

Publications (1)

Publication Number Publication Date
JPS577938A true JPS577938A (en) 1982-01-16

Family

ID=13773214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238980A Pending JPS577938A (en) 1980-06-18 1980-06-18 Method for forming thin film pattern

Country Status (1)

Country Link
JP (1) JPS577938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100213174A1 (en) * 2007-10-01 2010-08-26 Bu-Gon Shin Method for Manufacturing Glass Cliche Using Laser Etching and Apparatus For Laser Irradiation Therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438770A (en) * 1977-09-01 1979-03-23 Mitsubishi Electric Corp Etching device
JPS5459879A (en) * 1977-10-20 1979-05-14 Mitsubishi Electric Corp Selective etching method
JPS55148771A (en) * 1979-05-08 1980-11-19 Ibm Chemical etching method of worked article surface

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438770A (en) * 1977-09-01 1979-03-23 Mitsubishi Electric Corp Etching device
JPS5459879A (en) * 1977-10-20 1979-05-14 Mitsubishi Electric Corp Selective etching method
JPS55148771A (en) * 1979-05-08 1980-11-19 Ibm Chemical etching method of worked article surface

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100213174A1 (en) * 2007-10-01 2010-08-26 Bu-Gon Shin Method for Manufacturing Glass Cliche Using Laser Etching and Apparatus For Laser Irradiation Therefor
TWI394728B (en) * 2007-10-01 2013-05-01 Lg Chemical Ltd Method for manufacturing glass cliche using laser etching and apparatus for laser irradiation therefor
US8845916B2 (en) * 2007-10-01 2014-09-30 Lg Chem, Ltd. Method for manufacturing glass cliche using laser etching and apparatus for laser irradiation therefor
US10364179B2 (en) 2007-10-01 2019-07-30 Lg Chem, Ltd. Method for manufacturing glass cliche using laser etching and apparatus for laser irradiation therefor

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