JPS577931A - Method for measuring gap - Google Patents

Method for measuring gap

Info

Publication number
JPS577931A
JPS577931A JP8241080A JP8241080A JPS577931A JP S577931 A JPS577931 A JP S577931A JP 8241080 A JP8241080 A JP 8241080A JP 8241080 A JP8241080 A JP 8241080A JP S577931 A JPS577931 A JP S577931A
Authority
JP
Japan
Prior art keywords
mask
wafer
picture pattern
distance
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8241080A
Other languages
Japanese (ja)
Inventor
Tadao Hirakawa
Ryohei Yokoyama
Sachiosa Moriwaki
Tetsuo Aikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8241080A priority Critical patent/JPS577931A/en
Publication of JPS577931A publication Critical patent/JPS577931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable the gap confronting between a mask and a wafer to be measured precisely by arranging a contactless distance measuring device facing the mask, measuring the distance to the mask at the part where the picture pattern of the mask is formed and the distance to the wafer at the part where the picture pattern is not formed, respectively. CONSTITUTION:The wafer 2 is fixed and held on the top surface of a table 1 by vacuum sucking and the like. An exposing mask 11 is held over the table 1 by a holder 12. The mask 11 comprises a polymide film 13 on which the picture pattern 15 of Au and transparent part 16 are formed. The distance measuring device 17 is arranged over the mask. By using a sensor 17a, the distance l2 to the part 15 of the mask where the picture pattern is formed and the distance l1 to the wafer through the transparent part 16 of the mask where the picture pattern is not formed are measured. The opposing gap between the wafer and the mask is computed by l1-l2. In this method the opposing gap between the wafer and the mask can be measured without contact highly precisely, and the picture pattern of the mask can be copied on the wafer.
JP8241080A 1980-06-18 1980-06-18 Method for measuring gap Pending JPS577931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8241080A JPS577931A (en) 1980-06-18 1980-06-18 Method for measuring gap

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8241080A JPS577931A (en) 1980-06-18 1980-06-18 Method for measuring gap

Publications (1)

Publication Number Publication Date
JPS577931A true JPS577931A (en) 1982-01-16

Family

ID=13773811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8241080A Pending JPS577931A (en) 1980-06-18 1980-06-18 Method for measuring gap

Country Status (1)

Country Link
JP (1) JPS577931A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107515A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Gap control type exposure method
JPH01276640A (en) * 1988-04-28 1989-11-07 Fujitsu Ltd Alignment of wafer
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
CN103631098A (en) * 2013-12-23 2014-03-12 成都虹博宇光电科技有限公司 Photo-etching machine and non-contact type leveling and focusing system and method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107515A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Gap control type exposure method
JPH0454963B2 (en) * 1982-12-13 1992-09-01 Hitachi Ltd
JPH01276640A (en) * 1988-04-28 1989-11-07 Fujitsu Ltd Alignment of wafer
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
CN103631098A (en) * 2013-12-23 2014-03-12 成都虹博宇光电科技有限公司 Photo-etching machine and non-contact type leveling and focusing system and method thereof
CN103631098B (en) * 2013-12-23 2016-08-17 成都虹博宇光电科技有限公司 A kind of contactless photoetching machine leveling and focusing system, method and litho machine

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