JPS5778188A - Josephson integrated circuit - Google Patents
Josephson integrated circuitInfo
- Publication number
- JPS5778188A JPS5778188A JP55154831A JP15483180A JPS5778188A JP S5778188 A JPS5778188 A JP S5778188A JP 55154831 A JP55154831 A JP 55154831A JP 15483180 A JP15483180 A JP 15483180A JP S5778188 A JPS5778188 A JP S5778188A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- superconductor
- uppermost
- lead alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To obtain a Josephson integrated circuit having preferable characteristics by covering all lead alloy superconductor layers except the uppermost lead alloy superconductor layer with insulator layers prior to the formation of the uppermost superconductor layer, thereby employing highly accurate etching method in the patterning of the uppermost layer required for the minimum line width. CONSTITUTION:Insulator layers 33, 35, 38 and lead alloy superconductor layers 34, 36, 39 are arranged on a superconductor ground surface 32 formed on a substrate 31, and an oxidized film barrier 37 is interposed between the layers 34 and 36 to form a Josephson integrated circuit. Such multilayer structure can be obtined by forming in sequence of insulator layer, lead alloy superconductor layers, oxidized barrier 33, 34, 35, 37, 36, 38, 39, and the layers 34, 36 formed prior to the formation o f the uppermost layer 39 are completely covered by the layers 35, 38 or the uppermost layer 39. Thereafter, the layer 39 is etched with a photoresist film as a mask, and the element having the minimum line width of 1mum or less can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55154831A JPS5778188A (en) | 1980-11-04 | 1980-11-04 | Josephson integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55154831A JPS5778188A (en) | 1980-11-04 | 1980-11-04 | Josephson integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5778188A true JPS5778188A (en) | 1982-05-15 |
Family
ID=15592824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55154831A Pending JPS5778188A (en) | 1980-11-04 | 1980-11-04 | Josephson integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5778188A (en) |
-
1980
- 1980-11-04 JP JP55154831A patent/JPS5778188A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5477081A (en) | Semiconductor device and production of the same | |
JPS6467945A (en) | Wiring layer formed on buried dielectric and manufacture thereof | |
JPS5778188A (en) | Josephson integrated circuit | |
JPS5350986A (en) | Josephson integrated circuit by multilayer structure | |
JPS5710926A (en) | Manufacture of semiconductor device | |
JPS55102235A (en) | Formation of interlayer conductive layer | |
JPS57145327A (en) | Manufacture of semiconductor device | |
JPS5553441A (en) | Semiconductor device | |
JPS5568655A (en) | Manufacturing method of wiring | |
JPS5768005A (en) | Inductance for josephson integrated circuit | |
JPS6464237A (en) | Forming method for multilayered interconnection in semiconductor device | |
JPS6420677A (en) | Manufacture of josephson junction | |
JPS56161656A (en) | Manufacture of semiconductor device | |
JPS5368970A (en) | Solder electrode structure | |
JPS5789239A (en) | Semiconductor integrated circuit | |
JPS5649541A (en) | Multilayer wiring structure for integrated circuit | |
JPS5732654A (en) | Semiconductor integrated circuit device | |
JPS5693342A (en) | Formation of multilayer interconnection structure | |
JPS57208160A (en) | Semiconductor device | |
JPS5491068A (en) | Manufacture of semiconductor device | |
JPS5696845A (en) | Manufacture of semiconductor device | |
JPS5368184A (en) | Formation method of multilayer wiring structure | |
JPS5648151A (en) | Wiring formation of semiconductor device | |
JPS56130951A (en) | Manufacture of semiconductor device | |
JPS57147253A (en) | Manufacture of semiconductor device |