JPS577166A - Amorphous thin solar cell - Google Patents

Amorphous thin solar cell

Info

Publication number
JPS577166A
JPS577166A JP8117780A JP8117780A JPS577166A JP S577166 A JPS577166 A JP S577166A JP 8117780 A JP8117780 A JP 8117780A JP 8117780 A JP8117780 A JP 8117780A JP S577166 A JPS577166 A JP S577166A
Authority
JP
Japan
Prior art keywords
amorphous
layer
light
short wavelength
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8117780A
Other languages
English (en)
Inventor
Setsuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8117780A priority Critical patent/JPS577166A/ja
Publication of JPS577166A publication Critical patent/JPS577166A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP8117780A 1980-06-16 1980-06-16 Amorphous thin solar cell Pending JPS577166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8117780A JPS577166A (en) 1980-06-16 1980-06-16 Amorphous thin solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8117780A JPS577166A (en) 1980-06-16 1980-06-16 Amorphous thin solar cell

Publications (1)

Publication Number Publication Date
JPS577166A true JPS577166A (en) 1982-01-14

Family

ID=13739176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8117780A Pending JPS577166A (en) 1980-06-16 1980-06-16 Amorphous thin solar cell

Country Status (1)

Country Link
JP (1) JPS577166A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128778A (ja) * 1982-01-28 1983-08-01 Seiko Epson Corp 半導体装置
JPS58122671U (ja) * 1982-02-16 1983-08-20 セイレイ工業株式会社 小型管理機の移動用車輪
JPS58161380A (ja) * 1982-03-19 1983-09-24 Semiconductor Energy Lab Co Ltd 半導体装置
JPS60100485A (ja) * 1983-10-06 1985-06-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− 半導体装置
JPS60250681A (ja) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 無秩序性多層半導体構造体
JPS617661A (ja) * 1984-06-21 1986-01-14 Fuji Xerox Co Ltd 光電変換素子およびこれを利用したカラ−原稿読み取り素子
JPS6248928A (ja) * 1985-06-07 1987-03-03 エレクトリツク　パワ−　リサ−チ　インスチテユ−ト　インコ−ポレ−テツド 光電池デバイス
US8119904B2 (en) 2009-07-31 2012-02-21 International Business Machines Corporation Silicon wafer based structure for heterostructure solar cells
JPWO2011135975A1 (ja) * 2010-04-27 2013-07-18 日本電気株式会社 ＳｉＧｅ積層薄膜それを用いた赤外線センサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5084189A (ja) * 1973-11-26 1975-07-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5084189A (ja) * 1973-11-26 1975-07-07

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128778A (ja) * 1982-01-28 1983-08-01 Seiko Epson Corp 半導体装置
JPS58122671U (ja) * 1982-02-16 1983-08-20 セイレイ工業株式会社 小型管理機の移動用車輪
JPS58161380A (ja) * 1982-03-19 1983-09-24 Semiconductor Energy Lab Co Ltd 半導体装置
JPS60100485A (ja) * 1983-10-06 1985-06-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− 半導体装置
JPS60250681A (ja) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 無秩序性多層半導体構造体
JPS617661A (ja) * 1984-06-21 1986-01-14 Fuji Xerox Co Ltd 光電変換素子およびこれを利用したカラ−原稿読み取り素子
JPS6248928A (ja) * 1985-06-07 1987-03-03 エレクトリツク　パワ−　リサ−チ　インスチテユ−ト　インコ−ポレ−テツド 光電池デバイス
US8119904B2 (en) 2009-07-31 2012-02-21 International Business Machines Corporation Silicon wafer based structure for heterostructure solar cells
US9496140B2 (en) 2009-07-31 2016-11-15 Globalfoundries Inc. Silicon wafer based structure for heterostructure solar cells
JPWO2011135975A1 (ja) * 2010-04-27 2013-07-18 日本電気株式会社 ＳｉＧｅ積層薄膜それを用いた赤外線センサ

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