JPS5771126A - Semiamorhous semiconductor - Google Patents
Semiamorhous semiconductorInfo
- Publication number
- JPS5771126A JPS5771126A JP55147303A JP14730380A JPS5771126A JP S5771126 A JPS5771126 A JP S5771126A JP 55147303 A JP55147303 A JP 55147303A JP 14730380 A JP14730380 A JP 14730380A JP S5771126 A JPS5771126 A JP S5771126A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- silicon
- mass
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 230000003472 neutralizing effect Effects 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147303A JPS5771126A (en) | 1980-10-21 | 1980-10-21 | Semiamorhous semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147303A JPS5771126A (en) | 1980-10-21 | 1980-10-21 | Semiamorhous semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5771126A true JPS5771126A (en) | 1982-05-01 |
| JPH0253941B2 JPH0253941B2 (enrdf_load_stackoverflow) | 1990-11-20 |
Family
ID=15427141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55147303A Granted JPS5771126A (en) | 1980-10-21 | 1980-10-21 | Semiamorhous semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771126A (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61180480A (ja) * | 1984-10-02 | 1986-08-13 | イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ | バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法 |
| US7998801B2 (en) | 2008-04-25 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor having altered semiconductor layer |
| US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
| US8119468B2 (en) | 2008-04-18 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| US8138032B2 (en) | 2008-04-18 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor having microcrystalline semiconductor film |
| US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8304775B2 (en) | 2009-03-09 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
| US8525170B2 (en) | 2008-04-18 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| US8546810B2 (en) | 2009-05-28 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device, and electronic appliance |
| US8569120B2 (en) | 2008-11-17 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor |
| US8624254B2 (en) | 2010-09-14 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8637866B2 (en) | 2008-06-27 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7738050B2 (en) | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| JP5216446B2 (ja) | 2007-07-27 | 2013-06-19 | 株式会社半導体エネルギー研究所 | プラズマｃｖｄ装置及び表示装置の作製方法 |
| JP5058084B2 (ja) * | 2007-07-27 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置 |
| JP5572307B2 (ja) | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| US7888167B2 (en) | 2008-04-25 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US9018109B2 (en) | 2009-03-10 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including silicon nitride layer and manufacturing method thereof |
| JP5709579B2 (ja) | 2010-03-02 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 微結晶半導体膜の作製方法 |
-
1980
- 1980-10-21 JP JP55147303A patent/JPS5771126A/ja active Granted
Non-Patent Citations (3)
| Title |
|---|
| APPL.PHYS.LETT=1980 * |
| J.NON-CRYST.SOLIED=1979 * |
| JAPAN.J.APPL.PHYS=1980 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61180480A (ja) * | 1984-10-02 | 1986-08-13 | イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ | バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法 |
| US8119468B2 (en) | 2008-04-18 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| US8138032B2 (en) | 2008-04-18 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor having microcrystalline semiconductor film |
| US8525170B2 (en) | 2008-04-18 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
| US7998801B2 (en) | 2008-04-25 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor having altered semiconductor layer |
| US8637866B2 (en) | 2008-06-27 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8569120B2 (en) | 2008-11-17 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor |
| US8304775B2 (en) | 2009-03-09 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8604481B2 (en) | 2009-03-09 | 2013-12-10 | Semiconductor Energy Co., Ltd. | Thin film transistor |
| US8546810B2 (en) | 2009-05-28 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device, and electronic appliance |
| US8624254B2 (en) | 2010-09-14 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0253941B2 (enrdf_load_stackoverflow) | 1990-11-20 |
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