JPS5769791A - Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof - Google Patents

Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof

Info

Publication number
JPS5769791A
JPS5769791A JP14520580A JP14520580A JPS5769791A JP S5769791 A JPS5769791 A JP S5769791A JP 14520580 A JP14520580 A JP 14520580A JP 14520580 A JP14520580 A JP 14520580A JP S5769791 A JPS5769791 A JP S5769791A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
radiation angle
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14520580A
Other languages
English (en)
Other versions
JPS6210038B2 (ja
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14520580A priority Critical patent/JPS5769791A/ja
Publication of JPS5769791A publication Critical patent/JPS5769791A/ja
Publication of JPS6210038B2 publication Critical patent/JPS6210038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP14520580A 1980-10-17 1980-10-17 Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof Granted JPS5769791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14520580A JPS5769791A (en) 1980-10-17 1980-10-17 Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14520580A JPS5769791A (en) 1980-10-17 1980-10-17 Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5769791A true JPS5769791A (en) 1982-04-28
JPS6210038B2 JPS6210038B2 (ja) 1987-03-04

Family

ID=15379825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14520580A Granted JPS5769791A (en) 1980-10-17 1980-10-17 Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5769791A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201686A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体レ−ザ
EP0192450A2 (en) * 1985-02-19 1986-08-27 Sharp Kabushiki Kaisha A method for the production of semiconductor laser devices
EP0205307A2 (en) * 1985-06-10 1986-12-17 Sharp Kabushiki Kaisha Semiconductor laser device
EP0212977A2 (en) * 1985-08-21 1987-03-04 Sharp Kabushiki Kaisha A buried type semiconductor laser device
EP1168541A2 (en) * 2000-06-23 2002-01-02 Agere Systems Optoelectronics Guardian Corporation High power single mode laser and method of fabrication

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201686A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体レ−ザ
EP0192450A2 (en) * 1985-02-19 1986-08-27 Sharp Kabushiki Kaisha A method for the production of semiconductor laser devices
US4799227A (en) * 1985-02-19 1989-01-17 Sharp Kabushiki Kaisha Semiconductor laser device having a buried heterostructure
EP0205307A2 (en) * 1985-06-10 1986-12-17 Sharp Kabushiki Kaisha Semiconductor laser device
EP0212977A2 (en) * 1985-08-21 1987-03-04 Sharp Kabushiki Kaisha A buried type semiconductor laser device
EP1168541A2 (en) * 2000-06-23 2002-01-02 Agere Systems Optoelectronics Guardian Corporation High power single mode laser and method of fabrication
EP1168541A3 (en) * 2000-06-23 2003-03-26 Agere Systems Optoelectronics Guardian Corporation High power single mode laser and method of fabrication

Also Published As

Publication number Publication date
JPS6210038B2 (ja) 1987-03-04

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