JPS5670682A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5670682A
JPS5670682A JP14905979A JP14905979A JPS5670682A JP S5670682 A JPS5670682 A JP S5670682A JP 14905979 A JP14905979 A JP 14905979A JP 14905979 A JP14905979 A JP 14905979A JP S5670682 A JPS5670682 A JP S5670682A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
ingaasp
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14905979A
Other languages
Japanese (ja)
Other versions
JPS5925398B2 (en
Inventor
Toshio Murotani
Jun Ishii
Etsuji Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14905979A priority Critical patent/JPS5925398B2/en
Publication of JPS5670682A publication Critical patent/JPS5670682A/en
Publication of JPS5925398B2 publication Critical patent/JPS5925398B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the laser which has a flat surface, excellently radiates heat, ensures threshold value currents and has a superior temperature characteristic by combining specified processes such as mesa etching, melt back, and diffusion of a dopant. CONSTITUTION:An N type InGaAsP layer 2, a P type InP layer 3 and an InGaAsP layer 4 are grown on an N type InP substrate 1, a resist film 14 is formed along the laser-ray propagating direction in a striped shape, mesa etching is conducted up to depth reaching the N type InGaAsP layer 2, and both flanks along the laser-ray propagating direction is made up. The P type InP layer 3 and the N type InGaAsP layer 2 are left by metl-back from the surface, and a P type InP layer 5, an N type InP layer 6 and an InGaAsP layer 7 are grown on the layers 2, 3. A P type dopant (Cd, Zn, etc.) is diffused up to depth 10 reaching the P type InP layer 3 at the top of a stripe from a surface of the IGaAsP layer 7, and a P type layer 8 and P a type InGaAsP layer 9 are built up.
JP14905979A 1979-11-14 1979-11-14 Manufacturing method of semiconductor laser Expired JPS5925398B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14905979A JPS5925398B2 (en) 1979-11-14 1979-11-14 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14905979A JPS5925398B2 (en) 1979-11-14 1979-11-14 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5670682A true JPS5670682A (en) 1981-06-12
JPS5925398B2 JPS5925398B2 (en) 1984-06-16

Family

ID=15466763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14905979A Expired JPS5925398B2 (en) 1979-11-14 1979-11-14 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5925398B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152290A (en) * 1980-03-31 1981-11-25 Western Electric Co Method of manufacturing mesa device from semiconductor body
US4536940A (en) * 1981-06-12 1985-08-27 At&T Bell Laboratories Method of making a loss stabilized buried heterostructure laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152290A (en) * 1980-03-31 1981-11-25 Western Electric Co Method of manufacturing mesa device from semiconductor body
JPH0152913B2 (en) * 1980-03-31 1989-11-10 Ei Teii Ando Teii Tekunorojiizu Inc
US4536940A (en) * 1981-06-12 1985-08-27 At&T Bell Laboratories Method of making a loss stabilized buried heterostructure laser

Also Published As

Publication number Publication date
JPS5925398B2 (en) 1984-06-16

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