JPS5768032A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5768032A JPS5768032A JP55144670A JP14467080A JPS5768032A JP S5768032 A JPS5768032 A JP S5768032A JP 55144670 A JP55144670 A JP 55144670A JP 14467080 A JP14467080 A JP 14467080A JP S5768032 A JPS5768032 A JP S5768032A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pattern
- mask
- film
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
PURPOSE:To reduce the malfunction of a pattern due to improper contact of a wafer to a photomask by coating photosensitizer on the wafer bent in a projection on the surface superposing a mask for forming the pattern on the projected surface and thereafter printing the pattern thereon. CONSTITUTION:A semiconductor wafer 21 to be printed in a pattern is interposed between a die 22a having a recessed surface on the lower surface and a die 22b having a projection on the upper surface, and pressures Pa, Pb are applied from above and below to deflect the wafer 21 upwardly by 10-100mum. Then, a silicon oxidized film 23 is coated on the projected surface of a wafer 21 thus bent, a photosensitizer film 24 is covered thereon, the wafer 25 thus formed is introduced into N2 atmosphere, and is secured to a chuck 26 under vacuum pressure Vac. Further, a photomask 27 is urged to the wafer 25 by a clamp 28. And is exposed with ultraviolet UV. In this manner, the pressurizing force of the wafer 25 to the mask 27 becomes strong at the center, and weak at the periphery, and the evaporated gas in the film 24 is exhausted at the periphery, and the wafer 25 is preferably contacted with the mask 27.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55144670A JPS5768032A (en) | 1980-10-16 | 1980-10-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55144670A JPS5768032A (en) | 1980-10-16 | 1980-10-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5768032A true JPS5768032A (en) | 1982-04-26 |
Family
ID=15367497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55144670A Pending JPS5768032A (en) | 1980-10-16 | 1980-10-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5768032A (en) |
-
1980
- 1980-10-16 JP JP55144670A patent/JPS5768032A/en active Pending
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