JPS576494A - Unvolatile semiconductor memory - Google Patents

Unvolatile semiconductor memory

Info

Publication number
JPS576494A
JPS576494A JP8108180A JP8108180A JPS576494A JP S576494 A JPS576494 A JP S576494A JP 8108180 A JP8108180 A JP 8108180A JP 8108180 A JP8108180 A JP 8108180A JP S576494 A JPS576494 A JP S576494A
Authority
JP
Japan
Prior art keywords
substrate
negative voltage
self
signal
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8108180A
Other languages
Japanese (ja)
Other versions
JPS615237B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8108180A priority Critical patent/JPS576494A/en
Publication of JPS576494A publication Critical patent/JPS576494A/en
Publication of JPS615237B2 publication Critical patent/JPS615237B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To elevate a memory read out speed and also to minify a transistor constituting an integrated circuit, by applying a negative potential to a substrate when writing-in a data, so that a self-substrate bias circuit can be provided. CONSTITUTION:Negative voltage is applied to a substrate through a substrate terminal K from a self-substrate bias circuit 11. When writing-in a data of a memory cell, a negative voltage generating circuit 12 makes a signal PGM ''1'', and applys the negative voltage to a chip select terminal CE bar. Said negative voltage is applied to a substrate through a diode 13. On the other hand, a signal which has branched from the terminal CE bar is waveform-shaped by inverters 14-16, outputs a write-in control signal A, and outputs a chip select signal B through inverters 17-19 in the same way. In this way, since the self-bias circuit 11 can be provided, a memory readout speed is elevated, and also a transistor constituting an integrated circuit can be minified.
JP8108180A 1980-06-16 1980-06-16 Unvolatile semiconductor memory Granted JPS576494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8108180A JPS576494A (en) 1980-06-16 1980-06-16 Unvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8108180A JPS576494A (en) 1980-06-16 1980-06-16 Unvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS576494A true JPS576494A (en) 1982-01-13
JPS615237B2 JPS615237B2 (en) 1986-02-17

Family

ID=13736431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8108180A Granted JPS576494A (en) 1980-06-16 1980-06-16 Unvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS576494A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58196362A (en) * 1982-05-10 1983-11-15 Toyota Motor Corp Cast iron cam shaft and manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111339U (en) * 1987-01-13 1988-07-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58196362A (en) * 1982-05-10 1983-11-15 Toyota Motor Corp Cast iron cam shaft and manufacture

Also Published As

Publication number Publication date
JPS615237B2 (en) 1986-02-17

Similar Documents

Publication Publication Date Title
ATE71762T1 (en) DISK AREA CIRCUIT MEMORY.
JPS5342633A (en) Voltage sense circuit of semiconductor memory device
KR900010791A (en) Nonvolatile Semiconductor Memory System
DE3177149D1 (en) READING CIRCUIT FOR A MONOLITHICALLY INTEGRATED SEMICONDUCTOR MEMORY.
KR880000973A (en) Semiconductor memory device with write-in operation prevention function
KR920003656A (en) Integrated circuit
JPS576494A (en) Unvolatile semiconductor memory
JPS5517869A (en) Semiconductor memory device
JPS5733493A (en) Semiconductor storage device
JPS5577088A (en) Nonvolatile semiconductor memory unit
JPS55101185A (en) Semiconductor memory device
JPS5766589A (en) Semiconductor storage element
JPS54106134A (en) Data protection circuit for semiconductor memory device
JPS5423337A (en) Semiconductor memory unit
GB2021825A (en) Improvements in or relating to semi conductor circuits
JPS5364434A (en) Sense circuit of mos semiconductor memory
JPS5564699A (en) Semiconductor integrated-circuit memory
JPS52122090A (en) Semiconductor integrated circuit device
JPS56156992A (en) Driving circuit for semiconductor storage device
JPS56143588A (en) Semiconductor storage device
JPS55160393A (en) Read voltage setting system for semiconductor memory
JPS57133585A (en) Storage device
JPS5656663A (en) Semiconductor device
JPS52104078A (en) Semiconductor unit
JPS5730190A (en) Semiconductor storage device