JPS576494A - Unvolatile semiconductor memory - Google Patents
Unvolatile semiconductor memoryInfo
- Publication number
- JPS576494A JPS576494A JP8108180A JP8108180A JPS576494A JP S576494 A JPS576494 A JP S576494A JP 8108180 A JP8108180 A JP 8108180A JP 8108180 A JP8108180 A JP 8108180A JP S576494 A JPS576494 A JP S576494A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- negative voltage
- self
- signal
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To elevate a memory read out speed and also to minify a transistor constituting an integrated circuit, by applying a negative potential to a substrate when writing-in a data, so that a self-substrate bias circuit can be provided. CONSTITUTION:Negative voltage is applied to a substrate through a substrate terminal K from a self-substrate bias circuit 11. When writing-in a data of a memory cell, a negative voltage generating circuit 12 makes a signal PGM ''1'', and applys the negative voltage to a chip select terminal CE bar. Said negative voltage is applied to a substrate through a diode 13. On the other hand, a signal which has branched from the terminal CE bar is waveform-shaped by inverters 14-16, outputs a write-in control signal A, and outputs a chip select signal B through inverters 17-19 in the same way. In this way, since the self-bias circuit 11 can be provided, a memory readout speed is elevated, and also a transistor constituting an integrated circuit can be minified.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8108180A JPS576494A (en) | 1980-06-16 | 1980-06-16 | Unvolatile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8108180A JPS576494A (en) | 1980-06-16 | 1980-06-16 | Unvolatile semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS576494A true JPS576494A (en) | 1982-01-13 |
JPS615237B2 JPS615237B2 (en) | 1986-02-17 |
Family
ID=13736431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8108180A Granted JPS576494A (en) | 1980-06-16 | 1980-06-16 | Unvolatile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS576494A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58196362A (en) * | 1982-05-10 | 1983-11-15 | Toyota Motor Corp | Cast iron cam shaft and manufacture |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63111339U (en) * | 1987-01-13 | 1988-07-18 |
-
1980
- 1980-06-16 JP JP8108180A patent/JPS576494A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58196362A (en) * | 1982-05-10 | 1983-11-15 | Toyota Motor Corp | Cast iron cam shaft and manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS615237B2 (en) | 1986-02-17 |
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