JPS5730190A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5730190A
JPS5730190A JP10487580A JP10487580A JPS5730190A JP S5730190 A JPS5730190 A JP S5730190A JP 10487580 A JP10487580 A JP 10487580A JP 10487580 A JP10487580 A JP 10487580A JP S5730190 A JPS5730190 A JP S5730190A
Authority
JP
Japan
Prior art keywords
reading
word line
potentials
writing
trs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10487580A
Other languages
Japanese (ja)
Other versions
JPS6236308B2 (en
Inventor
Kazuhiro Toyoda
Haruo Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10487580A priority Critical patent/JPS5730190A/en
Publication of JPS5730190A publication Critical patent/JPS5730190A/en
Publication of JPS6236308B2 publication Critical patent/JPS6236308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To prevent the destruction of the contents of a cell due to the delay of decay of a word line potential in transition from writing operation to reading operation, by setting a selected word line potential in writing operation higher than that in reading operation. CONSTITUTION:A couple of driving transistors (TR) T3 and T4 for static memory cells MC0-MCn connected to the intersections of a word line W<+>, and bit lines B0 and B1 are provided with detection TRs T1 and T2 constituting a current switch through bit lines B0 and B1. Further, a delaying means DLY of delaying variations of read levels of base potentials VD0-VD1 of the TRs T1 and T2 in transition from writing to reading behind switching from reading potentials of word lines W0<+> and W<+> to reading potentials is provided.
JP10487580A 1980-07-30 1980-07-30 Semiconductor storage device Granted JPS5730190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10487580A JPS5730190A (en) 1980-07-30 1980-07-30 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10487580A JPS5730190A (en) 1980-07-30 1980-07-30 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5730190A true JPS5730190A (en) 1982-02-18
JPS6236308B2 JPS6236308B2 (en) 1987-08-06

Family

ID=14392373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10487580A Granted JPS5730190A (en) 1980-07-30 1980-07-30 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5730190A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124089A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage circuit
US6442072B2 (en) * 1999-12-21 2002-08-27 Stmicroelectronics S.R.L. Row selection circuit for fast memory devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124089A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor storage circuit
US6442072B2 (en) * 1999-12-21 2002-08-27 Stmicroelectronics S.R.L. Row selection circuit for fast memory devices

Also Published As

Publication number Publication date
JPS6236308B2 (en) 1987-08-06

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