JPS5760073A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5760073A
JPS5760073A JP13454180A JP13454180A JPS5760073A JP S5760073 A JPS5760073 A JP S5760073A JP 13454180 A JP13454180 A JP 13454180A JP 13454180 A JP13454180 A JP 13454180A JP S5760073 A JPS5760073 A JP S5760073A
Authority
JP
Japan
Prior art keywords
etched
plasma
sio
electrodes
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13454180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248759B2 (en, 2012
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13454180A priority Critical patent/JPS5760073A/ja
Publication of JPS5760073A publication Critical patent/JPS5760073A/ja
Publication of JPS6248759B2 publication Critical patent/JPS6248759B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP13454180A 1980-09-27 1980-09-27 Plasma etching method Granted JPS5760073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13454180A JPS5760073A (en) 1980-09-27 1980-09-27 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13454180A JPS5760073A (en) 1980-09-27 1980-09-27 Plasma etching method

Publications (2)

Publication Number Publication Date
JPS5760073A true JPS5760073A (en) 1982-04-10
JPS6248759B2 JPS6248759B2 (en, 2012) 1987-10-15

Family

ID=15130722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13454180A Granted JPS5760073A (en) 1980-09-27 1980-09-27 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5760073A (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104331A3 (en) * 1982-07-06 1985-05-15 The Perkin-Elmer Corporation Controllable dry etching technique, and apparatus
JPS61292916A (ja) * 1985-06-21 1986-12-23 Nippon Gakki Seizo Kk コンタクト孔形成法
US4710266A (en) * 1983-08-09 1987-12-01 Ebara Corporation Apparatus for subjecting a radioactive sodium borate waste solution to volume reduction and solidification
JPH06333849A (ja) * 1993-05-19 1994-12-02 Tokyo Electron Ltd プラズマ処理装置
JP2013538284A (ja) * 2010-07-02 2013-10-10 アプライド マテリアルズ インコーポレイテッド 堆積装置および堆積の非対称性を低減させる方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0447262U (en, 2012) * 1990-08-29 1992-04-22

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104331A3 (en) * 1982-07-06 1985-05-15 The Perkin-Elmer Corporation Controllable dry etching technique, and apparatus
US4710266A (en) * 1983-08-09 1987-12-01 Ebara Corporation Apparatus for subjecting a radioactive sodium borate waste solution to volume reduction and solidification
US4725383A (en) * 1983-08-09 1988-02-16 Ebara Corporation Process for volume reduction and solidification of a radioactive sodium borate waste solution
JPS61292916A (ja) * 1985-06-21 1986-12-23 Nippon Gakki Seizo Kk コンタクト孔形成法
JPH06333849A (ja) * 1993-05-19 1994-12-02 Tokyo Electron Ltd プラズマ処理装置
JP2013538284A (ja) * 2010-07-02 2013-10-10 アプライド マテリアルズ インコーポレイテッド 堆積装置および堆積の非対称性を低減させる方法
US9580796B2 (en) 2010-07-02 2017-02-28 Applied Materials, Inc. Deposition apparatus and methods to reduce deposition asymmetry

Also Published As

Publication number Publication date
JPS6248759B2 (en, 2012) 1987-10-15

Similar Documents

Publication Publication Date Title
JPS57131374A (en) Plasma etching device
EP0123813A3 (en) Dry etching method for organic material layers
JPS5751265A (en) Microwave plasma etching device
KR880005840A (ko) 플라즈마 처리방법 및 장치
EP0327406A3 (en) Plasma processing method and apparatus for the deposition of thin films
JPS5531154A (en) Plasma etching apparatus
EP0641150A4 (en) TREATMENT DEVICE.
JPS5760073A (en) Plasma etching method
JPS5687670A (en) Dry etching apparatus
JPS57210631A (en) Reactive type ion etching method
JPS56105480A (en) Plasma etching method
JPS5647572A (en) Etching method of indium oxide film
JPS5681678A (en) Method and apparatus for plasma etching
JPS57131373A (en) Plasma etching device
JPS5689835A (en) Vapor phase growth apparatus
JPS57181376A (en) Dry etching device
JP3577785B2 (ja) イオンビーム発生装置
JPS577129A (en) Treating method and device for sputtering
JPS5635775A (en) Ion beam etching method
JPS57181377A (en) Dry etching device
JPS56100422A (en) Plasma etching method
JPH03123022A (ja) プラズマ成膜装置
JPS57196520A (en) Rinsing method for epitaxial growing apparatus
JP2901623B2 (ja) プラズマ洗浄方法
JPH01218024A (ja) ドライエッチング装置