JPS5759673B2 - - Google Patents
Info
- Publication number
- JPS5759673B2 JPS5759673B2 JP53146058A JP14605878A JPS5759673B2 JP S5759673 B2 JPS5759673 B2 JP S5759673B2 JP 53146058 A JP53146058 A JP 53146058A JP 14605878 A JP14605878 A JP 14605878A JP S5759673 B2 JPS5759673 B2 JP S5759673B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14605878A JPS5574168A (en) | 1978-11-28 | 1978-11-28 | Pnpn switch |
| US06/096,165 US4244000A (en) | 1978-11-28 | 1979-11-20 | PNPN Semiconductor switches |
| FR7929177A FR2443172A1 (fr) | 1978-11-28 | 1979-11-27 | Commutateur a semi-conducteur pnpn |
| DE19792947669 DE2947669A1 (de) | 1978-11-28 | 1979-11-27 | Pnpn-halbleiterschalter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14605878A JPS5574168A (en) | 1978-11-28 | 1978-11-28 | Pnpn switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574168A JPS5574168A (en) | 1980-06-04 |
| JPS5759673B2 true JPS5759673B2 (ja) | 1982-12-15 |
Family
ID=15399124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14605878A Granted JPS5574168A (en) | 1978-11-28 | 1978-11-28 | Pnpn switch |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4244000A (ja) |
| JP (1) | JPS5574168A (ja) |
| DE (1) | DE2947669A1 (ja) |
| FR (1) | FR2443172A1 (ja) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
| SE430450B (sv) * | 1979-04-03 | 1983-11-14 | Asea Ab | Tvapoligt overstromsskydd for inkoppling i en stromforande ledning |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| US4489340A (en) * | 1980-02-04 | 1984-12-18 | Nippon Telegraph & Telephone Public Corporation | PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions |
| DE3018499A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
| DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
| DE3019883A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Zweirichtungsthyristor |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| DE3112940A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb |
| DE3112942A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor und verfahren zu seinem betrieb |
| DE3112941A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb |
| DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| DE3118318A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb |
| DE3118293A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb |
| DE3118364A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit optoelektronisch angesteuerten emitterkurzschluessen und verfahren zu seinem betrieb |
| JPS583285A (ja) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | 半導体集積回路の保護装置 |
| DE3131894A1 (de) * | 1981-08-12 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Zuendschaltung fuer einen leistungsthyristor |
| JPS5846678A (ja) * | 1981-09-14 | 1983-03-18 | Oki Electric Ind Co Ltd | Ｐｎｐｎ半導体スイツチ |
| DE3138763A1 (de) * | 1981-09-29 | 1983-06-30 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung |
| DE3138762A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung |
| WO1983002852A1 (en) * | 1982-02-09 | 1983-08-18 | Western Electric Co | Field-effect controlled bi-directional lateral thyristor |
| SE431381B (sv) * | 1982-06-03 | 1984-01-30 | Asea Ab | Tvapoligt overstromsskydd |
| DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
| US4489341A (en) * | 1982-09-27 | 1984-12-18 | Sprague Electric Company | Merged-transistor switch with extra P-type region |
| EP0107773B1 (en) * | 1982-10-04 | 1987-03-11 | General Electric Company | Thyristor with turn-off capability |
| FR2542148B1 (fr) * | 1983-03-01 | 1986-12-05 | Telemecanique Electrique | Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible |
| EP0110776A1 (fr) * | 1982-11-25 | 1984-06-13 | Telemecanique | Circuit de commande d'un dispositif à semi-conducteur sensible du type thyristor ou triac, avec impédance d'assistance à l'auto-allumage |
| IL70462A (en) * | 1982-12-21 | 1987-09-16 | Int Rectifier Corp | A.c.solid state relay circuit and thyristor structure |
| US4535251A (en) * | 1982-12-21 | 1985-08-13 | International Rectifier Corporation | A.C. Solid state relay circuit and structure |
| SE435436B (sv) * | 1983-02-16 | 1984-09-24 | Asea Ab | Tvapoligt overstromsskydd |
| US4604638A (en) * | 1983-05-17 | 1986-08-05 | Kabushiki Kaisha Toshiba | Five layer semiconductor device with separate insulated turn-on and turn-off gates |
| JPH0779159B2 (ja) * | 1984-03-22 | 1995-08-23 | 潤一 西澤 | 光トリガ・光クエンチ可能なサイリスタ装置 |
| EP0164106B1 (en) * | 1984-06-05 | 1989-09-13 | Kabushiki Kaisha Toshiba | Pnpn switch device |
| US4941029A (en) * | 1985-02-27 | 1990-07-10 | Westinghouse Electric Corp. | High resistance optical shield for visible sensors |
| JPS61285821A (ja) * | 1985-06-11 | 1986-12-16 | シ−メンス、アクチエンゲゼルシヤフト | 電子スイツチ |
| JPH0758776B2 (ja) * | 1986-08-22 | 1995-06-21 | 株式会社日立製作所 | 複合半導体装置 |
| US5036377A (en) * | 1988-08-03 | 1991-07-30 | Texas Instruments Incorporated | Triac array |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| US5446295A (en) * | 1993-08-23 | 1995-08-29 | Siemens Components, Inc. | Silicon controlled rectifier with a variable base-shunt resistant |
| WO1995015583A1 (en) * | 1993-12-03 | 1995-06-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Fast electrical complete turn-off optical device |
| TW359024B (en) * | 1996-05-28 | 1999-05-21 | Winbond Electronics Corp | Stage silicon control rectifier protection circuit and the structure |
| JP3352349B2 (ja) * | 1997-02-24 | 2002-12-03 | シャープ株式会社 | 双方向サイリスタ素子 |
| US6351020B1 (en) * | 1999-11-12 | 2002-02-26 | Motorola, Inc. | Linear capacitor structure in a CMOS process |
| FR2819102B1 (fr) * | 2000-12-29 | 2003-04-04 | St Microelectronics Sa | Commutateur electronique bidirectionnel bistable a commande par impulsions |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US7075520B2 (en) * | 2001-12-12 | 2006-07-11 | Zi Technology Corporation Ltd | Key press disambiguation using a keypad of multidirectional keys |
| US20040153963A1 (en) * | 2003-02-05 | 2004-08-05 | Simpson Todd G. | Information entry mechanism for small keypads |
| US20040153975A1 (en) * | 2003-02-05 | 2004-08-05 | Williams Roland E. | Text entry mechanism for small keypads |
| US7423298B2 (en) * | 2004-03-17 | 2008-09-09 | Sharp Kabushiki Kaisha | Bidirectional photothyristor chip, optical lighting coupler, and solid state relay |
| EP1774620B1 (en) | 2004-06-23 | 2014-10-01 | Peregrine Semiconductor Corporation | Integrated rf front end |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| JP5195186B2 (ja) * | 2008-09-05 | 2013-05-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9343568B2 (en) * | 2014-05-12 | 2016-05-17 | Macronix International Co., Ltd. | Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7003606A (ja) * | 1969-03-19 | 1970-09-22 | ||
| DE2040657C3 (de) * | 1970-08-17 | 1975-10-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen |
| GB1325108A (en) * | 1970-09-14 | 1973-08-01 | Matsushita Electric Ind Co Ltd | Solid state switch |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| GB1480201A (en) * | 1975-01-06 | 1977-07-20 | Ncr Co | Four zone semiconductor device |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS5943831B2 (ja) * | 1975-12-08 | 1984-10-24 | 株式会社日立製作所 | ハンドウタイシユウセキカイロ |
-
1978
- 1978-11-28 JP JP14605878A patent/JPS5574168A/ja active Granted
-
1979
- 1979-11-20 US US06/096,165 patent/US4244000A/en not_active Expired - Lifetime
- 1979-11-27 FR FR7929177A patent/FR2443172A1/fr active Granted
- 1979-11-27 DE DE19792947669 patent/DE2947669A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2947669A1 (de) | 1980-06-12 |
| US4244000A (en) | 1981-01-06 |
| JPS5574168A (en) | 1980-06-04 |
| FR2443172A1 (fr) | 1980-06-27 |
| FR2443172B1 (ja) | 1985-05-17 |
| DE2947669C2 (ja) | 1987-01-15 |