JPS5759330A - Silicon structure - Google Patents
Silicon structureInfo
- Publication number
- JPS5759330A JPS5759330A JP10716381A JP10716381A JPS5759330A JP S5759330 A JPS5759330 A JP S5759330A JP 10716381 A JP10716381 A JP 10716381A JP 10716381 A JP10716381 A JP 10716381A JP S5759330 A JPS5759330 A JP S5759330A
- Authority
- JP
- Japan
- Prior art keywords
- silicon structure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31707—Next to natural rubber
- Y10T428/3171—With natural rubber next to second layer of natural rubber
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19800105618 EP0048291B1 (de) | 1980-09-19 | 1980-09-19 | Struktur mit einem eine durchgehende Öffnung aufweisenden Siliciumkörper und Verfahren zu ihrer Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759330A true JPS5759330A (en) | 1982-04-09 |
Family
ID=8186802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10716381A Pending JPS5759330A (en) | 1980-09-19 | 1981-07-10 | Silicon structure |
Country Status (4)
Country | Link |
---|---|
US (1) | US4393127A (ja) |
EP (1) | EP0048291B1 (ja) |
JP (1) | JPS5759330A (ja) |
DE (1) | DE3070833D1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63255918A (ja) * | 1987-04-13 | 1988-10-24 | Nissin Electric Co Ltd | X線露光用マスクとその製造方法 |
JP2012060178A (ja) * | 2005-04-20 | 2012-03-22 | Carl Zeiss Smt Gmbh | 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3275447D1 (en) * | 1982-07-03 | 1987-03-19 | Ibm Deutschland | Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching |
JPS6195356A (ja) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | フオトマスクブランク |
JPS61116358A (ja) * | 1984-11-09 | 1986-06-03 | Mitsubishi Electric Corp | フオトマスク材料 |
JPS61173251A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスクの製造方法 |
JPS61273546A (ja) * | 1985-05-29 | 1986-12-03 | Mitsubishi Electric Corp | 金属シリサイドフオトマスクの製造方法 |
US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
EP0244246A3 (en) * | 1986-05-02 | 1990-03-21 | Hampshire Instruments, Inc | A method of making a dimensionally stable x-ray mask |
EP0244496B1 (de) * | 1986-05-06 | 1991-01-16 | Ibm Deutschland Gmbh | Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung |
US4862490A (en) * | 1986-10-23 | 1989-08-29 | Hewlett-Packard Company | Vacuum windows for soft x-ray machines |
US4870648A (en) * | 1987-08-07 | 1989-09-26 | The United States Department Of Energy | X-ray beamsplitter |
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
EP0344513A3 (de) * | 1988-05-31 | 1991-01-16 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer Steuerplatte für ein Lithographiegerät |
US4933557A (en) * | 1988-06-06 | 1990-06-12 | Brigham Young University | Radiation detector window structure and method of manufacturing thereof |
JPH02199099A (ja) * | 1988-10-21 | 1990-08-07 | Crystallume | 連続ダイヤモンド薄膜およびその製法 |
US5020083A (en) * | 1989-04-21 | 1991-05-28 | Lepton Inc. | X-ray masks, their fabrication and use |
US5273829A (en) * | 1991-10-08 | 1993-12-28 | International Business Machines Corporation | Epitaxial silicon membranes |
US5231654A (en) * | 1991-12-06 | 1993-07-27 | General Electric Company | Radiation imager collimator |
US6714625B1 (en) | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
JPH0677115A (ja) * | 1992-06-25 | 1994-03-18 | Seiko Epson Corp | フォトマスクおよび半導体装置の製造方法 |
JP2766174B2 (ja) * | 1993-12-28 | 1998-06-18 | 日本電気株式会社 | 電界放出冷陰極とこれを用いた電子管 |
JP2606127B2 (ja) * | 1994-04-22 | 1997-04-30 | 日本電気株式会社 | 電子線による描画方法および描画装置 |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US6355381B1 (en) | 1998-09-25 | 2002-03-12 | Intel Corporation | Method to fabricate extreme ultraviolet lithography masks |
US6157703A (en) * | 1998-10-06 | 2000-12-05 | Cardiac Mariners, Inc. | Beam hardening filter for x-ray source |
US6118854A (en) * | 1998-10-06 | 2000-09-12 | Cardiac Mariners, Inc. | Method of making x-ray beam hardening filter and assembly |
WO2000021096A1 (en) * | 1998-10-06 | 2000-04-13 | Cardiac Mariners, Inc. | Beam hardening filter for x-ray source |
US6756158B2 (en) * | 2001-06-30 | 2004-06-29 | Intel Corporation | Thermal generation of mask pattern |
DE10137834A1 (de) * | 2001-08-02 | 2003-02-13 | Team Nanotec Gmbh | Maske und Maskenherstellungsverfahren |
DE10314212B4 (de) | 2002-03-29 | 2010-06-02 | Hoya Corp. | Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske |
WO2004015764A2 (en) | 2002-08-08 | 2004-02-19 | Leedy Glenn J | Vertical system integration |
US6855945B1 (en) * | 2003-01-27 | 2005-02-15 | Stephen H. Silder | Electrically conductive synthetic diamond apertures for electron and other particulate beam systems |
US6859330B2 (en) * | 2003-06-04 | 2005-02-22 | Intel Corporation | Micromachined pellicle splitters and tunable laser modules incorporating same |
DE10339823B4 (de) * | 2003-08-25 | 2005-06-16 | Hahn-Meitner-Institut Berlin Gmbh | Verwendung eines Fensters in einer Ultrahochvakuum-Kammer |
US8486287B2 (en) * | 2004-03-19 | 2013-07-16 | The Regents Of The University Of California | Methods for fabrication of positional and compositionally controlled nanostructures on substrate |
US7709820B2 (en) * | 2007-06-01 | 2010-05-04 | Moxtek, Inc. | Radiation window with coated silicon support structure |
US7737424B2 (en) * | 2007-06-01 | 2010-06-15 | Moxtek, Inc. | X-ray window with grid structure |
US20080296479A1 (en) * | 2007-06-01 | 2008-12-04 | Anderson Eric C | Polymer X-Ray Window with Diamond Support Structure |
WO2009045915A2 (en) | 2007-09-28 | 2009-04-09 | Brigham Young University | Carbon nanotube assembly |
US8498381B2 (en) | 2010-10-07 | 2013-07-30 | Moxtek, Inc. | Polymer layer on X-ray window |
US9305735B2 (en) | 2007-09-28 | 2016-04-05 | Brigham Young University | Reinforced polymer x-ray window |
WO2009085351A2 (en) * | 2007-09-28 | 2009-07-09 | Brigham Young University | X-ray window with carbon nanotube frame |
US8247971B1 (en) | 2009-03-19 | 2012-08-21 | Moxtek, Inc. | Resistively heated small planar filament |
US7983394B2 (en) | 2009-12-17 | 2011-07-19 | Moxtek, Inc. | Multiple wavelength X-ray source |
US8995621B2 (en) | 2010-09-24 | 2015-03-31 | Moxtek, Inc. | Compact X-ray source |
US8526574B2 (en) | 2010-09-24 | 2013-09-03 | Moxtek, Inc. | Capacitor AC power coupling across high DC voltage differential |
US8804910B1 (en) | 2011-01-24 | 2014-08-12 | Moxtek, Inc. | Reduced power consumption X-ray source |
US8750458B1 (en) | 2011-02-17 | 2014-06-10 | Moxtek, Inc. | Cold electron number amplifier |
US8929515B2 (en) * | 2011-02-23 | 2015-01-06 | Moxtek, Inc. | Multiple-size support for X-ray window |
US8792619B2 (en) | 2011-03-30 | 2014-07-29 | Moxtek, Inc. | X-ray tube with semiconductor coating |
US8989354B2 (en) | 2011-05-16 | 2015-03-24 | Brigham Young University | Carbon composite support structure |
US9076628B2 (en) | 2011-05-16 | 2015-07-07 | Brigham Young University | Variable radius taper x-ray window support structure |
US9174412B2 (en) | 2011-05-16 | 2015-11-03 | Brigham Young University | High strength carbon fiber composite wafers for microfabrication |
US8817950B2 (en) | 2011-12-22 | 2014-08-26 | Moxtek, Inc. | X-ray tube to power supply connector |
US8761344B2 (en) | 2011-12-29 | 2014-06-24 | Moxtek, Inc. | Small x-ray tube with electron beam control optics |
DE102012208710B3 (de) | 2012-05-24 | 2013-09-19 | Incoatec Gmbh | Verfahren zur Herstellung einer einkristallinen Röntgenblende und Röntgenanalysegerät mit einkristalliner Röntgenblende |
US9173623B2 (en) | 2013-04-19 | 2015-11-03 | Samuel Soonho Lee | X-ray tube and receiver inside mouth |
US9152036B2 (en) * | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
JP6667215B2 (ja) * | 2014-07-24 | 2020-03-18 | キヤノン株式会社 | X線遮蔽格子、構造体、トールボット干渉計、x線遮蔽格子の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1235077A (en) * | 1969-05-07 | 1971-06-09 | Standard Telephones Cables Ltd | Improvements in or relating to pressure transducers |
US3648131A (en) * | 1969-11-07 | 1972-03-07 | Ibm | Hourglass-shaped conductive connection through semiconductor structures |
US3713922A (en) * | 1970-12-28 | 1973-01-30 | Bell Telephone Labor Inc | High resolution shadow masks and their preparation |
BE794343A (fr) * | 1972-01-21 | 1973-07-19 | Westinghouse Electric Corp | Methode de protection d'une partie d'un substrat soumis a l'action d'1n faisceau electronique |
DE2536718C3 (de) * | 1975-08-18 | 1978-04-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung geätzter Strukturen in Festkörperoberflächen durch Ionenätzung und Bestrahlungsmaske zur Verwendung in diesem Verfahren |
US4021276A (en) * | 1975-12-29 | 1977-05-03 | Western Electric Company, Inc. | Method of making rib-structure shadow mask for ion implantation |
DE2604939C3 (de) * | 1976-02-09 | 1978-07-27 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen von wenigstens einem Durchgangsloch insbesondere einer Düse für Tintenstrahldrucker |
US4198263A (en) * | 1976-03-30 | 1980-04-15 | Tokyo Shibaura Electric Co., Ltd. | Mask for soft X-rays and method of manufacture |
JPS5350680A (en) * | 1976-10-19 | 1978-05-09 | Nec Corp | Transfer mask for x-ray exposure and its production |
US4092211A (en) * | 1976-11-18 | 1978-05-30 | Northern Telecom Limited | Control of etch rate of silicon dioxide in boiling phosphoric acid |
IT1109829B (it) * | 1977-07-05 | 1985-12-23 | Ibm | Processo di fabbricazione di cercuiti integrati |
US4269654A (en) * | 1977-11-18 | 1981-05-26 | Rca Corporation | Silicon nitride and silicon oxide etchant |
DE2922416A1 (de) * | 1979-06-01 | 1980-12-11 | Ibm Deutschland | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
-
1980
- 1980-09-19 DE DE8080105618T patent/DE3070833D1/de not_active Expired
- 1980-09-19 EP EP19800105618 patent/EP0048291B1/de not_active Expired
-
1981
- 1981-07-10 JP JP10716381A patent/JPS5759330A/ja active Pending
- 1981-07-17 US US06/284,268 patent/US4393127A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63255918A (ja) * | 1987-04-13 | 1988-10-24 | Nissin Electric Co Ltd | X線露光用マスクとその製造方法 |
JP2012060178A (ja) * | 2005-04-20 | 2012-03-22 | Carl Zeiss Smt Gmbh | 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子 |
Also Published As
Publication number | Publication date |
---|---|
DE3070833D1 (en) | 1985-08-08 |
EP0048291B1 (de) | 1985-07-03 |
US4393127A (en) | 1983-07-12 |
EP0048291A1 (de) | 1982-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5759330A (en) | Silicon structure | |
JPS56169118A (en) | Silicon manufacture | |
CS23281A2 (en) | Zpusob vyroby novych retardovanych forem dipyridamolu | |
JPS56103098A (en) | Cargoohandling structure | |
GB8331916D0 (en) | Semiconductor devices | |
EP0042489A3 (en) | Semiconductor devices | |
CS339581A2 (en) | Zpusob vyroby novych oxiranu | |
DE3170442D1 (en) | Combination bumper-and-radiator structure | |
JPS5712525A (en) | Semiconductor element | |
DE3173835D1 (en) | Semiconductor devices | |
GB8329071D0 (en) | Semiconductor | |
CS235681A2 (en) | Zpusob vyroby mocovinovych granulek | |
JPS577159A (en) | Semiconductor element | |
CS34081A1 (en) | Elektromagneticke upinaci zarizeni | |
GB2091395B (en) | Cartridge-operated devices | |
GB8326563D0 (en) | Semiconductor devices | |
CS182781A1 (en) | Zpusob regeneracniho vyuziti tepelneho obsahu nenasycenych roztoku | |
CS16981A2 (en) | Zpusob vyroby cpavku | |
CS227481A2 (en) | Zpusob pripravy vincristinu | |
CS12981A2 (en) | Zpusob pripravy benzenaminove slouceniny | |
CS198081A2 (en) | Herbicidni prostredek | |
CS267081A1 (en) | Hlava vicestupnoveho prevodu | |
GB2087641B (en) | Semiconductor devices | |
CS233381A1 (en) | Kancelarsky dirkovac skladne konstrukce | |
CS302581A1 (en) | Vzorkovnice vzorkovac |