JPS5756933A - Spin etching method - Google Patents

Spin etching method

Info

Publication number
JPS5756933A
JPS5756933A JP13128280A JP13128280A JPS5756933A JP S5756933 A JPS5756933 A JP S5756933A JP 13128280 A JP13128280 A JP 13128280A JP 13128280 A JP13128280 A JP 13128280A JP S5756933 A JPS5756933 A JP S5756933A
Authority
JP
Japan
Prior art keywords
etched
light beam
spin
etch
transmitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13128280A
Other languages
Japanese (ja)
Inventor
Atsushi Miyahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13128280A priority Critical patent/JPS5756933A/en
Publication of JPS5756933A publication Critical patent/JPS5756933A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To detect accurately the etch completing time particularly by emitting light rays to a material to be etched, receiving a transmitted light and thereby monitoring the progress of the spin etching. CONSTITUTION:A material 1 to be etched is mounted on a base 2, and is rotated by a motor 4. The rotation of a shaft 3 is detected by a detector 7, which thus produces a synchronizing signal from a generator 8 to flash a light source 9, a beam is condensed via a lens 10 as parallel light beam 11, which is emitted to the specific same region, e.g., positioning pattern of the material 1. As the etching advances, the region becomes transparent and large light beam is transmitted. This light beam is received by a photodetector 12, is compared by a comparator 15 with a reference signal 14, and an etch completion signal 15 is outputted. A controller C17 is started, stopped and utilized for various adjustments. According to this configuration the progress state can be readily monitored, and the material can be accurately spin etched.
JP13128280A 1980-09-20 1980-09-20 Spin etching method Pending JPS5756933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13128280A JPS5756933A (en) 1980-09-20 1980-09-20 Spin etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13128280A JPS5756933A (en) 1980-09-20 1980-09-20 Spin etching method

Publications (1)

Publication Number Publication Date
JPS5756933A true JPS5756933A (en) 1982-04-05

Family

ID=15054295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13128280A Pending JPS5756933A (en) 1980-09-20 1980-09-20 Spin etching method

Country Status (1)

Country Link
JP (1) JPS5756933A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848673A (en) * 1981-09-16 1983-03-22 Matsushita Electric Ind Co Ltd Etching devide for metallic thin film
JPS58210170A (en) * 1982-06-01 1983-12-07 Seiichiro Sogo Etching device of thin metallic film or oxidized film
WO2018163396A1 (en) * 2017-03-10 2018-09-13 三菱電機株式会社 Semiconductor manufacturing device and semiconductor manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848673A (en) * 1981-09-16 1983-03-22 Matsushita Electric Ind Co Ltd Etching devide for metallic thin film
JPS6214030B2 (en) * 1981-09-16 1987-03-31 Matsushita Electric Ind Co Ltd
JPS58210170A (en) * 1982-06-01 1983-12-07 Seiichiro Sogo Etching device of thin metallic film or oxidized film
WO2018163396A1 (en) * 2017-03-10 2018-09-13 三菱電機株式会社 Semiconductor manufacturing device and semiconductor manufacturing method
CN110383428A (en) * 2017-03-10 2019-10-25 三菱电机株式会社 Semiconductor manufacturing apparatus and semiconductor making method
US10763145B2 (en) 2017-03-10 2020-09-01 Mitsubishi Electric Corporation Semiconductor manufacturing equipment and semiconductor manufacturing method
CN110383428B (en) * 2017-03-10 2023-04-04 三菱电机株式会社 Semiconductor manufacturing apparatus and semiconductor manufacturing method

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