JPS5783079A - Driving method of semiconductor laser - Google Patents
Driving method of semiconductor laserInfo
- Publication number
- JPS5783079A JPS5783079A JP16004280A JP16004280A JPS5783079A JP S5783079 A JPS5783079 A JP S5783079A JP 16004280 A JP16004280 A JP 16004280A JP 16004280 A JP16004280 A JP 16004280A JP S5783079 A JPS5783079 A JP S5783079A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- driving current
- noise
- output light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06817—Noise reduction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To drive a laser in a high SN ratio by a method wherein by a driving current of a semiconductor laser being superposed and a noise component of an output light being modulated and detected, a driving current value is controlled so that a mode distribution noise may take a minimum level. CONSTITUTION:An output light of a semiconductor laser is radiated on an optical system 7 and a sensor 2. A signal is applied on a BPF3 from the detector 2 in accordance with a variation of output intensity. After a driving current of the laser 1 is set at a working state, a very low AC signal of which the frequency is far from a frequency band necessary for the optical system 7 is superposed on the driving current, a noise component of the output light of the laser 1 is converted into an electrical signal by a photo sensor 2 and detected 4 through the BPF3, a modulated noise component is taken out, and phase sensitive detection 5 between it and modulating frequency is performed. By detecting at which side of a noise peak the established driving current appears, a feedback to a driving circuit 6 is performed. By this constitution a laser having single mode oscillation originally of low noise nature is operated at a high SN ratio without any increase in mode distribution noise due to mode transition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16004280A JPS5783079A (en) | 1980-11-12 | 1980-11-12 | Driving method of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16004280A JPS5783079A (en) | 1980-11-12 | 1980-11-12 | Driving method of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5783079A true JPS5783079A (en) | 1982-05-24 |
JPS6318872B2 JPS6318872B2 (en) | 1988-04-20 |
Family
ID=15706666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16004280A Granted JPS5783079A (en) | 1980-11-12 | 1980-11-12 | Driving method of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5783079A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856377A (en) * | 1981-09-29 | 1983-04-04 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS60229541A (en) * | 1984-04-27 | 1985-11-14 | Matsushita Electric Ind Co Ltd | Optical transmitter |
JPS61281669A (en) * | 1985-05-31 | 1986-12-12 | Konishiroku Photo Ind Co Ltd | Radiant ray picture information processing method and unit |
EP0313383A2 (en) * | 1987-10-23 | 1989-04-26 | Fujitsu Limited | Apparatus and Method for Detecting Mode-Hopping in Semiconductor Lasers |
JPH0357432A (en) * | 1989-07-27 | 1991-03-12 | Advance Co Ltd | Semiconductor laser blood flow meter |
EP0460696A2 (en) * | 1990-06-07 | 1991-12-11 | Hamamatsu Photonics K.K. | Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source |
FR2689696A1 (en) * | 1991-02-12 | 1993-10-08 | Us Energy | Method and means for controlling the frequency and output power of a tunable laser diode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5474386A (en) * | 1977-10-26 | 1979-06-14 | Post Office | Controller |
-
1980
- 1980-11-12 JP JP16004280A patent/JPS5783079A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5474386A (en) * | 1977-10-26 | 1979-06-14 | Post Office | Controller |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856377A (en) * | 1981-09-29 | 1983-04-04 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS6359552B2 (en) * | 1981-09-29 | 1988-11-21 | ||
JPS60229541A (en) * | 1984-04-27 | 1985-11-14 | Matsushita Electric Ind Co Ltd | Optical transmitter |
JPS61281669A (en) * | 1985-05-31 | 1986-12-12 | Konishiroku Photo Ind Co Ltd | Radiant ray picture information processing method and unit |
EP0313383A2 (en) * | 1987-10-23 | 1989-04-26 | Fujitsu Limited | Apparatus and Method for Detecting Mode-Hopping in Semiconductor Lasers |
US4989949A (en) * | 1987-10-23 | 1991-02-05 | Fujitsu Limited | Arrangement for discriminating whether or not semiconductor laser is functional |
JPH0357432A (en) * | 1989-07-27 | 1991-03-12 | Advance Co Ltd | Semiconductor laser blood flow meter |
JPH0556898B2 (en) * | 1989-07-27 | 1993-08-20 | Advance Kk | |
EP0460696A2 (en) * | 1990-06-07 | 1991-12-11 | Hamamatsu Photonics K.K. | Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source |
US5179565A (en) * | 1990-06-07 | 1993-01-12 | Hamamatsu Photonics, K.K. | Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source |
FR2689696A1 (en) * | 1991-02-12 | 1993-10-08 | Us Energy | Method and means for controlling the frequency and output power of a tunable laser diode |
Also Published As
Publication number | Publication date |
---|---|
JPS6318872B2 (en) | 1988-04-20 |
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