SE7710257L - METHOD AND DEVICE FOR PLACMETCHING END POINT CHECK - Google Patents
METHOD AND DEVICE FOR PLACMETCHING END POINT CHECKInfo
- Publication number
- SE7710257L SE7710257L SE7710257A SE7710257A SE7710257L SE 7710257 L SE7710257 L SE 7710257L SE 7710257 A SE7710257 A SE 7710257A SE 7710257 A SE7710257 A SE 7710257A SE 7710257 L SE7710257 L SE 7710257L
- Authority
- SE
- Sweden
- Prior art keywords
- end point
- etching
- placmetching
- point check
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
- H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The end point in plasma etching is detected by monitoring the optical emission from the plasma, selecting a particular optical emission line and detecting a substantial variation in the intensity of the emission. This indicates a change in material being etched and thus the completion of etching of one material, or the beginning of etching of another material. It is also applicable to removing, or etching, photoresist material. - i
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA261,108A CA1071579A (en) | 1976-09-13 | 1976-09-13 | End point control in plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7710257L true SE7710257L (en) | 1978-03-14 |
SE439266B SE439266B (en) | 1985-06-10 |
Family
ID=4106853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7710257A SE439266B (en) | 1976-09-13 | 1977-09-13 | SET AND DEVICE FOR ASTAD COMING OF END PLOT POINT CHECKING IN PLASMA |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS6013072B2 (en) |
CA (1) | CA1071579A (en) |
DE (1) | DE2736262A1 (en) |
FR (1) | FR2364593A1 (en) |
GB (1) | GB1569939A (en) |
NL (1) | NL7707198A (en) |
SE (1) | SE439266B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54142143A (en) * | 1978-04-27 | 1979-11-06 | Anelva Corp | Dry type etching device |
FR2487574A1 (en) * | 1980-07-24 | 1982-01-29 | Efcis | METHOD AND DEVICE FOR ATTACKING PLASMA OF A THIN LAYER |
US4415402A (en) * | 1981-04-02 | 1983-11-15 | The Perkin-Elmer Corporation | End-point detection in plasma etching or phosphosilicate glass |
JPS5839781A (en) * | 1981-09-02 | 1983-03-08 | Toshiba Corp | Reactive ion etching device |
JPS58100740A (en) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Plasma distribution monitor |
US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
DE4016211A1 (en) * | 1990-05-19 | 1991-11-21 | Convac Gmbh | METHOD FOR MONITORING AND CONTROLLING A CORE PROCESS AND DEVICE THEREFOR |
JP2002520836A (en) | 1998-07-11 | 2002-07-09 | ボーゲム リミティッド | Improved process monitoring method |
DE19860152C1 (en) * | 1998-12-24 | 2000-06-15 | Temic Semiconductor Gmbh | Layer sequence structuring on silicon wafers by plasma etching involves monitoring photolacquer degradation by activated hydrogen spectral line intensity determination |
DE102014107385A1 (en) * | 2014-05-26 | 2015-11-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for its production |
GB201611652D0 (en) * | 2016-07-04 | 2016-08-17 | Spts Technologies Ltd | Method of detecting a condition |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US366492A (en) * | 1887-07-12 | Ash-sifter | ||
JPS529353B2 (en) * | 1972-04-18 | 1977-03-15 | ||
JPS5135639A (en) * | 1974-09-20 | 1976-03-26 | Hitachi Ltd | HIMAKUNOPURAZUMA ETSUCHINGUSHORISHUTENKENSHUTSUHO |
JPS5421711B2 (en) * | 1975-01-20 | 1979-08-01 | ||
JPS5326674A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Plasma etching |
-
1976
- 1976-09-13 CA CA261,108A patent/CA1071579A/en not_active Expired
-
1977
- 1977-06-21 GB GB2591777A patent/GB1569939A/en not_active Expired
- 1977-06-29 NL NL7707198A patent/NL7707198A/en not_active Application Discontinuation
- 1977-08-11 DE DE19772736262 patent/DE2736262A1/en not_active Withdrawn
- 1977-08-17 JP JP52097935A patent/JPS6013072B2/en not_active Expired
- 1977-09-12 FR FR7727505A patent/FR2364593A1/en not_active Withdrawn
- 1977-09-13 SE SE7710257A patent/SE439266B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2736262A1 (en) | 1978-03-16 |
SE439266B (en) | 1985-06-10 |
JPS6013072B2 (en) | 1985-04-04 |
JPS5334641A (en) | 1978-03-31 |
GB1569939A (en) | 1980-06-25 |
CA1071579A (en) | 1980-02-12 |
NL7707198A (en) | 1978-03-15 |
FR2364593A1 (en) | 1978-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE7710257L (en) | METHOD AND DEVICE FOR PLACMETCHING END POINT CHECK | |
JPS5212577A (en) | Automatic location device | |
JPS51117538A (en) | Object image recognizing method and device | |
JPS52119586A (en) | Method of detecting damage in tool optically | |
JPS5569158A (en) | Operation checking system of detector of copying machine | |
JPS5563830A (en) | End point detection method and its apparatus | |
JPS5248183A (en) | Method for detecting worn out or broken blade tools | |
JPS5326674A (en) | Plasma etching | |
JPS5294029A (en) | Monitoring method of optical detecting circuit | |
JPS5363083A (en) | Detecting circuit for minute changing quantity | |
JPS5756933A (en) | Spin etching method | |
JPS5251962A (en) | Detector for warking radius of crane-mobile and so on | |
JPS527682A (en) | Method of detecting defects in photoresists | |
JPS51129198A (en) | Abnormal supervisory circuit of trafic signal controll circuit. | |
JPS5680186A (en) | Laser device | |
JPS5319764A (en) | Mark detection system in electron beam exposure | |
JPS5419763A (en) | Optical attenuator | |
NO156183C (en) | DEVICE FOR MONITORING THE OPERATION OF A GAS TURBINARY EVENT. | |
NO147931C (en) | DEVICE FOR MONITORING AN INPUT SIGNAL. | |
JPS5315171A (en) | Signal level detection circuit | |
JPS535983A (en) | Driving method of #-#-# negative resistance element | |
JPS52109307A (en) | Information transmission device | |
JPS52109309A (en) | Information transmission device | |
JPS52109308A (en) | Information transmission device | |
JPS54101277A (en) | Prober for semiconductor wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7710257-2 Effective date: 19900703 Format of ref document f/p: F |