SE7710257L - Sett och anordning for astadkommande av slutpunktskontroll vid plasmaetsning - Google Patents

Sett och anordning for astadkommande av slutpunktskontroll vid plasmaetsning

Info

Publication number
SE7710257L
SE7710257L SE7710257A SE7710257A SE7710257L SE 7710257 L SE7710257 L SE 7710257L SE 7710257 A SE7710257 A SE 7710257A SE 7710257 A SE7710257 A SE 7710257A SE 7710257 L SE7710257 L SE 7710257L
Authority
SE
Sweden
Prior art keywords
end point
etching
placmetching
point check
plasma
Prior art date
Application number
SE7710257A
Other languages
English (en)
Other versions
SE439266B (sv
Inventor
R G Poulsen
G M Smith
W D Westwood
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of SE7710257L publication Critical patent/SE7710257L/sv
Publication of SE439266B publication Critical patent/SE439266B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
SE7710257A 1976-09-13 1977-09-13 Sett och anordning for astadkommande av slutpunktskontroll vid plasmaetsning SE439266B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA261,108A CA1071579A (en) 1976-09-13 1976-09-13 End point control in plasma etching

Publications (2)

Publication Number Publication Date
SE7710257L true SE7710257L (sv) 1978-03-14
SE439266B SE439266B (sv) 1985-06-10

Family

ID=4106853

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7710257A SE439266B (sv) 1976-09-13 1977-09-13 Sett och anordning for astadkommande av slutpunktskontroll vid plasmaetsning

Country Status (7)

Country Link
JP (1) JPS6013072B2 (sv)
CA (1) CA1071579A (sv)
DE (1) DE2736262A1 (sv)
FR (1) FR2364593A1 (sv)
GB (1) GB1569939A (sv)
NL (1) NL7707198A (sv)
SE (1) SE439266B (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142143A (en) * 1978-04-27 1979-11-06 Anelva Corp Dry type etching device
FR2487574A1 (fr) * 1980-07-24 1982-01-29 Efcis Procede et dispositif d'attaque sous plasma d'une couche mince
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
JPS5839781A (ja) * 1981-09-02 1983-03-08 Toshiba Corp 反応性イオンエツチング装置
JPS58100740A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ分布モニタ
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
DE4016211A1 (de) * 1990-05-19 1991-11-21 Convac Gmbh Verfahren zur ueberwachung und steuerung eines aetzvorgangs und vorrichtung hierfuer
JP2002520836A (ja) 1998-07-11 2002-07-09 ボーゲム リミティッド 改良されたプロセスモニタ方法
DE19860152C1 (de) * 1998-12-24 2000-06-15 Temic Semiconductor Gmbh Verfahren zur Erkennung von Lackverbrennungen
DE102014107385A1 (de) * 2014-05-26 2015-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
GB201611652D0 (en) * 2016-07-04 2016-08-17 Spts Technologies Ltd Method of detecting a condition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US366492A (en) * 1887-07-12 Ash-sifter
JPS529353B2 (sv) * 1972-04-18 1977-03-15
JPS5135639A (ja) * 1974-09-20 1976-03-26 Hitachi Ltd Himakunopurazumaetsuchingushorishutenkenshutsuho
JPS5421711B2 (sv) * 1975-01-20 1979-08-01
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching

Also Published As

Publication number Publication date
DE2736262A1 (de) 1978-03-16
SE439266B (sv) 1985-06-10
JPS6013072B2 (ja) 1985-04-04
JPS5334641A (en) 1978-03-31
GB1569939A (en) 1980-06-25
CA1071579A (en) 1980-02-12
NL7707198A (nl) 1978-03-15
FR2364593A1 (fr) 1978-04-07

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