JPS5754334A - Selective heat treatment of substrate - Google Patents

Selective heat treatment of substrate

Info

Publication number
JPS5754334A
JPS5754334A JP13092480A JP13092480A JPS5754334A JP S5754334 A JPS5754334 A JP S5754334A JP 13092480 A JP13092480 A JP 13092480A JP 13092480 A JP13092480 A JP 13092480A JP S5754334 A JPS5754334 A JP S5754334A
Authority
JP
Japan
Prior art keywords
film
heat treatment
layer
substrate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13092480A
Other languages
Japanese (ja)
Inventor
Shigero Kuninobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13092480A priority Critical patent/JPS5754334A/en
Publication of JPS5754334A publication Critical patent/JPS5754334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

PURPOSE:To improve the selectivity of heat treatment by providing selectively a film of prescribed thickness on the occasion when the substrate is subjected to the heat treatment by using laser beams. CONSTITUTION:A polycrystalline Si layer 3 is formed on an Si oxidized film 2 provided on the surface of the monolithic substrate 1, a resistant layer 5 is formed thereafter by doping impurity atoms on the surface of the layer 3, forming by etching is conducted in prescribed dimensions and shape, and then an Si nitride film 21 having the thickness of lambda/4n (lambda is the wavelength of the laser beam and n is the refractive index of the film) is formed selectively on the surface. Aftrwards, the laser beams from a YAG laser and the like is applied to diffuse impurities under the nitride film 21 inward, whereby a region 23 is formed. By forming the single-layer film 21 in the thickness of nonreflective condition in this way, it becomes possible to conduct heat treatment with excellent selectivity and high precision.
JP13092480A 1980-09-19 1980-09-19 Selective heat treatment of substrate Pending JPS5754334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13092480A JPS5754334A (en) 1980-09-19 1980-09-19 Selective heat treatment of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13092480A JPS5754334A (en) 1980-09-19 1980-09-19 Selective heat treatment of substrate

Publications (1)

Publication Number Publication Date
JPS5754334A true JPS5754334A (en) 1982-03-31

Family

ID=15045908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13092480A Pending JPS5754334A (en) 1980-09-19 1980-09-19 Selective heat treatment of substrate

Country Status (1)

Country Link
JP (1) JPS5754334A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548926A (en) * 1978-10-02 1980-04-08 Hitachi Ltd Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548926A (en) * 1978-10-02 1980-04-08 Hitachi Ltd Preparation of semiconductor device

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