JPS5753975A - - Google Patents
Info
- Publication number
- JPS5753975A JPS5753975A JP56121767A JP12176781A JPS5753975A JP S5753975 A JPS5753975 A JP S5753975A JP 56121767 A JP56121767 A JP 56121767A JP 12176781 A JP12176781 A JP 12176781A JP S5753975 A JPS5753975 A JP S5753975A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19803029553 DE3029553A1 (de) | 1980-08-04 | 1980-08-04 | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5753975A true JPS5753975A (ja) | 1982-03-31 |
Family
ID=6108876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56121767A Pending JPS5753975A (ja) | 1980-08-04 | 1981-08-03 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4835596A (ja) |
EP (1) | EP0045447B1 (ja) |
JP (1) | JPS5753975A (ja) |
DE (2) | DE3029553A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3215652A1 (de) * | 1982-04-27 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Integrierbarer bipolarer transistor |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
JPS61158175A (ja) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | プレ−ナ型トランジスタ装置 |
US4886762A (en) * | 1985-08-06 | 1989-12-12 | Motorola Inc. | Monolithic temperature compensated voltage-reference diode and method for its manufacture |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
JPS62210667A (ja) * | 1986-03-11 | 1987-09-16 | Fujitsu Ltd | 半導体記憶装置 |
IT1204244B (it) * | 1986-03-21 | 1989-03-01 | Sgs Microelettronica Spa | Struttura npn equivalente con tensione di rottura maggiorata rispetto alla tensione di rottura intrinseca dell'npn |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
NL8702671A (nl) * | 1987-11-09 | 1989-06-01 | Philips Nv | Laterale hoogspanningstransistor. |
JP2728671B2 (ja) * | 1988-02-03 | 1998-03-18 | 株式会社東芝 | バイポーラトランジスタの製造方法 |
US5068756A (en) * | 1989-02-16 | 1991-11-26 | Texas Instruments Incorporated | Integrated circuit composed of group III-V compound field effect and bipolar semiconductors |
FR2672733B1 (fr) * | 1991-02-13 | 1997-08-22 | France Telecom | Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos. |
FR2708144A1 (fr) * | 1993-07-22 | 1995-01-27 | Philips Composants | Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ. |
US5428233A (en) * | 1994-04-04 | 1995-06-27 | Motorola Inc. | Voltage controlled resistive device |
SE513512C2 (sv) * | 1994-10-31 | 2000-09-25 | Ericsson Telefon Ab L M | Halvledaranordning med ett flytande kollektorområde |
JP3917211B2 (ja) * | 1996-04-15 | 2007-05-23 | 三菱電機株式会社 | 半導体装置 |
DE19902749C2 (de) * | 1999-01-25 | 2002-02-07 | Infineon Technologies Ag | Leistungstransistoranordnung mit hoher Spannungsfestigkeit |
JP3768079B2 (ja) * | 2000-07-25 | 2006-04-19 | シャープ株式会社 | トランジスタ |
US6710424B2 (en) | 2001-09-21 | 2004-03-23 | Airip | RF chipset architecture |
US11217665B2 (en) | 2020-02-04 | 2022-01-04 | Texas Instruments Incorporated | Bipolar junction transistor with constricted collector region having high gain and early voltage product |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244574A (en) * | 1975-10-06 | 1977-04-07 | Nec Corp | Semiconductor device |
JPS5489581A (en) * | 1977-12-27 | 1979-07-16 | Sony Corp | Composite transistor circuit |
JPS5642368A (en) * | 1979-09-12 | 1981-04-20 | Nec Corp | Semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
US3564356A (en) * | 1968-10-24 | 1971-02-16 | Tektronix Inc | High voltage integrated circuit transistor |
US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
JPS5367368A (en) * | 1976-11-29 | 1978-06-15 | Sony Corp | Semiconductor device |
DE2710878A1 (de) * | 1977-03-12 | 1978-09-14 | Itt Ind Gmbh Deutsche | Verfahren zum herstellen einer an der oberflaeche eines halbleiterkoerpers aus silicium liegenden zone einer monolithisch integrierten i hoch 2 l-schaltung |
US4151540A (en) * | 1977-12-08 | 1979-04-24 | Fairchild Camera And Instrument Corporation | High beta, high frequency transistor structure |
CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
US4337474A (en) * | 1978-08-31 | 1982-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
DE4133765C1 (ja) * | 1991-10-11 | 1992-10-22 | Siemens Ag, 8000 Muenchen, De |
-
1980
- 1980-08-04 DE DE19803029553 patent/DE3029553A1/de not_active Withdrawn
-
1981
- 1981-07-22 DE DE8181105803T patent/DE3172979D1/de not_active Expired
- 1981-07-22 EP EP81105803A patent/EP0045447B1/de not_active Expired
- 1981-08-03 JP JP56121767A patent/JPS5753975A/ja active Pending
-
1984
- 1984-03-19 US US06/590,556 patent/US4835596A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244574A (en) * | 1975-10-06 | 1977-04-07 | Nec Corp | Semiconductor device |
JPS5489581A (en) * | 1977-12-27 | 1979-07-16 | Sony Corp | Composite transistor circuit |
JPS5642368A (en) * | 1979-09-12 | 1981-04-20 | Nec Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
EP0045447B1 (de) | 1985-11-21 |
DE3029553A1 (de) | 1982-03-11 |
DE3172979D1 (en) | 1986-01-02 |
US4835596A (en) | 1989-05-30 |
EP0045447A1 (de) | 1982-02-10 |