JPS5750428A - Method and apparatus for manufacturing semiconductor device - Google Patents
Method and apparatus for manufacturing semiconductor deviceInfo
- Publication number
- JPS5750428A JPS5750428A JP55126693A JP12669380A JPS5750428A JP S5750428 A JPS5750428 A JP S5750428A JP 55126693 A JP55126693 A JP 55126693A JP 12669380 A JP12669380 A JP 12669380A JP S5750428 A JPS5750428 A JP S5750428A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- optical beams
- strong optical
- strong
- driving device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126693A JPS5750428A (en) | 1980-09-12 | 1980-09-12 | Method and apparatus for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126693A JPS5750428A (en) | 1980-09-12 | 1980-09-12 | Method and apparatus for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5750428A true JPS5750428A (en) | 1982-03-24 |
Family
ID=14941503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55126693A Pending JPS5750428A (en) | 1980-09-12 | 1980-09-12 | Method and apparatus for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5750428A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151890U (ja) * | 1982-04-07 | 1983-10-12 | 株式会社精工舎 | デイスプレイ装置 |
| JPS6072227A (ja) * | 1983-08-29 | 1985-04-24 | バリアン・アソシエイツ・インコ−ポレイテツド | 半導体ウエフア中へド−パントを高温ドライブイン拡散する方法 |
| US5425392A (en) * | 1993-05-26 | 1995-06-20 | Micron Semiconductor, Inc. | Method DRAM polycide rowline formation |
| US5716862A (en) * | 1993-05-26 | 1998-02-10 | Micron Technology, Inc. | High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS |
| JP2019145810A (ja) * | 2019-04-01 | 2019-08-29 | 国立大学法人九州大学 | レーザドーピング装置及びレーザドーピング方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240059A (en) * | 1975-09-25 | 1977-03-28 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS54131866A (en) * | 1978-04-05 | 1979-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Heat treatment device |
| JPS5552221A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Impurity dispersion method and its device |
-
1980
- 1980-09-12 JP JP55126693A patent/JPS5750428A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240059A (en) * | 1975-09-25 | 1977-03-28 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS54131866A (en) * | 1978-04-05 | 1979-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Heat treatment device |
| JPS5552221A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Impurity dispersion method and its device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151890U (ja) * | 1982-04-07 | 1983-10-12 | 株式会社精工舎 | デイスプレイ装置 |
| JPS6072227A (ja) * | 1983-08-29 | 1985-04-24 | バリアン・アソシエイツ・インコ−ポレイテツド | 半導体ウエフア中へド−パントを高温ドライブイン拡散する方法 |
| US5425392A (en) * | 1993-05-26 | 1995-06-20 | Micron Semiconductor, Inc. | Method DRAM polycide rowline formation |
| US5716862A (en) * | 1993-05-26 | 1998-02-10 | Micron Technology, Inc. | High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS |
| JP2019145810A (ja) * | 2019-04-01 | 2019-08-29 | 国立大学法人九州大学 | レーザドーピング装置及びレーザドーピング方法 |
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