JPS5748259A - Solid-state image pickup element - Google Patents

Solid-state image pickup element

Info

Publication number
JPS5748259A
JPS5748259A JP55122401A JP12240180A JPS5748259A JP S5748259 A JPS5748259 A JP S5748259A JP 55122401 A JP55122401 A JP 55122401A JP 12240180 A JP12240180 A JP 12240180A JP S5748259 A JPS5748259 A JP S5748259A
Authority
JP
Japan
Prior art keywords
layer
electrode
corrosion
image pickup
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55122401A
Other languages
Japanese (ja)
Inventor
Tsutomu Fujita
Hideo Iwayagi
Tsunehisa Horiuchi
Yoshio Iwata
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55122401A priority Critical patent/JPS5748259A/en
Publication of JPS5748259A publication Critical patent/JPS5748259A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier

Abstract

PURPOSE:To obtain the solid-state image pickup element for color having no corrosion and breaking of wire on the Al layer of an electrode caused by the moisture coming from the organic material of a filter by a method wherein the electrode for exterior connection of a light receiving element is constituted by multi-layer structure. CONSTITUTION:An insulating film 15 is formed on a substrate 14 and an Al layer 16 is coated on an electrode hole. Subsequently, an Mo layer 18, a Ti layer 19 and an Au layer 20 are formed by evaporation and a bonding pad 3, to be used as an electrode for external connection, is constituted. The Au layer 20 is arranged and tightly contacted on the Al layer 16 through the intermediary of an Mo layer 18 and a Ti layer 19, thereby enabling to eliminate the reaction between Al layer 16 and the Au layer 20 and the corrosion and breaking of wire on the Al layer can also be eliminated. Also, the generation of the corrosion between Al layer and the phosphorus glass located at the top surface is prevented and the reliability of the subject element can be improved.
JP55122401A 1980-09-05 1980-09-05 Solid-state image pickup element Pending JPS5748259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122401A JPS5748259A (en) 1980-09-05 1980-09-05 Solid-state image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122401A JPS5748259A (en) 1980-09-05 1980-09-05 Solid-state image pickup element

Publications (1)

Publication Number Publication Date
JPS5748259A true JPS5748259A (en) 1982-03-19

Family

ID=14834875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122401A Pending JPS5748259A (en) 1980-09-05 1980-09-05 Solid-state image pickup element

Country Status (1)

Country Link
JP (1) JPS5748259A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924295A (en) * 1986-11-28 1990-05-08 Siemens Aktiengesellschaft Integrated semi-conductor circuit comprising at least two metallization levels composed of aluminum or aluminum compounds and a method for the manufacture of same
EP0607732A3 (en) * 1993-01-08 1994-11-09 Ibm Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal.
EP0895288A2 (en) * 1989-07-01 1999-02-03 Kabushiki Kaisha Toshiba Electrode line for semiconducor device and method of manufacturing it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924295A (en) * 1986-11-28 1990-05-08 Siemens Aktiengesellschaft Integrated semi-conductor circuit comprising at least two metallization levels composed of aluminum or aluminum compounds and a method for the manufacture of same
EP0895288A2 (en) * 1989-07-01 1999-02-03 Kabushiki Kaisha Toshiba Electrode line for semiconducor device and method of manufacturing it
EP0607732A3 (en) * 1993-01-08 1994-11-09 Ibm Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal.

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