JPS5745226A - Manufacture of thin film semiconductor - Google Patents

Manufacture of thin film semiconductor

Info

Publication number
JPS5745226A
JPS5745226A JP55120360A JP12036080A JPS5745226A JP S5745226 A JPS5745226 A JP S5745226A JP 55120360 A JP55120360 A JP 55120360A JP 12036080 A JP12036080 A JP 12036080A JP S5745226 A JPS5745226 A JP S5745226A
Authority
JP
Japan
Prior art keywords
gas
thin film
mixed gas
ionized
gas cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55120360A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150372B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Katsuro Shinoda
Masahiro Hotta
Toshiyuki Doro
Yoshiyuki Fukumoto
Kenichi Kawamura
Yoji Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP55120360A priority Critical patent/JPS5745226A/ja
Publication of JPS5745226A publication Critical patent/JPS5745226A/ja
Publication of JPS6150372B2 publication Critical patent/JPS6150372B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55120360A 1980-08-30 1980-08-30 Manufacture of thin film semiconductor Granted JPS5745226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120360A JPS5745226A (en) 1980-08-30 1980-08-30 Manufacture of thin film semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120360A JPS5745226A (en) 1980-08-30 1980-08-30 Manufacture of thin film semiconductor

Publications (2)

Publication Number Publication Date
JPS5745226A true JPS5745226A (en) 1982-03-15
JPS6150372B2 JPS6150372B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-04

Family

ID=14784267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120360A Granted JPS5745226A (en) 1980-08-30 1980-08-30 Manufacture of thin film semiconductor

Country Status (1)

Country Link
JP (1) JPS5745226A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194717A (ja) * 1985-02-23 1986-08-29 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成法
JPS62179718A (ja) * 1986-02-03 1987-08-06 Nippon Telegr & Teleph Corp <Ntt> 薄膜の形成方法
JPS6481314A (en) * 1987-09-24 1989-03-27 Nec Corp Formation of doping silicon thin film
JPH02306618A (ja) * 1989-05-20 1990-12-20 Sanyo Electric Co Ltd 半導体薄膜の形成装置
CN112382509A (zh) * 2020-09-28 2021-02-19 南京大学 一种低成本两端口太阳能可充电器件及制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194717A (ja) * 1985-02-23 1986-08-29 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成法
JPS62179718A (ja) * 1986-02-03 1987-08-06 Nippon Telegr & Teleph Corp <Ntt> 薄膜の形成方法
JPS6481314A (en) * 1987-09-24 1989-03-27 Nec Corp Formation of doping silicon thin film
JPH02306618A (ja) * 1989-05-20 1990-12-20 Sanyo Electric Co Ltd 半導体薄膜の形成装置
CN112382509A (zh) * 2020-09-28 2021-02-19 南京大学 一种低成本两端口太阳能可充电器件及制备方法
CN112382509B (zh) * 2020-09-28 2022-07-29 南京大学 一种低成本两端口太阳能可充电器件及制备方法

Also Published As

Publication number Publication date
JPS6150372B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-04

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