JPS5742271A - Sensitivity adjusting system for solidstate image sensor - Google Patents

Sensitivity adjusting system for solidstate image sensor

Info

Publication number
JPS5742271A
JPS5742271A JP55116945A JP11694580A JPS5742271A JP S5742271 A JPS5742271 A JP S5742271A JP 55116945 A JP55116945 A JP 55116945A JP 11694580 A JP11694580 A JP 11694580A JP S5742271 A JPS5742271 A JP S5742271A
Authority
JP
Japan
Prior art keywords
layer
electrode
signal
image sensor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55116945A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258594B2 (enrdf_load_stackoverflow
Inventor
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55116945A priority Critical patent/JPS5742271A/ja
Publication of JPS5742271A publication Critical patent/JPS5742271A/ja
Publication of JPS6258594B2 publication Critical patent/JPS6258594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/194—Photoconductor image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55116945A 1980-08-27 1980-08-27 Sensitivity adjusting system for solidstate image sensor Granted JPS5742271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116945A JPS5742271A (en) 1980-08-27 1980-08-27 Sensitivity adjusting system for solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116945A JPS5742271A (en) 1980-08-27 1980-08-27 Sensitivity adjusting system for solidstate image sensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61207683A Division JPS62162356A (ja) 1986-09-05 1986-09-05 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS5742271A true JPS5742271A (en) 1982-03-09
JPS6258594B2 JPS6258594B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=14699605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116945A Granted JPS5742271A (en) 1980-08-27 1980-08-27 Sensitivity adjusting system for solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5742271A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6258594B2 (enrdf_load_stackoverflow) 1987-12-07

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