JPS5740798A - Read-only storage device - Google Patents

Read-only storage device

Info

Publication number
JPS5740798A
JPS5740798A JP11522180A JP11522180A JPS5740798A JP S5740798 A JPS5740798 A JP S5740798A JP 11522180 A JP11522180 A JP 11522180A JP 11522180 A JP11522180 A JP 11522180A JP S5740798 A JPS5740798 A JP S5740798A
Authority
JP
Japan
Prior art keywords
gates
inverters
data lines
amplifying circuit
column selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11522180A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11522180A priority Critical patent/JPS5740798A/en
Publication of JPS5740798A publication Critical patent/JPS5740798A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Abstract

PURPOSE:To reduce the power consumption of a ROM and decrease the number of elements, by connecting transfer gates to the drain of a transistor for writing information and the input of an amplifying circuit. CONSTITUTION:Electric power from a power source Vcc is applied through inverters 20 and 20', whose output terminals are connected to data lines 13 and 13'. Then, column selection signal 14 is applied to input teminals of the inverters 20 and 20'. To the data lines 13 and 13', one-side terminals of trasfer gates 21 and 21' are connected, and the other-side terminals are connected to a signal read line 17'. The column selection signal 14 is applied to the gates of the transfer gates 21 and 21'. The signal read line 17' is connected to an amplifying circuit 15.
JP11522180A 1980-08-20 1980-08-20 Read-only storage device Pending JPS5740798A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11522180A JPS5740798A (en) 1980-08-20 1980-08-20 Read-only storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11522180A JPS5740798A (en) 1980-08-20 1980-08-20 Read-only storage device

Publications (1)

Publication Number Publication Date
JPS5740798A true JPS5740798A (en) 1982-03-06

Family

ID=14657353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11522180A Pending JPS5740798A (en) 1980-08-20 1980-08-20 Read-only storage device

Country Status (1)

Country Link
JP (1) JPS5740798A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862413A (en) * 1985-03-29 1989-08-29 Texas Instruments Incorporated Semiconductor ROM with reduced supply voltage requirement
JPH029098A (en) * 1988-06-27 1990-01-12 Nec Corp Read-only semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862413A (en) * 1985-03-29 1989-08-29 Texas Instruments Incorporated Semiconductor ROM with reduced supply voltage requirement
JPH029098A (en) * 1988-06-27 1990-01-12 Nec Corp Read-only semiconductor storage device

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