JPS5740619A - Light detection system - Google Patents

Light detection system

Info

Publication number
JPS5740619A
JPS5740619A JP55116161A JP11616180A JPS5740619A JP S5740619 A JPS5740619 A JP S5740619A JP 55116161 A JP55116161 A JP 55116161A JP 11616180 A JP11616180 A JP 11616180A JP S5740619 A JPS5740619 A JP S5740619A
Authority
JP
Japan
Prior art keywords
light
gate
wave length
short wave
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116161A
Other languages
Japanese (ja)
Inventor
Ikuo Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to JP55116161A priority Critical patent/JPS5740619A/en
Publication of JPS5740619A publication Critical patent/JPS5740619A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To output the number of pulses according to ultraviolet rays dose by converting the input of light into an electrical change with irradiation of relatively short wave length light to a gate of an MOS transistor composing a light sensor. CONSTITUTION:While a voltage of a power source E is applied between a drain 2 and source 3 of an MOS transistor, a certain voltage ER generates an negative charge on a gate 5 covered with an insulation film 4 when applied on the gate 5 from an electronic switch S. Then, when the electronic switch S is opened, the charge is left on the gate 5 while the gate 5 retains the initial voltage ER. Under such a condition, when a light with a short wave length of about less than 4,000Angstrom enters, the working point of the transistor moves. Thus, electric changes can be obtained according to the entry of the light of such a short wave length. The transistor provides an ideal ultraviolet rays sensor because of virtual insensitivity to light of a long wave length.
JP55116161A 1980-08-22 1980-08-22 Light detection system Pending JPS5740619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116161A JPS5740619A (en) 1980-08-22 1980-08-22 Light detection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116161A JPS5740619A (en) 1980-08-22 1980-08-22 Light detection system

Publications (1)

Publication Number Publication Date
JPS5740619A true JPS5740619A (en) 1982-03-06

Family

ID=14680279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116161A Pending JPS5740619A (en) 1980-08-22 1980-08-22 Light detection system

Country Status (1)

Country Link
JP (1) JPS5740619A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116722A (en) * 1988-10-27 1990-05-01 Suzuki Motor Co Ltd Inspection using ultraviolet ray
FR2911191A1 (en) * 2007-01-09 2008-07-11 Microcomposants De Haute Secur Ultraviolet dosage measuring sensor for use in medical field, has received ultraviolet dosage measured from measurement of intensity variation of current crossing drain of transistor
FR2978244A1 (en) * 2011-07-21 2013-01-25 St Microelectronics Rousset ULTRAVIOLET RADIATION MEASUREMENT SENSOR
EP2860767A1 (en) 2013-10-10 2015-04-15 ams AG CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116722A (en) * 1988-10-27 1990-05-01 Suzuki Motor Co Ltd Inspection using ultraviolet ray
FR2911191A1 (en) * 2007-01-09 2008-07-11 Microcomposants De Haute Secur Ultraviolet dosage measuring sensor for use in medical field, has received ultraviolet dosage measured from measurement of intensity variation of current crossing drain of transistor
WO2008099099A2 (en) * 2007-01-09 2008-08-21 Microcomposants Haute Sécurité (M.H.S.) Sensor for measuring a uv dose and method for measuring a uv dose using said sensor
WO2008099099A3 (en) * 2007-01-09 2008-10-23 Microcomposants Haute Securite Sensor for measuring a uv dose and method for measuring a uv dose using said sensor
FR2978244A1 (en) * 2011-07-21 2013-01-25 St Microelectronics Rousset ULTRAVIOLET RADIATION MEASUREMENT SENSOR
US8853615B2 (en) 2011-07-21 2014-10-07 Stmicroelectronics (Rousset) Sas Ultraviolet radiation measurement sensor
EP2860767A1 (en) 2013-10-10 2015-04-15 ams AG CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device
US9577135B2 (en) 2013-10-10 2017-02-21 Ams Ag CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device

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