JPS5740619A - Light detection system - Google Patents
Light detection systemInfo
- Publication number
- JPS5740619A JPS5740619A JP55116161A JP11616180A JPS5740619A JP S5740619 A JPS5740619 A JP S5740619A JP 55116161 A JP55116161 A JP 55116161A JP 11616180 A JP11616180 A JP 11616180A JP S5740619 A JPS5740619 A JP S5740619A
- Authority
- JP
- Japan
- Prior art keywords
- light
- gate
- wave length
- short wave
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To output the number of pulses according to ultraviolet rays dose by converting the input of light into an electrical change with irradiation of relatively short wave length light to a gate of an MOS transistor composing a light sensor. CONSTITUTION:While a voltage of a power source E is applied between a drain 2 and source 3 of an MOS transistor, a certain voltage ER generates an negative charge on a gate 5 covered with an insulation film 4 when applied on the gate 5 from an electronic switch S. Then, when the electronic switch S is opened, the charge is left on the gate 5 while the gate 5 retains the initial voltage ER. Under such a condition, when a light with a short wave length of about less than 4,000Angstrom enters, the working point of the transistor moves. Thus, electric changes can be obtained according to the entry of the light of such a short wave length. The transistor provides an ideal ultraviolet rays sensor because of virtual insensitivity to light of a long wave length.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55116161A JPS5740619A (en) | 1980-08-22 | 1980-08-22 | Light detection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55116161A JPS5740619A (en) | 1980-08-22 | 1980-08-22 | Light detection system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5740619A true JPS5740619A (en) | 1982-03-06 |
Family
ID=14680279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55116161A Pending JPS5740619A (en) | 1980-08-22 | 1980-08-22 | Light detection system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740619A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02116722A (en) * | 1988-10-27 | 1990-05-01 | Suzuki Motor Co Ltd | Inspection using ultraviolet ray |
FR2911191A1 (en) * | 2007-01-09 | 2008-07-11 | Microcomposants De Haute Secur | Ultraviolet dosage measuring sensor for use in medical field, has received ultraviolet dosage measured from measurement of intensity variation of current crossing drain of transistor |
FR2978244A1 (en) * | 2011-07-21 | 2013-01-25 | St Microelectronics Rousset | ULTRAVIOLET RADIATION MEASUREMENT SENSOR |
EP2860767A1 (en) | 2013-10-10 | 2015-04-15 | ams AG | CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device |
-
1980
- 1980-08-22 JP JP55116161A patent/JPS5740619A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02116722A (en) * | 1988-10-27 | 1990-05-01 | Suzuki Motor Co Ltd | Inspection using ultraviolet ray |
FR2911191A1 (en) * | 2007-01-09 | 2008-07-11 | Microcomposants De Haute Secur | Ultraviolet dosage measuring sensor for use in medical field, has received ultraviolet dosage measured from measurement of intensity variation of current crossing drain of transistor |
WO2008099099A2 (en) * | 2007-01-09 | 2008-08-21 | Microcomposants Haute Sécurité (M.H.S.) | Sensor for measuring a uv dose and method for measuring a uv dose using said sensor |
WO2008099099A3 (en) * | 2007-01-09 | 2008-10-23 | Microcomposants Haute Securite | Sensor for measuring a uv dose and method for measuring a uv dose using said sensor |
FR2978244A1 (en) * | 2011-07-21 | 2013-01-25 | St Microelectronics Rousset | ULTRAVIOLET RADIATION MEASUREMENT SENSOR |
US8853615B2 (en) | 2011-07-21 | 2014-10-07 | Stmicroelectronics (Rousset) Sas | Ultraviolet radiation measurement sensor |
EP2860767A1 (en) | 2013-10-10 | 2015-04-15 | ams AG | CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device |
US9577135B2 (en) | 2013-10-10 | 2017-02-21 | Ams Ag | CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device |
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