JPS56122919A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS56122919A
JPS56122919A JP2577380A JP2577380A JPS56122919A JP S56122919 A JPS56122919 A JP S56122919A JP 2577380 A JP2577380 A JP 2577380A JP 2577380 A JP2577380 A JP 2577380A JP S56122919 A JPS56122919 A JP S56122919A
Authority
JP
Japan
Prior art keywords
gate
insulating film
substrate
film
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2577380A
Other languages
Japanese (ja)
Inventor
Ikuo Nishimoto
Shinichi Kuno
Kenji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to JP2577380A priority Critical patent/JPS56122919A/en
Publication of JPS56122919A publication Critical patent/JPS56122919A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To detect only ultraviolet rays with a high sensibility, by using energy of the insulating film between the gate and the substrate. CONSTITUTION:Drain 2 and source 3 are formed on substrate 1, and insulating film 4 is formed on them, and gate 5 and aluminium conductor for wiring are formed in this insulating film 4. Light shielding film 7 is provided on insulating film 4, and light transmitting hole 8 is provided in the part of film 7 corresponding to gate 5. The controller consisting of the electronic circuit is formed in one body in substrate 1. This controller charges a determined potential into gate 5 repeatedly and floats gate 5 during the time from the charge end time to the next charge starting time.
JP2577380A 1980-02-29 1980-02-29 Photosensor Pending JPS56122919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2577380A JPS56122919A (en) 1980-02-29 1980-02-29 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2577380A JPS56122919A (en) 1980-02-29 1980-02-29 Photosensor

Publications (1)

Publication Number Publication Date
JPS56122919A true JPS56122919A (en) 1981-09-26

Family

ID=12175158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2577380A Pending JPS56122919A (en) 1980-02-29 1980-02-29 Photosensor

Country Status (1)

Country Link
JP (1) JPS56122919A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116722A (en) * 1988-10-27 1990-05-01 Suzuki Motor Co Ltd Inspection using ultraviolet ray

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116722A (en) * 1988-10-27 1990-05-01 Suzuki Motor Co Ltd Inspection using ultraviolet ray

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