JPS56122919A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPS56122919A JPS56122919A JP2577380A JP2577380A JPS56122919A JP S56122919 A JPS56122919 A JP S56122919A JP 2577380 A JP2577380 A JP 2577380A JP 2577380 A JP2577380 A JP 2577380A JP S56122919 A JPS56122919 A JP S56122919A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- substrate
- film
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To detect only ultraviolet rays with a high sensibility, by using energy of the insulating film between the gate and the substrate. CONSTITUTION:Drain 2 and source 3 are formed on substrate 1, and insulating film 4 is formed on them, and gate 5 and aluminium conductor for wiring are formed in this insulating film 4. Light shielding film 7 is provided on insulating film 4, and light transmitting hole 8 is provided in the part of film 7 corresponding to gate 5. The controller consisting of the electronic circuit is formed in one body in substrate 1. This controller charges a determined potential into gate 5 repeatedly and floats gate 5 during the time from the charge end time to the next charge starting time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2577380A JPS56122919A (en) | 1980-02-29 | 1980-02-29 | Photosensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2577380A JPS56122919A (en) | 1980-02-29 | 1980-02-29 | Photosensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56122919A true JPS56122919A (en) | 1981-09-26 |
Family
ID=12175158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2577380A Pending JPS56122919A (en) | 1980-02-29 | 1980-02-29 | Photosensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56122919A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02116722A (en) * | 1988-10-27 | 1990-05-01 | Suzuki Motor Co Ltd | Inspection using ultraviolet ray |
-
1980
- 1980-02-29 JP JP2577380A patent/JPS56122919A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02116722A (en) * | 1988-10-27 | 1990-05-01 | Suzuki Motor Co Ltd | Inspection using ultraviolet ray |
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