JPS5736827A - Film forming apparatus - Google Patents
Film forming apparatusInfo
- Publication number
- JPS5736827A JPS5736827A JP11171280A JP11171280A JPS5736827A JP S5736827 A JPS5736827 A JP S5736827A JP 11171280 A JP11171280 A JP 11171280A JP 11171280 A JP11171280 A JP 11171280A JP S5736827 A JPS5736827 A JP S5736827A
- Authority
- JP
- Japan
- Prior art keywords
- gas supply
- center
- nozzle
- nozzles
- main gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To form a uniform film by arranging a rotatable jig for mounting a film forming device around a main gas supply nozzle provided at the center of a reaction furnace and further providing sub gas supply nozzles at the outer peripheral edge of the furnace. CONSTITUTION:A main gas supply nozzle 10 is provided at the center of a reaction furnace 12, and many nozzles are arranged in a circumferential direction. A susceptor 15 placing silicon substrates 15 is horizontally disposed around the nozzle to be rotated around the nozzle 10. Sub gas supply nozzles 11 radially equidistantly distributed are arranged toward the center in the vicinity of the outer edge of a bell- jar 12. Reaction gas is injected from the main gas supply nozzle, and is also injected from the subgas supply nozzles toward the center to correct the reduced amount. In this manner, a uniform film can be formed on the substrates, and this apparatus is thus adapted for large area treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11171280A JPS5736827A (en) | 1980-08-15 | 1980-08-15 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11171280A JPS5736827A (en) | 1980-08-15 | 1980-08-15 | Film forming apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5736827A true JPS5736827A (en) | 1982-02-27 |
Family
ID=14568242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11171280A Pending JPS5736827A (en) | 1980-08-15 | 1980-08-15 | Film forming apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5736827A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003048430A1 (en) * | 2001-11-27 | 2003-06-12 | Osram Opto Semiconductors Gmbh | Device and method for producing, removing or treating layers on a substrate |
-
1980
- 1980-08-15 JP JP11171280A patent/JPS5736827A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003048430A1 (en) * | 2001-11-27 | 2003-06-12 | Osram Opto Semiconductors Gmbh | Device and method for producing, removing or treating layers on a substrate |
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