JPS5732634A - Production of pattern with fine gap - Google Patents

Production of pattern with fine gap

Info

Publication number
JPS5732634A
JPS5732634A JP10860980A JP10860980A JPS5732634A JP S5732634 A JPS5732634 A JP S5732634A JP 10860980 A JP10860980 A JP 10860980A JP 10860980 A JP10860980 A JP 10860980A JP S5732634 A JPS5732634 A JP S5732634A
Authority
JP
Japan
Prior art keywords
pattern
thin film
film layer
fine gap
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10860980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039613B2 (enrdf_load_stackoverflow
Inventor
Niwaji Majima
Kiyoshi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10860980A priority Critical patent/JPS5732634A/ja
Publication of JPS5732634A publication Critical patent/JPS5732634A/ja
Publication of JPH039613B2 publication Critical patent/JPH039613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10860980A 1980-08-07 1980-08-07 Production of pattern with fine gap Granted JPS5732634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10860980A JPS5732634A (en) 1980-08-07 1980-08-07 Production of pattern with fine gap

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10860980A JPS5732634A (en) 1980-08-07 1980-08-07 Production of pattern with fine gap

Publications (2)

Publication Number Publication Date
JPS5732634A true JPS5732634A (en) 1982-02-22
JPH039613B2 JPH039613B2 (enrdf_load_stackoverflow) 1991-02-08

Family

ID=14489132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10860980A Granted JPS5732634A (en) 1980-08-07 1980-08-07 Production of pattern with fine gap

Country Status (1)

Country Link
JP (1) JPS5732634A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH039613B2 (enrdf_load_stackoverflow) 1991-02-08

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