JPS5731133A - Drawing device by electron beam - Google Patents

Drawing device by electron beam

Info

Publication number
JPS5731133A
JPS5731133A JP10501580A JP10501580A JPS5731133A JP S5731133 A JPS5731133 A JP S5731133A JP 10501580 A JP10501580 A JP 10501580A JP 10501580 A JP10501580 A JP 10501580A JP S5731133 A JPS5731133 A JP S5731133A
Authority
JP
Japan
Prior art keywords
coordinates
informations
length
fundamental
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10501580A
Other languages
Japanese (ja)
Inventor
Soichiro Hayashi
Hideyuki Kakiuchi
Shigemasa Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10501580A priority Critical patent/JPS5731133A/en
Publication of JPS5731133A publication Critical patent/JPS5731133A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To draw a predetermined figure by generating fundamental figures of different kinds by the scanning of rectangular electron beam with variable length and selecting the necessary figure. CONSTITUTION:The figure informations of a semiconductor device can generally be represented by the fundamental figures of five kinds, and can be expressed by beam-ON coordinates BON, OFF coordinates BOFF, rectangular electron beam length BL and angular informations A+ or -, B+ or -. Beam length after passing a rectangular iris 6 is expanded and contracted by the deflection of a circular beam 12a passing through a blanking iris. The amount of positional variation BS also changes in the beam length when deflection signals YS increases from on coordinates YN, and the BS are all constituted from the BL and (YS-YN)cotA or (YS-YN)cotB in each fundamental figure. The figure is divided into the fundamental figures of five kinds by means of a computer, the beam ON-OFF coordainates, angles, beam length informations, the starting of scanning, beam ON-OFF and the signals of a skip are generated, and the drawing device can draw the electron rays at high speed and with high accuracy even for an oblique figure.
JP10501580A 1980-08-01 1980-08-01 Drawing device by electron beam Pending JPS5731133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10501580A JPS5731133A (en) 1980-08-01 1980-08-01 Drawing device by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10501580A JPS5731133A (en) 1980-08-01 1980-08-01 Drawing device by electron beam

Publications (1)

Publication Number Publication Date
JPS5731133A true JPS5731133A (en) 1982-02-19

Family

ID=14396232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10501580A Pending JPS5731133A (en) 1980-08-01 1980-08-01 Drawing device by electron beam

Country Status (1)

Country Link
JP (1) JPS5731133A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412675A (en) * 1977-06-30 1979-01-30 Jeol Ltd Electon beam exposure method
JPS5435680A (en) * 1977-08-25 1979-03-15 Cho Lsi Gijutsu Kenkyu Kumiai Device for exposing electron beam
JPS5469075A (en) * 1977-11-14 1979-06-02 Hitachi Ltd Electron beam drawing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412675A (en) * 1977-06-30 1979-01-30 Jeol Ltd Electon beam exposure method
JPS5435680A (en) * 1977-08-25 1979-03-15 Cho Lsi Gijutsu Kenkyu Kumiai Device for exposing electron beam
JPS5469075A (en) * 1977-11-14 1979-06-02 Hitachi Ltd Electron beam drawing device

Similar Documents

Publication Publication Date Title
JPS5344193A (en) X-ray source device
JPS52151568A (en) Electron beam exposure apparatus
JPS52143776A (en) Electron beam exposure apparatus
JPS5731133A (en) Drawing device by electron beam
JPS52119938A (en) Unit for image multiplication change
FR1245296A (en) Device for deflecting an electron beam
JPS52130570A (en) Electron beam exposing device
JPS5322375A (en) Beam blanking device
JPS5343421A (en) Chinese character input device
JPS53120277A (en) Electron beam exposure device
JPS5326032A (en) Method of guiding movable vehicle
JPS52103966A (en) Deflection unit for charged particle ray exposure device
JPS5437685A (en) Electron beam exposure unit
JPS56104439A (en) Electron beam exposing method
JPS5317057A (en) Two beams one electron gun cathode-ray tube
JPS5644912A (en) Device for tracing pattern and obtaining position information
JPS57120338A (en) Electron beam drawing method and device therefor
JPS5227640A (en) Method for projecting image on photosensitive material of light image recording device using cathode ray tube
JPS5360162A (en) Electron beam irradiation device
JPS56157027A (en) Electron beam projector
JPS53137672A (en) Arrangement graph drawing circuit
JPS5748230A (en) Electron ray exposure
JPS522381A (en) Electronics beam deflection scanning method
JPS57113220A (en) Apparatus for electron beam exposure
JPS53108714A (en) Deflecting device of cathode-ray tube