JPS57120338A - Electron beam drawing method and device therefor - Google Patents

Electron beam drawing method and device therefor

Info

Publication number
JPS57120338A
JPS57120338A JP501281A JP501281A JPS57120338A JP S57120338 A JPS57120338 A JP S57120338A JP 501281 A JP501281 A JP 501281A JP 501281 A JP501281 A JP 501281A JP S57120338 A JPS57120338 A JP S57120338A
Authority
JP
Japan
Prior art keywords
scanning
zero
width
electron
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP501281A
Other languages
Japanese (ja)
Inventor
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP501281A priority Critical patent/JPS57120338A/en
Publication of JPS57120338A publication Critical patent/JPS57120338A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a clear picture by increasing the width of an electron beam from zero to the same speed as the beam scanning speed, scanning the beam when it becomes the prescribed width, and thereafter contracting it so that it becomes zero at the same speed from the end of the opposite end from the scanning direction. CONSTITUTION:An electron gun, means for scanning an electron beam emitted from an electron gun and a throttle for shaping the beam are provided in an electron beam deawing device, the beam is passed through the throttle while deflecting the beam in the direction reverse to the beam scanning direction at the start of the frawing, and the beam is deflected in the direction reverse to the scanning direction at the end of the drawing to shield the passage of the beam through the throttle to complete the drawing. That is, when the electron beam of wXd formed in a rectangular shape is scanned in the direction d to draw a figure of wXL the beam width is increased from zero to the start end S of the figure from the beam ON by employing the beam ON signal 15 and a shape deflecting signal 20, thereby continuing the drawing. When it reaches the end T, the beam is deenergized to be contracted to zero in width.
JP501281A 1981-01-19 1981-01-19 Electron beam drawing method and device therefor Pending JPS57120338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP501281A JPS57120338A (en) 1981-01-19 1981-01-19 Electron beam drawing method and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP501281A JPS57120338A (en) 1981-01-19 1981-01-19 Electron beam drawing method and device therefor

Publications (1)

Publication Number Publication Date
JPS57120338A true JPS57120338A (en) 1982-07-27

Family

ID=11599621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP501281A Pending JPS57120338A (en) 1981-01-19 1981-01-19 Electron beam drawing method and device therefor

Country Status (1)

Country Link
JP (1) JPS57120338A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62501388A (en) * 1985-01-14 1987-06-04 ヒユ−ズ・エアクラフト・カンパニ− Focused beam spot forming and blanking method and apparatus
JPH02123731A (en) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> Pattern drawing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62501388A (en) * 1985-01-14 1987-06-04 ヒユ−ズ・エアクラフト・カンパニ− Focused beam spot forming and blanking method and apparatus
JPH02123731A (en) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> Pattern drawing method

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